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PF08114B mos fet power amplifier module for e-gsm and dcs1800 dual band handy phone ade-208-1029b (z) rev.2 dec. 2001 application ? dual band amplifier for e-gsm (880 mhz to 915 mhz) and dcs1800 (1710 mhz to 1785 mhz) ? for 3.5 v nominal operation features ? 2 in / 2 out dual band amplifier ? simple external circuit including output matching circuit ? simple power control ? 2stage amplifier : 10 dbm input typ ? lead less thin & small package : 8 12.3 1.6 mm typ ? high efficiency : 54% typ at 34.5 dbm for e-gsm : 52% typ at 31.5 dbm for dcs1800 pin arrangement 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: g: pin gsm vapc vdd2 pout gsm gnd pout dcs vdd1 vband pin dcs gnd gnd ? rf-k1-10 1 10 4 5 2 g 3 9 6 8 7 g
PF08114B rev.2, dec. 2001, page 2 of 15 absolute maximum ratings (tc = 25 c) item symbol rating unit supply voltage vdd 7 * 1 v vapc voltage vapc 4.3 * 2 v input power pin 15 dbm operating case temperature tc (op) ? 25 to +100 c storage temperature tstg ? 30 to +100 c notes: 1. this value is specified at no operation. (vapc = 0 v) 2. this value is specified at no operation. (vdd = 0 v) at vdd > 0, vapc controlled, idd = 0 to x a, where x = current at pout = 34.5 dbm (@gsm), 31.5 dbm (@dcs), 50 ? load, vdd = 3.5 v and tcase = 25 c electrical characteristics for dc (tc = 25 c) item symbol min typ max unit test condition ?? 10 a vdd = 4.5 v, vapc = 0 v, vband = 0 v drain cutoff current ids ?? 500 a vdd = 4.5 v, vapc = 0 v, vband = 2 v vapc control current iapc ?? 3 ma vdd = 3.5 v, pin = 8 to 12 dbm, pout = 34.5 dbm @gsm900 pout = 31.5 dbm @dcs1800 vapc controlled, rg = rl = 50 ? esd product quality guide level for esd is 500 v at following test circuit. 10 m ? to 30 m ? 1500 ? 100 pf test pin (bold line indicates the discharging transmission line) common pin high-voltage power supply sample socket
PF08114B rev.2, dec. 2001, page 3 of 15 electrical characteristics for e-gsm mode (tc = 25 c) test conditions unless otherwise noted: vdd1 = vdd2 = 3.5 v, pin = 8 to 10 dbm, vband = 0 v, rg = rl = 50 ? , tc = 25 c, pulse operation with pulse width 577 s and duty cycle 1:8 shall be used. item symbol min typ max unit test condition frequency range f 880 ? 915 mhz band select (gsm active) vband 0.0 ? 0.2 v input power pin 8 10 12 dbm supply voltage vdd 2.9 3.5 4.5 v total efficiency t 45 54 ? % 2nd harmonic distortion 2nd h.d. ?? 50 ? 41.5 dbc 3rd harmonic distortion 3rd h.d. ?? 50 ? 41.5 dbc input vswr vswr (in) ? 1.5 3 ? pout gsm = 34.5dbm, vapc = controlled output power (1) pout (1) 34.5 35.0 ? dbm vapc = 2.2v output power (2) pout (2) 32.9 33.5 ? dbm vdd = 2.9v, vapc = 2.2v, tc = +90c isolation ??? 40 ? 25 dbm vapc = 0.2 v, pin = 12dbm isolation at dcs rf-output when gsm is active ??? 30 ? 20 dbm pout gsm = 34.5dbm, measured at f = 1760 to 1830mhz switching time t r , t f ? 12 s pout gsm = ? 10 to 34.5dbm, t = 90% stability ? no parasitic oscillation > ? 36 dbm ? all combinations of the following parameters: vapc controlled * 1 , pin = min to max, vdd = 2.9 to 4.5v, tcase = ? 20 to 90 c, load vswr = 7.5 : 1, all phase angles load vswr tolerance ? no degradation ? all combinations of the following parameters: vapc controlled * 1 , pin = min to max, vdd = 2.9 to 4.5v, tcase = ? 20 to 90 c, load vswr = 7.5 : 1, all phase angles note: 1. id = 0 a to x a, where x = current at pout = 34.5 dbm, 50 ? load, vdd = 3.5 v and tcase = 25 c. vapc can range from 0.2 v to 4.3 v to control idd.
