SSM6L09FU 2007-11-01 1 toshiba field effect transisto r silicon n/p channel mos type SSM6L09FU power management switch high speed switching applications ? small package ? low on resistance q1: r on = 0.7 ? (max) (@v gs = 10 v) q2: r on = 2.7 ? (max) (@v gs = ? 10 v) q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 400 drain current pulse i dp 800 ma q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?30 v gate-source voltage v gss 20 v dc i d ?200 drain current pulse i dp ?400 ma absolute maximum ratings (q1, q2 common) (ta = 25c) characteristics symbol rating unit drain power dissipation (ta = 25c) p d (note 1) 300 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6) figure 1. unit: mm jedec D jeita D toshiba 2-2j1c weight: 6.8 mg (typ.)
SSM6L09FU 2007-11-01 2 handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrosta tic electricity. operators sh ould wear anti-static clothing, and containers and other objects that come into direct contact with devi ces should be made of anti-static materials. marking equivalent circuit figure 1: 25.4 mm 25.4 mm 1.6 t, (top view) cu pad: 0.32 mm 2 6 q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 0.1 ma 1.1 ? 1.8 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 200 ma (note2) 270 ? ? ms i d = 200 ma, v gs = 10 v (note2) ? 0.53 0.7 i d = 200 ma, v gs = 4 v (note2) ? 0.8 1.2 drain-source on resistance r ds (on) i d = 200 ma, v gs = 3.3 v (note2) ? 1.0 1.7 input capacitance c iss ? 20 ? pf reverse transfer capacitance c rss ? 7 ? pf output capacitance c oss v ds = 5 v, v gs = 0, f = 1 mhz ? 16 ? pf turn-on time t on ? 72 ? switching time turn-off time t off v dd = 5 v, i d = 200 ma, v gs = 0~4 v ? 68 ? ns note2: pulse test switching time test circuit (q1: nch mos fet) (c) v out v dd = 5 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 4 v 0 10 s 50 r l (b) v in t on 90% 10% 0 v 4 v 10% 90% t off t r t f v dd v ds ( on ) (a) test circuit k 5 6 5 4 1 2 3 0.4 mm 0.8 mm q1 q2 6 5 4 1 2 3
SSM6L09FU 2007-11-01 3 precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ?1 ma, v gs = 0 ?30 ? ? v drain cut-off current i dss v ds = ?30 v, v gs = 0 ? ? ?1 a gate threshold voltage v th v ds = ?5 v, i d = ?0.1 ma ?1.1 ? ? 1.8 v forward transfer admittance ? y fs ? v ds = ?5 v, i d = ? 100 ma (note2) 115 ? ? ms i d = ?100 ma, v gs = ? 10 v (note2) ? 2.1 2.7 i d = ?100 ma, v gs = ? 4 v (note2) ? 3.3 4.2 drain-source on resistance r ds (on) i d = ?100 ma, v gs = ? 3.3 v(note2) ? 4.0 6.0 input capacitance c iss v ds = ?5 v, v gs = 0, f = 1 mhz ? 22 ? pf reverse transfer capacitance c rss v ds = ?5 v, v gs = 0, f = 1 mhz ? 5 ? pf output capacitance c oss v ds = ?5 v, v gs = 0, f = 1 mhz ? 14 ? pf turn-on time t on ? 85 ? switching time turn-off time t off v dd = ?5 v, i d = ?100 ma, v gs = 0~ ?4 v ? 85 ? ns note2: pulse test switching time test circuit (q2: pch mos fet) precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. (c) v out v dd = ?5 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 0 ?4 v 10 s 50 r l (b) v in t on 90% 10% ?4 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (a) test circuit
