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0 0.5 1 1.5 2 2.5 3 0.01 0.1 1 10 M1FL40 tc=150c [max] tc=150c [typ] tc= 25c [max] tc= 25c [typ] 0.02 0.05 0.2 0.5 2 5 forward voltage pulse measurement per diode forward voltage v f [v] i f [a] forward current
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M1FL40 forward power dissipation i o [a] average rectified forward current p f [w] forward power dissipation 0 t p i o t d=t p /t tj = 150c
0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M1FL40 v r = v rm tc [c] case temperature i o [a] average rectified forward current derating curve 0 t p i o t d=t p /t 0 v r
0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 M1FL40 v r = v rm derating curve i o [a] average rectified forward current ta [c] ambient temperature 0 t p i o t d=t p /t 0 v r glass-epoxy substrate conductor layer 35um
0 5 10 15 20 25 30 35 40 1 10 100 2 5 20 50 M1FL40 i fsm 10ms 10ms 1 cycle peak surge forward capability peak surge forward current i fsm [a] number of cycles [cycle] non-repetitive, sine wave, tj=25c before surge current is applied
1 10 110100 f=1mhz tc=25c typ M1FL40 2 5 20 50 25 20 50 200 400 reverse voltage junction capacitance junction capacitance cj [pf] v r [v]

0 20 40 60 80 100 120 140 160 1 10 100 1000 M1FL40 [ c/w] ja - conductor pattern area glass-epoxy substrate conductor layer 35um ja [mm 2 ] conductor pattern area

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