PF08114B rev.2, dec. 2001, page 4 of 15 electrical characteristics for dcs1800 mode (tc = 25 c) test conditions unless otherwise noted: vdd1 = vdd2 = 3.5 v, pin = 8 to 10 dbm, vband = 2 v, rg = rl = 50 ? , tc = 25 c, pulse operation with pulse width 577 s and duty cycle 1:8 shall be used. item symbol min typ max unit test condition frequency range f 1710 ? 1785 mhz dcs1800 (1710 to 1785mhz) band select (dcs active) vctl 1.9 ? 2.9 v input power pin 8 10 12 dbm supply voltage vdd 2.9 3.5 4.5 v total efficiency t 45 52 ? % 2nd harmonic distortion 2nd h.d. ?? 50 ? 38.5 dbc 3rd harmonic distortion 3rd h.d. ?? 50 ? 38.5 dbc input vswr vswr (in) ? 1.5 3 ? pout dcs = 31.5dbm, vapc = controlled output power (1) pout (1) 31.5 32.5 ? dbm vapc = 2.2v output power (2) pout (2) 30.0 31.0 ? dbm vdd = 2.9v, vapc = 2.2v, tc = +90c isolation ??? 42 ? 36 dbm vapc = 0.2 v switching time t r , t f ? 12 s pout dcs = ? 10 to 31.5dbm, t = 90% stability ? no parasitic oscillation > ? 36 dbm ? all combinations of the following parameters: vapc controlled * 1 , pin = min to max, vdd = 2.9 to 4.5v, tcase = ? 20 to 90 c, load vswr = 7.5 : 1, all phase angles intermodulation ??? 59 ? 52 dbc pout = 31.5dbm, pinterferer at output, fo + 3mhz at ? 11.5dbm, measure fo ? 3mhz, rbw = 300khz load vswr tolerance ? no degradation ? all combinations of the following parameters: vapc controlled * 1 , pin = min to max, vdd = 2.9 to 4.5v, tcase = ? 20 to 90 c, load vswr = 7.5 : 1, all phase angles note: 1. id = 0 a to x a, where x = current at pout = 31.5 dbm, 50 ? load, vdd = 3.5 v and tcase = 25 c. vapc can range from 0.2 v to 4.3 v to control idd.
PF08114B rev.2, dec. 2001, page 5 of 15 internal diagram and external circuit c1 = c2 = 10 f tantalum electrolyte c3 = c4 = 1000 pf ceramic chip c5 = c6 = c7 = 10000 pf ceramic chip fb = ferrite bead blo1rn1-a62-001 (manufacture: murata) or equivalent z1 = z2 = z3 = z4 = 50 ? microstrip line fb c3 pin 2 vapc vapc z3 pout gsm pout dcs z4 fb c4 pin 8 vband vband fb c5 c1 pin 7 vdd1 vdd1 c2 fb c6 pin 3 vdd2 pin 6 pout dcs vdd2 bias circuit pin 4 pout gsm pin 9 pin dcs pin 1 pin gsm pin dcs pin gsm z2 z1
PF08114B rev.2, dec. 2001, page 6 of 15 test fixture pattern unit: mm scale: 1/1 grass epoxy double sided p.c.b (t = 1.6 mm, r = 4.8) 1 1 3 40 3 3 1.5 3 1.5 3 4 1 11 1 42 4.8 top view 16 6 6 0.6 1.6 2.5 4 2.5 9.55 1.4 12.7 7.55 0.2 0.6 0.6 0.525 0.6 0.6 1.6 1.6 1.4 0.525 1.35 2 2 3.85 1.35 6.775 6.775 15.525 15.525 15.525 0.925 1.575 1.575 1.350 1.575 1.575 1.350 1.575 1.575 1.350 40 42 bottom view 1.575 1.575 1.350 16.875 8.125 0.525 0.5 0.6 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 6.775 6.775 1.4 3.6 1.4 1.4 2.1 1.4 1.4 1.35 1.35 1.4 1.4 1.4 1.4 1.4 1.7 1.2 1.0 1.7 1.7 3.95 2.5 0.5 16.875 15.525 2.0 2.5 11.4 15.9 4.8 1.35 0.5 0.525
PF08114B rev.2, dec. 2001, page 7 of 15 characteristic curves ? 80 ? 60 ? 40 ? 20 0 20 40 0 10 20 30 40 50 60 0 0.2 gsm mode (880 mhz) pout, eff vs. vapc vapc (v) pout (dbm) efficiency (%) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 vdd = 3.5 v, vband = 0 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? pout efficiency ? 80 ? 60 ? 40 ? 20 0 20 40 0 10 20 30 40 50 60 0 0.2 gsm mode (915 mhz) pout, eff vs. vapc vapc (v) pout (dbm) efficiency (%) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 vdd = 3.5 v, vband = 0 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? pout efficiency
