? semiconductor components industries, llc, 2004 august, 2004 ? rev. 3 1 publication order number: NTD32N06/d NTD32N06 power mosfet 32 amps, 60 volts, n?channel dpak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? pb?free packages are available ? smaller package than mtb36n06v ? lower r ds(on) ? lower v ds(on) ? lower total gate charge ? lower and tighter v sd ? lower diode reverse recovery time ? lower reverse recovery stored charge typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 60 vdc drain?to?gate voltage (r gs = 10 m ) v dgr 60 vdc gate?to?source voltage, continuous ? non?repetitive (t p 10 ms) v gs v gs 20 30 vdc drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? single pulse (t p 10 s) i d i d i dm 32 22 90 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1) total power dissipation @ t a = 25 c (note 2) p d 93.75 0.625 2.88 1.5 w w/ c w w operating and storage temperature range t j , t stg ?55 to +175 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (note 3) (v dd = 50 vdc, v gs = 10 vdc, l = 1.0 mh, i l(pk) = 25 a, v ds = 60 vdc, r g = 25 ) e as 313 mj thermal resistance ? junction?to?case ? junction?to?ambient (note 1) ? junction?to?ambient (note 2) r jc r ja r ja 1.6 52 100 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). 3. repetitive rating; pulse width limited by maximum junction temperature. n?channel d s g 60 v 26 m r ds(on) typ 32 a i d max v (br)dss 1 gate 3 source 2 drain 4 drain dpak case 369c style 2 32n06 = device code a = assembly location y = year ww = work week 1 2 3 4 dpak?3 case 369d style 2 1 2 3 4 marking diagrams ayww 32n06 1 gate 3 source 2 drain 4 drain ayww 32n06 see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information http://onsemi.com
NTD32N06 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 4) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? 70 41.6 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 4) gate threshold voltage (note 4) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 2.0 ? 2.8 7.0 4.0 ? vdc mv/ c static drain?to?source on?resistance (note 4) (v gs = 10 vdc, i d = 16 adc) r ds(on) ? 21 26 m static drain?to?source on?voltage (note 4) (v gs = 10 vdc, i d = 20 adc) (v gs = 10 vdc, i d = 32 adc) (v gs = 10 vdc, i d = 16 adc, t j = 150 c) v ds(on) ? ? ? 0.417 0.680 0.633 0.62 ? ? vdc forward transconductance (note 4) (v ds = 6 vdc, i d = 16 adc) g fs ? 21.1 ? mhos dynamic characteristics input capacitance (v 25 vd v 0vd c iss ? 1231 1725 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss ? 346 485 transfer capacitance f = 1 . 0 mhz) c rss ? 77 160 switching characteristics (note 5) turn?on delay time t d(on) ? 10 25 ns rise time (v dd = 30 vdc, i d = 32 adc, v gs =10vdc t r ? 84 180 turn?off delay time v gs = 10 vdc, r g = 9.1 ) (note 4) t d(off) ? 31 70 fall time r g 9.1 ) (note 4) t f ? 93 200 gate charge (v 48 vd i 32 ad q t ? 33 60 nc (v ds = 48 vdc, i d = 32 adc, v gs = 10 vdc ) ( note 4 ) q 1 ? 6.0 ? v gs = 10 vdc) (note 4) q 2 ? 15 ? source?drain diode characteristics forward on?voltage (i s = 20 adc, v gs = 0 vdc) (note 4) (i s = 32 adc, v gs = 0 vdc) (note 4) (i s = 20 adc, v gs = 0 vdc, t j = 150 c) v sd ? ? ? 0.89 0.96 0.75 1.0 ? ? vdc reverse recovery time (i 32 ad v 0vd t rr ? 52 ? ns (i s = 32 adc, v gs = 0 vdc, di s /dt = 100 a/ s ) ( note 4 ) t a - 37 - di s /dt = 100 a/ s) (note 4) t b ? 14.3 ? reverse recovery stored charge q rr ? 0.095 ? c 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
NTD32N06 http://onsemi.com 3 1.8 1.6 1.2 1.4 1 0.8 0.6 100 10 1000 10000 40 20 50 10 30 0 60 0.021 0 50 4 20 2 1 v ds , drain?to?source voltage (volts) i d , drain current (amps) 0 v gs , gate?to?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.038 0.034 0.03 40 30 20 0.026 0.022 0.018 0.014 0.01 10 50 60 figure 3. on?resistance vs. gate?to?source voltage i d , drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 60 ?50 50 25 0 ?25 75 125 100 3 4.6 5 4.2 3.8 5.4 3.4 7 03040 20 50 10 60 0.019 0.022 0.02 0.018 0.023 0.024 04050 30 20 60 10 v gs = 10 v 3 10 30 40 v gs = 8 v v gs = 7 v v gs = 6.5 v v gs = 6 v v gs = 5.5 v v gs = 5 v v gs = 4.5 v v gs = 4 v v ds > = 10 v t j = 25 c t j = ?55 c t j = 100 c 5.8 6.2 6.6 t j = 25 c t j = ?55 c t j = 100 c v gs = 10 v v gs = 15 v v gs = 10 v 150 175 v gs = 0 v t j = 150 c t j = 100 c t j = 125 c i d = 16 a v gs = 10 v
NTD32N06 http://onsemi.com 4 v gs 1000 100 10 1 0.1 1000 100 10 12 10 8 6 4 2 0 350 300 250 200 150 100 50 0 32 28 24 20 16 12 0 10 3200 2800 10 2400 2000 15 5 020 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 1600 1200 800 400 0 5 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v gs , gate?to?source voltage (volts) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (volts) i s , source current (amps) t, time (ns) q 1 figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (volts) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain?to?source avalanche energy (mj) 25 0 16 20 12 824 436 1 10 100 0.6 0.76 0.88 0.72 0.68 0.92 0.64 0.96 0.1 10 100 1 25 125 150 100 75 175 50 28 32 i d = 32 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 8 4 0.8 0.84 q t q 2 c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 32 a v gs = 10 v v gs = 0 v t j = 25 c i d = 32 a 10 ms 1 ms 100 s dc t r t d(off) t d(on) t f v ds mounted on 3 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating,10 s max r ds(on) limit thermal limit package limit
NTD32N06 http://onsemi.com 5 10 0.1 0.01 0.00001 0.0001 r(t) , effective transient thermal response (normalized) t, time (s) figure 13. thermal response 1 0.001 0.01 0.1 1 10 100 1000 10 0.1 0.01 0.00001 0.0001 r(t) , effective transient thermal resistance (normalized) t, time (s) 1 0.001 0.01 0.1 1 10 figure 14. thermal response normalized to r jc at steady state normalized to r ja at steady state, 1 square cu pad, cu area 1.127 in 2 , 3 x 3 inch fr4 board
NTD32N06 http://onsemi.com 6 ordering information device package shipping 2 NTD32N06 dpak 75 units/rail NTD32N06g dpak (pb?free) 75 units/rail NTD32N06?1 dpak?3 75 units/rail NTD32N06?1g dpak?3 (pb?free) 75 units/rail NTD32N06t4 dpak 2500 tape & reel NTD32N06t4g dpak (pb?free) 2500 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTD32N06 http://onsemi.com 7 package dimensions dpak case 369c?01 issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
NTD32N06 http://onsemi.com 8 package dimensions dpak?3 case 369d?01 issue b style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTD32N06/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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