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? semiconductor components industries, llc, 2010 october, 2010 -- rev. 9 1 publication order number: mun5211t1/d mun5211t1g series bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a serie s base resistor and a base--emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc--70/sot--323 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sc--70/sot--323 package can be soldered using wave or reflow. the modified gull--winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? available in 8 mm embossed tape and reel. use the device number to order the 7 inch/3000 unit reel. ? these devices are pb--free, halogen free/bfr free and are rohs compliant maximum ratings (t a =25 ? c unless otherwise noted) rating symbol value unit collector--base voltage v cbo 50 vdc collector--emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a =25 ? c derate above 25 ? c p d 202 (note 1) 310 (note 2) 1.6 (note 1) 2.5 (note 2) mw mw/ ? c thermal resistance, junction--to--ambient r ja 618 (note 1) 403 (note 2) ? c/w thermal resistance, junction--to--lead r jl 280 (note 1) 332 (note 2) ? c/w junction and storage temperature range t j ,t stg -- 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. ex tended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr--4 @ minimum pad. 2. fr--4 @ 1.0 x 1.0 inch pad. npn silicon bias resistor transistors pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r 1 r 2 device marking information see specific marking information in the device marking table on page 2 of this data sheet. http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information sc--70/sot--323 case 419 style 3 3 2 1 marking diagram 8x = device code m = date code* g = pb--free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 8x m g g
mun5211t1g series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping ? mun5211t1g sc--70/sot--323 (pb--free) 8a 10 10 3000 / tape & reel MUN5212T1G sc--70/sot--323 (pb--free) 8b 22 22 3000 / tape & reel mun5213t1g sc--70/sot--323 (pb--free) 8c 47 47 3000 / tape & reel mun5214t1g sc--70/sot--323 (pb--free) 8d 10 47 3000 / tape & reel mun5215t1g sc--70/sot--323 (pb--free) 8e 10 ? 3000 / tape & reel mun5216t1g (note 3) sc--70/sot--323 (pb--free) 8f 4.7 ? 3000 / tape & reel mun5230t1g sc--70/sot--323 (pb--free) 8g 1.0 1.0 3000 / tape & reel mun5231t1g (note 3) sc--70/sot--323 (pb--free) 8h 2.2 2.2 3000 / tape & reel mun5232t1g sc--70/sot--323 (pb--free) 8j 4.7 4.7 3000 / tape & reel mun5233t1g sc--70/sot--323 (pb--free) 8k 4.7 47 3000 / tape & reel mun5234t1g (note 3) sc--70/sot--323 (pb--free) 8l 22 47 3000 / tape & reel mun5235t1g sc--70/sot--323 (pb--free) 8m 2.2 47 3000 / tape & reel mun5236t1g (note 3) sc--70/sot--323 (pb--free) 8n 100 100 3000 / tape & reel mun5237t1g (note 3) sc--70/sot--323 (pb--free) 8p 47 22 3000 / tape & reel ?for information on tape and reel specificat ions, including part orientation and tape si zes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 3. new devices. updated curves to follow in subsequent data sheets.
mun5211t1g series http://onsemi.com 3 electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector--base cutoff current (v cb =50v,i e =0) i cbo -- -- 100 nadc collector--emitter cutoff current (v ce =50v,i b =0) i ceo -- -- 500 nadc emitter--base cutoff current mun5211t1g (v eb =6.0v,i c = 0) MUN5212T1G mun5213t1g mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g mun5236t1g mun5237t1g i ebo -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector--base breakdown voltage (i c =10 m a, i e =0) v (br)cbo 50 -- -- vdc collector--emitter breakdown voltage (note 4) (i c =2.0ma,i b =0) v (br)ceo 50 -- -- vdc on characteristics (note 4) dc current gain mun5211t1g (v ce =10v,i c = 5.0 ma) MUN5212T1G mun5213t1g mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g mun5236t1g mun5237t1g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 -- -- -- -- -- -- -- -- -- -- -- -- -- -- collector--emitter saturation voltage (i c =10ma,i b = 0.3 ma) mun5211t1g MUN5212T1G mun5213t1g mun5214t1g mun5236t1g (i c =10ma,i b = 5 ma) mun5230t1g mun5231t1g mun5237t1g (i c =10ma,i b = 1 ma) mun5215t1g mun5216t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g v ce(sat) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc 4. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun5211t1g series http://onsemi.com 4 electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 5) (continued) output voltage (on) (v cc =5.0v,v b =2.5v,r l =1.0k ) mun5211t1g MUN5212T1G mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g (v cc =5.0v,v b =3.5v,r l =1.0k ) mun5213t1g (v cc =5.0v,v b =5.5v,r l =1.0k ) mun5236t1g (v cc =5.0v,v b =4.0v,r l =1.0k ) mun5237t1g v ol -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc =5.0v,v b =0.5v,r l =1.0k ) mun5211t1g MUN5212T1G mun5213t1g mun5214t1g mun5234t1g mun5235t1g (v cc =5.0v,v b =0.05v,r l =1.0k ) mun5230t1g (v cc =5.0v,v b =0.25v,r l =1.0k ) mun5215t1g mun5216t1g mun5231t1g mun5232t1g mun5233t1g mun5236t1g mun5237t1g v oh 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- vdc input resistor mun5211t1g MUN5212T1G mun5213t1g mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g mun5236t1g mun5237t1g r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio mun5211t1g MUN5212T1G mun5213t1g mun5214t1g mun5215t1g mun5216t1g mun5230t1g mun5231t1g mun5232t1g mun5233t1g mun5234t1g mun5235t1g mun5236t1g mun5237t1g r 1 /r 2 0.8 0.8 0.8 0.17 -- -- 0.8 0.8 0.8 0.055 0.38 0.038 0.8 1.7 1.0 1.0 1.0 0.21 -- -- 1.0 1.0 1.0 0.1 0.47 0.047 1.0 2.1 1.2 1.2 1.2 0.25 -- -- 1.2 1.2 1.2 0.185 0.56 0.056 1.2 2.6 5. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun5211t1g series http://onsemi.com 5 figure 1. derating curve 350 200 150 100 50 0 -- 50 0 50 100 150 t a , ambient temperature ( ? c) r ja = 403 ? c/w 250 p d , power dissipation (mw) 300