PF08114B rev.2, dec. 2001, page 8 of 15 ? 80 ? 60 ? 40 ? 20 0 20 40 0 10 20 30 40 50 60 0 0.2 dcs mode (1710 mhz) pout, eff vs. vapc vapc (v) pout (dbm) efficiency (%) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 vdd = 3.5 v, vband = 2 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? pout efficiency ? 80 ? 60 ? 40 ? 20 0 20 40 0 10 20 30 40 50 60 0 0.2 dcs mode (1785 mhz) pout, eff vs. vapc vapc (v) pout (dbm) efficiency (%) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 vdd = 3.5 v, vband = 2 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? pout efficiency
PF08114B rev.2, dec. 2001, page 9 of 15 32 33 34 35 36 37 gsm mode (880 mhz) pout vs. pin 0 pin (dbm) 2 4 6 8 10 12 14 pout (dbm) vapc = 2.2 v, vband = 0 v, rg = rl = 50 ? 3.5 v, 90 c 2.9 v, 90 c pout(2) 3.5 v, 25 c pout(1) 2.9 v, 25 c 32 33 34 35 36 37 gsm mode (915 mhz) pout vs. pin 0 pin (dbm) 2 4 6 8 10 12 14 pout (dbm) vapc = 2.2 v, vband = 0 v, rg = rl = 50 ? 3.5 v, 90 c 2.9 v, 90 c pout(2) 3.5 v, 25 c pout(1) 2.9 v, 25 c
PF08114B rev.2, dec. 2001, page 10 of 15 29 30 31 32 33 34 dcs mode (1710 mhz) pout vs. pin 0 pin (dbm) 2 4 6 8 10 12 14 pout (dbm) vapc = 2.2 v, vband = 2 v, rg = rl = 50 ? 3.5 v, 90 c 2.9 v, 90 c pout(2) 3.5 v, 25 c pout(1) 2.9 v, 25 c 29 30 31 32 33 34 dcs mode (1785 mhz) pout vs. pin 0 pin (dbm) 2 4 6 8 10 12 14 pout (dbm) vapc = 2.2 v, vband = 2 v, rg = rl = 50 ? 3.5 v, 90 c 2.9 v, 90 c pout(2) 3.5 v, 25 c pout(1) 2.9 v, 25 c
PF08114B rev.2, dec. 2001, page 11 of 15 34 35 36 37 38 39 40 3.0 gsm mode pout(1) vs. vdd vdd (v) pout(1) (dbm) 3.5 4.0 4.5 5.0 5.5 vapc = 2.2 v, vband = 0 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? f = 880 mhz f = 915 mhz 31 32 33 34 35 36 37 3.0 dcs mode pout(1) vs. vdd vdd (v) pout(1) (dbm) 3.5 4.0 4.5 5.0 5.5 vapc = 2.2 v, vband = 0 v, pin = 10 dbm, tc = 25 c, rg = rl = 50 ? f = 1710 mhz f = 1785 mhz
PF08114B rev.2, dec. 2001, page 12 of 15 20 gsm mode efficiency vs. pout pout (dbm) efficiency (%) 25 30 35 40 vdd = 3.5 v, vband = 0 v, pin = 10 dbm, vapc = control, tc = 25 c, rg = rl = 50 ? f = 880 mhz f = 915 mhz 0 10 20 30 40 50 60 70 20 dcs mode efficiency vs. pout pout (dbm) efficiency (%) 25 30 35 40 vdd = 3.5 v, vband = 0 v, pin = 10 dbm, vapc = control, tc = 25 c, rg = rl = 50 ? f = 1710 mhz f = 1785 mhz 0 10 20 30 40 50 60 70
PF08114B rev.2, dec. 2001, page 13 of 15 800 gsm mode pout(1) vs. frequency frequency (mhz) pout (dbm) 850 900 950 1000 vdd = 3.5 v, vapc = 2.2 v, vband = 0 v, tc = 25 c, rg = rl = 50 ? 33 34 35 36 37 pout (dbm) 31 32 33 34 35 1650 dcs mode pout(1) vs. frequency frequency (mhz) 1700 1750 1800 1850 vdd = 3.5 v, vapc = 2.2 v, vband = 0 v, tc = 25 c, rg = rl = 50 ? gsm dcs
PF08114B rev.2, dec. 2001, page 14 of 15 package dimensions unit: mm hitachi code jedec jeita mass (reference value) rf-k1-10 ? ? ? 8.0 0.3 8.0 0.3 8.0 0.3 7.8 1g 24 5 10 3 9g 86 7 (upper side) 1 10 4 5 2 g 3 9 6 8 7 g remark: coplanarity of bottom side of terminals are less than 0 0.1mm. 1.6 + 0.1 ? 0.2 (1.4) (1.4) (2.6) (2.6) (3.0) (3.0) (1.4) (1.4) (2.4) (2.4) (2.4) (1.0) (1.0) (1.4) (1.4) (1.4) (1.4) (2.5) (3.4) (2.9) (2.9) (4.8) (5.15) 12.3 0.3 12.3 0.3 (5.15) (4.8) (bottom side) (1.4) (1.2) (0.7) 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: g: pin gsm vapc vdd2 pout gsm gnd pout dcs vdd1 vband pin dcs gnd gnd
PF08114B rev.2, dec. 2001, page 15 of 15 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0

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