IRFJ240 document number 5265 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. mechanical data dimensions in mm (inches) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2 to-66 metal package (to213aa) n?channel power mosfet for hi?rel applications features ? hermetically sealed to-66 metal package ? simple drive requirements ? screening options available pin 1 = gate pin 2 = source case = drain v dss 200v i d(cont) 13a r ds(on) 0.18 v gs gate ? source voltage i d continuous drain current @ t case = 25c i d continuous drain current @ t case = 100c i dm pulsed drain current p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range r jc thermal resistance junction to case r ja thermal resistance junction to ambient 20v 13a 8a 50a 70w 0.56w/c ?55 to 150c 1.8c/w max. 50c/w max. absolute maximum ratings (t case = 25c unless otherwise stated) underside view
IRFJ240 document number 5265 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. parameter test conditions min. typ. max. unit v gs = 0 i d = 250 a reference to 25c i d = 1ma v gs = 10v i d = 7a* v ds = v gs i d = 250 a v ds i d x r ds(on) i d = 7a* v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 16a v ds = 0.8bv dss v dd = 75v i d = 7a z 0 = 4.7 i s = 13a t j = 25c v gs = 0 i f = 13a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance gate threshold voltage forward transconductance zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current diode forward voltage reverse recovery time reverse recovery charge 200 1.42 0.14 0.18 24 69 250 1000 100 -100 1275 500 160 43 60 16 27 16 30 27 60 40 80 31 60 13 50 2 650 4.1 5.0 12.5 v v/c v s ( a na pf nc ns a v ns c nh bv dss bv dss t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr l d l s static electrical ratings dynamic characteristics source ? drain diode characteristics internal drain inductance (from 6mm down drain lead pad to centre of die) internal source inductance (from 6mm down source lead to centre of source bond pad) package characteristics ( ) * pulse width 300 s; duty cycle 2%
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