mun5211t1g series http://onsemi.com 6 typical electrical characteristics -- mun5211t1g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =--25 ? c 75 ? c 25 ? c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 ? c 25 ? c -- 2 5 ? c t a =--25 ? c 25 ? c figure 5. output current versus input voltage 75 ? c 25 ? c t a =--25 ? c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 ? c v ce =10v f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10
mun5211t1g series http://onsemi.com 7 typical electrical characteristics -- MUN5212T1G v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 ? c 25 ? c -- 2 5 ? c 100 10 1 100 75 ? c 25 ? c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =--25 ? c 0 i c , collector current (ma) 100 t a =--25 ? c 75 ? c 10 1 0.1 10 20 30 40 50 25 ? c figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts) t a =--25 ? c 75 ? c 25 ? c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b =10 v ce =10v f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v
mun5211t1g series http://onsemi.com 8 typical electrical characteristics -- mun5213t1g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =--25 ? c 75 ? c 25 ? c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 ? c 25 ? c -- 2 5 ? c 100 10 1 100 25 ? c 75 ? c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 16. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 ? c 75 ? c v ce(sat) , maximum collector voltage (volts) v ce =10v f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 t a =--25 ? c t a =--25 ? c
mun5211t1g series http://onsemi.com 9 typical electrical characteristics -- mun5214t1g 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -- 2 5 ? c 25 ? c t a =75 ? c v ce =10 300 250 200 150 100 50 0 2468 1520405060708090 f=1mhz l e =0v t a =25 ? c 25 ? c i c /i b =10 t a =--25 ? c t a =75 ? c 25 ? c -- 2 5 ? c v o =0.2v t a =--25 ? c 75 ? c v o =5v 25 ? c 75 ? c
mun5211t1g series http://onsemi.com 10 typical electrical characteristics ? mun5215t1g 75 ? c 25 ? c -- 2 5 ? c figure 22. v ce(sat) versus i c figure 23. dc current gain figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 v ce =10v
mun5211t1g series http://onsemi.com 11 typical electrical characteristics ? mun5230t1g 75 ? c 25 ? c -- 2 5 ? c figure 27. v ce(sat) versus i c figure 28. dc current gain figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 v ce =10v
mun5211t1g series http://onsemi.com 12 typical electrical characteristics ? mun5232t1g 75 ? c 25 ? c -- 2 5 ? c figure 32. v ce(sat) versus i c figure 33. dc current gain figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 36. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 0.01 35 25 15 5 0.01 0.1 30 3 100 5 6 f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 v ce =10v
mun5211t1g series http://onsemi.com 13 typical electrical characteristics ? mun5233t1g 75 ? c 25 ? c -- 2 5 ? c figure 37. v ce(sat) versus i c figure 38. dc current gain figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 41. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 0.01 35 25 15 5 0.01 0.1 20 3.5 3 2.5 100 5 f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 v ce =10v
mun5211t1g series http://onsemi.com 14 typical electrical characteristics ? mun5235t1g 75 ? c 25 ? c -- 2 5 ? c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 75 ? c 25 ? c t a =--25 ? c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f=1mhz i e =0v t a =25 ? c v o =5v v o =0.2v i c /i b =10 v ce =10v
mun5211t1g series http://onsemi.com 15 typical applications for npn brts load +12 v figure 47. level shifter: connect s 12 or 24 volt circuits to logic in out v cc isolated load from m por other logic +12 v figure 48. open collector inverter: inverts the input signal figure 49. inexpensive, unregulated current source
mun5211t1g series http://onsemi.com 16 package dimensions sc--70 (sot--323) case 419--04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 ? mm inches ? scale 10:1 *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s techni cal experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or fo r any other application in which the failure of the scillc product could create a situation wher e personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unaut horized application, buyer shall indemnify and hold scillc and its offic ers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or in directly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such clai m alleges that scillc was negligent regarding the design or manufactur e of the part. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable c opyright laws and is not for resale in any manner. mun5211t1/d publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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