? 2006 ixys all rights reserved v ces = 900 v i c25 = 75 a v ce(sat) = 2.7 v t fi typ = 200 ns symbol test conditions maximum ratings v ces t j = 25 c to 150 c 900 v v cgr t j = 25 c to 150 c; r ge = 1 m 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (to-247, to-264) 1.13/10nm/lb.in. f c mounting force (plus247) 20..120 / 4.5..25 n/lb weight to-247 6 g to-264 10 g plus247 6 g ds99393(01/06) g = gate c = collector e = emitter tab = collector features high frequency igbt high current handling capability mos gate turn-on - drive simplicity applications pfc circuits uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages high power density very fast switching speeds for high frequency applications hiperfast tm igbt with fast diode ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1 c (tab) g c e to-247 (ixgh) b2-class high speed igbt with fast diode s g d c (tab) c (tab) g c e plus247 (ixgx) to-264 (ixgk) preliminary data sheet symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v, note 1 2.2 2.7 v t j = 125 cv
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i c110 ; v ce = 10 v, note 1 25 40 s c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 205 pf c res 75 pf q g 135 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 23 nc q gc 50 nc t d(on) 20 ns t ri 28 ns t d(off) 350 500 ns t fi 200 ns e off 4.7 7.5 mj t d(on) 20 ns t ri 28 ns e on 1.5 mj t d(off) 400 ns t fi 420 ns e off 8.7 mj r thjc 0.31 k/w r thch 0.21 k/w inductive load i c = i c110 , v ge = 15 v v ce = 720 v, r g = r off = 5 inductive load, t j = 125 c i c = i c110 , v ge = 15 v v ce = 720 v, r g = r off = 5 diode symbol conditions maximum ratings i f25 t c = 115c 30 a symbol conditions characteristic values (t j = 25 c unless otherwise specified ) min. typ. max. v f i f = 30 a; note 1 2.5 2.75 v t vj = 150c 1.8 v i rm i f = 10 a; di f /dt = -100 a/ s; t vj = 100c 5.5 11.5 a t rr v r = 100 v; v ge = 0 v 200 ns r thjc 0.9 k/w r thch with heat transfer paste 0.25 k/w note 1: pulse test, t 300 s, duty cycle 2 %
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 50 100 150 200 250 300 03691215 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13 v 5v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v c e - volts i c - amperes v ge =15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce( sat ) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 50a i c = 25a v ge = 15v i c = 100a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 5 6 7 8 9 10 11 12 13 14 15 v g e - volts v c e - volts t j = 25 o c i c = 100a 50a 25a fig. 6. input adm ittance 0 25 50 75 100 125 150 175 200 225 250 3456789101112 v g e - volts i c - amperes t j = -40 o c 25 o c 125 o c ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 25 50 75 100 125 150 175 200 225 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0 5 10 15 20 25 30 35 40 0 30 6090120150 r g - ohms e o f f - millijoules i c = 25a t j = 125 o c v ge = 15v v ce = 720v i c = 50a i c = 100a fig. 9. dependence of turn-off energy loss on i c 0 2 4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80 90 100 i c - amperes e o f f - millijoules r g = 5 v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 100a r g = 5 v ge = 15v v ce = 720v i c = 50a i c = 25a fig. 11. dependence of turn-off switching time on r g 200 300 400 500 600 700 800 900 1000 1100 1200 1300 5 101520253035404550 r g - ohms switching time - nanoseconds t d( off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 720v i c = 100a 50a 25a i c = 25a 50a 100a fig. 12. dependence of turn-off sw itching tim e on i c 150 200 250 300 350 400 450 500 550 600 20 30 40 50 60 70 80 90 100 i c - amperes switching time - nanoseconds t d( off) t fi - - - - - r g = 5 , v ge = 15v v ce = 720v t j = 125 o c t j = 25 o c
? 2006 ixys all rights reserved fig. 14. gate charge 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 0 20 40 60 80 100 120 140 q g - nanocoulombs v g e - volts v ce = 450v i c = 50a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off switching time on temperature 150 200 250 300 350 400 450 500 550 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds t d(off) t fi - - - - - - r g = 5 ? v ge = 15 v v ce = 720v i c = 100a 50a 25a i c = 25a 50a 100a fig. 16. re ve r s e - bias saf e operating area 0 10 20 30 40 50 60 70 80 90 100 110 100 200 300 400 500 600 700 800 900 v c e - volts i c - amperes t j = 125 o c r g = 10 dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0.01 0.1 1 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 50n90b2d1 ixgk 50n90b2d1 ixgx 50n90b2d1 200 600 1000 0 400 800 120 140 160 180 200 220 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 40 80 120 0.0 0.4 0.8 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 10 20 30 40 50 60 100 1000 0 1 2 3 4 5 01234 0 10 20 30 40 50 60 70 i rm q r i f a v f -di f /dt -di f /dt a/ s a v c a/ s a/ s t rr ns t fr z thjc a/ s s 2 fig. 20. peak reverse current i rm versus -di f /dt fig. 19. reverse recovery charge q r versus -di f /dt fig. 18. forward current i f versus v f q r i rm fig. 21. dynamic parameters q r , i rm versus t vj fig. 22. recovery time t rr versus -di f /dt fig. 23. peak forward voltage v fr and t fr versus di f /dt t fr v fr fig. 24 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.465 0.0052 2 0.179 0.0003 3 0.256 0.0397 t vj = 100c v r = 600v i f = 60a i f = 30a i f =15a t vj = 100c i f = 30a i f = 60a i f = 30a i f =15a t vj = 100c v r = 600v t vj = 100c v r = 600v i f = 60a i f = 30a i f = 15a t vj = 25c t vj =100c t vj =150c
? 2006 ixys all rights reserved package outlines to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 plus 247 tm outline to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a subjective pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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