source-drain voltage v dss tj=25c to 175c rgs=1m ? v dss 100 v dc collector current i d25 tc=25c tc=25c,tvj=175c i c , nom ic 400 400 a repetitive peak drain current tp=1msec,tc=80c i crm 600 a total power dissipation tc=25c p tot 1700 w gate-emitter peak voltage continuous transient v gs +/-20 =/-30 v v repetitive peak forward current tp=1msec i frm 600 a isolation voltage rms, 50hz, t=1min v isol 2500 v attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -aln isolation -mosfet module maximum rated values/electrical properties SML400HB01MF drain-source breakdown voltage i d =250a,v gs =0v, tc=25c bv dss 100 v gate threshold voltage i d =8ma,v ds =v gs , tvj=25c vge (th) 3.0 5 v f=1mhz,tvj=25c,vgs=0v,v ds =0v 15200 5800 1720 pf pf pf 470 100 270 nc nc nc gate-source leakage current v gs =+/-20v, v gs =0v,tvj=25c i gss 1 +/-200 na drain source leakage current v ds =v gs =20v, tvj=25c tvj=150c tvj=175c i dss 25 1 5 a ma ma tvj=25c,v ds =0.5v dss ,id=0.5i d25, v gs =10v min typ max
gfs vgs=10v, i d =0.5i d25 60 97 s ic=120a,v ds =0.5vdss,v gs =10 v rge=3.3 ? ,l=30nh tvj=25c 50 60 150 90 ns ns ns ns stray module inductance l ce 30 nh terminal-chip resistance r c 1.0 m ? dc forward diode current is t c =25c v gs =0v i s 400 a peak reverse recovery current if=50a, -di/dt=100a/sec v r =50v,vgs=0v,tvj=25c a recovered charge if=50a, -di/dt=100a/sec vr=50v,vgs=0v,tvj=25c qrm c 12 0.8 repetitive forward current ism 800 a reverse recovery time if=50a, -di/dt=100a/sec vr=50v,vgs=0v,tvj=25c trr 300 ns i f =i s , v gs =0v t p =300sec, duty cycle=2% v sd 1.5 v i rm source ?drain diode characteristics typ max
thermal resistance junction to case igbt diode r j-c 0.09 0.11 k/w thermal resistance case to heatsink r c-hs 0.03 k/w maximum junction temperature tvj 175 c maximum operating temperature top -55 175 c storage temperature tstg -55 175 c thermal properties min typ max 400 300 200 100 0
400 200 0 300 150
160a 600
700a
20 200nf
circuit diagram
|
