document number: 89400 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount ultrafast plastic rectifier u1b, u1c, u1d vishay general semiconductor new product features ? oxide planar chip junction ? ultrafast recovery time ? low forward voltag e, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc/dc converters or polarity protection application. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 100 v, 150 v, 200 v i fsm 30 a t rr 15 ns v f at i f = 1.0 a 0.76 v t j max. 150 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol u1b u1c u1d unit device marking code u1b u1c u1d maximum repetitive pe ak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89400 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 u1b, u1c, u1d vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) free air, mounted on recommended copper pad area ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 0.6 a t a = 25 c v f (1) 0.82 0.87 v i f = 1.0 a 0.87 0.92 i f = 0.6 a t a = 100 c 0.71 0.78 i f = 1.0 a 0.76 0.84 reverse current rated v r t a = 25 c i r (2) -5.0 a t a = 100 c 55 100 reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t a = 25 c t rr -15 ns i f = 0.6 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t a = 25 c 24 - t a = 100 c 29 - storage charge i f = 0.6 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t a = 25 c q rr 7- nc t a = 100 c 13 - typical junction capacitance 4.0 v, 1 mhz c j 6.8 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol u1b u1c u1d unit typical thermal resistance r ? ja (1) 115 c/w r ? jm (1) 22 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode u1d-m3/61t 0.064 61t 1800 7" diameter plastic tape and reel u1d-m3/5at 0.064 5at 7500 13" diam eter plastic tape and reel 80 1.2 t m - mount temperature (c) 0 0.4 90 120 150 0.8 0.6 0.2 100 110 140 1.0 130 average forward current (a) 0 average forward current (a) average power lo ss (w) 0 0.4 0.2 0.8 1.2 0.8 0.6 0.2 0.4 0.6 1.0 1.0 d = t p /t t p t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0
document number: 89400 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 u1b, u1c, u1d vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.1 10 in s tantaneou s forward voltage (v) 0.01 0.1 0.3 0.9 1.3 1 0.5 0.7 1.1 t a = 150 c t a = 125 c t a = 25 c t a = 100 c in s tantaneou s forward current (a) 10 10 1000 percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 1 0.1 0.01 100 20 30 40 50 60 70 80 90 100 t a = 150 c t a = 125 c t a = 25 c t a = 100 c 0.1 10 rever s e voltage (v) junction capactiance (pf) 1 1 10 100 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.001 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) 1 0.01 0.1 1 10 100 junction to ambient 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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