SSM6L09FU 2007-11-01 4 q1 (nch mos fet) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i d ? v ds drain current i d (ma) drain current i d (ma) r ds (on) ? i d drain-source on resistance r ds (on) ( ) gate-source voltage v gs (v) i d ? v gs drain current i d (ma) gate-source voltage v gs (v) r ds (on) ? v gs ambient temperature ta (c) r ds (on) ? ta drain current i d (ma) ? y fs ? ? i d forward transfer admittance ? y fs ? (ms) 800 400 0 0 0.5 1 1.5 2 200 common source ta = 25c 10 4 v gs = 2.4 v 3.3 3.0 2.8 2.6 600 1000 2 1.8 1.2 0.8 0.4 0 0 200 400 600 800 1000 1.6 1.4 1 0.6 0.2 common source ta = 25c v gs = 3.3 v 4 v 10 v 2 1.8 1.2 0.8 0.4 0 ? 25 0 25 75 100 150 1.6 1.4 1 0.6 0.2 common source i d = 200 ma 50 125 v gs = 3.3 v 4 v 10 v 0.01 1 10 0 4 2 1 100 1000 3 0.1 common source v ds = 5 v 25c ? 25c ta = 100c 2 1.8 1.2 0.8 0.4 0 0 2 4 6 8 10 1.6 1.4 1 0.6 0.2 common source i d = 200 ma ta = 100c 25c ? 25c 10 100 30 100 1000 1000 common source v ds = 5 v ta = 25c 50 300 500 30 50 300 500 10
SSM6L09FU 2007-11-01 5 q1 (nch mos fet) ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) drain-source voltage v ds (v) i dr ? v ds drain reveres current i dr (ma) drain-source voltage v ds (v) c ? v ds capacitance c (pf) drain current i d (ma) t ? i d switching time t (ns) 800 400 0 0 ? 0.4 ? 1 ? 1.4 200 600 1000 common source v gs = 0 ta = 25c ? 0.2 ? 0.6 ? 0.8 ? 1.2 s g i dr d 1 10 0.1 1 100 10 100 500 common source v gs = 0 v f = 1 mhz ta = 25c c oss c rss c iss 10 100 1 10 1000 100 1000 5000 common source v dd = 5 v v gs = 0~4 v ta = 25c t off t f t on t r 2 1.8 1.2 0.8 0.4 0 ? 25 0 25 75 100 150 1.6 1.4 1 0.6 0.2 50 125 common source i d = 0.1 ma v ds = 5 v
SSM6L09FU 2007-11-01 6 q2 (pch mos fet) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i d ? v ds drain current i d (ma) drain current i d (ma) r ds (on) ? i d drain-source on resistance r ds (on) ( ) gate-source voltage v gs (v) i d ? v gs drain current i d (ma) gate-source voltage v gs (v) r ds (on) ? v gs ambient temperature ta (c) r ds (on) ? ta drain current i d (ma) ? y fs ? ? i d forward transfer admittance ? y fs ? (ms) ? 400 ? 200 0 0 ? 0.5 ? 1 ? 1.5 ? 2 ? 100 common source ta = 25c ? 10 ? 4 v gs = ? 2.4 v ? 3.3 ? 3.0 ? 2.8 ? 2.6 ? 300 ? 500 8 7 5 3 0 0 ? 100 ? 200 ? 300 ? 400 ? 500 6 4 2 1 common source ta = 25c ? 4 v ? 10 v v gs = ? 3.3 v 8 7 3 2 0 ? 25 0 25 75 100 150 6 5 4 1 50 125 ? 10 v common source i d = ? 100 ma ? 4 v v gs = ? 3.3 v ? 0.01 ? 1 ? 10 0 ? 4 ? 2 ? 1 ? 100 ? 1000 ? 3 ? 0.1 common source v ds = ? 5 v 25c ? 25c ta = 100c 8 7 5 3 0 0 ? 2 ? 4 ? 6 ? 8 ? 10 6 4 2 1 common source i d = ? 100 ma ta = 100c 25c ? 25c 10 100 ? 10 ? 100 1000 ? 1000 common source v ds = ? 5 v ta = 25c ? 30 ? 300 ? 50 ? 500 30 300 500 50
SSM6L09FU 2007-11-01 7 q2 (pch mos fet) q1, q2 common * : total rating ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) drain-source voltage v ds (v) i dr ? v ds drain reveres current i dr (ma) drain-source voltage v ds (v) c ? v ds capacitance c (pf) drain current i d (ma) t ? i d switching time t (ns) ambient temperature ta (c) p d * ? ta power dissipation p d * (mw) ? 400 ? 200 0 0 0.4 1 1.4 ? 100 ? 300 ? 500 common source v gs = 0 ta = 25c 0.2 0.6 0.8 1.2 s g i dr d mounted on fr4 board (25.4 mm 25.4 mm 1.6 t cu pad: 0.32 mm 2 6) figure 1 0 100 200 0 160 100 60 20 80 40 120 300 400 140 1 10 ? 0.1 ? 1 100 ? 10 ? 100 500 common source v gs = 0 v f = 1 mhz ta = 25c c oss c rss c iss 10 100 ? 1 ? 10 1000 ? 100 ? 1000 5000 common source v dd = ? 5 v v gs = 0~ ? 4 v ta = 25c t off t f t on t r ? 2 ? 1.8 ? 1.2 ? 0.8 ? 0.4 0 ? 25 0 25 75 100 150 ? 1.6 ? 1.4 ? 1 ? 0.6 ? 0.2 common source i d = ? 0.1 ma v ds = ? 5 v 50 125
SSM6L09FU 2007-11-01 8 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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