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| D1211UK semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 12/95 p d power dissipation bv dss drain C source breakdown voltage bv gss gate C source breakdown voltage i d(sat) drain current t stg storage temperature t j maximum operating junction temperature 30w 40v 20v 10a C65 to 150c 200c mechanical data 1 2 3 4 8 7 6 5 m n b c a e fg d h k l j p gold metallised multi-purpose silicon dmos rf fet 10w C 12.5v C 500mhz single ended features ? simplified amplifier design ? suitable for broad band applications ? very low c rss ? simple bias circuits ? low noise ? high gain C 10 db minimum so8 package pin 1 C source pin 2 C drain pin 3 C drain pin 4 C source pin 5 C source pin 6 C gate pin 7 C gate pin 8 C source absolute maximum ratings (t case = 25c unless otherwise stated) applications ? hf/vhf/uhf communications from 1 mhz to 1 ghz dim. a b c d e f g h j k l m n p mm tol. inches tol. 4.06 0.08 0.160 0.003 5.08 0.08 0.200 0.003 1.27 0.08 0.050 0.003 0.51 0.08 0.020 0.003 3.56 0.08 0.140 0.003 4.06 0.08 0.160 0.003 1.65 0.08 0.065 0.003 +0.25 +0.010 0.76 0.030 -0.00 -0.000 0.51 min. 0.020 min. 1.02 max. 0.040 max. 45 max. 45 max. 0 min. 0 min. 7 max. 7 max. 0.20 0.08 0.008 0.003 2.18 max. 0.086 max. 4.57 0.08 0.180 0.003 metal gate rf silicon fet tetrafet
D1211UK semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 12/95 parameter test conditions min. typ. max. unit drainCsource bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain h drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance v gs = 0 i d = 10ma v ds = 12.5v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 1a p o = 10w v ds = 12.5v i dq = 0.4a f = 500mhz v ds = 0v v gs = C5v f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ma m a v s db % pf pf pf electrical characteristics (t case = 25c unless otherwise stated) 40 1 1 0.5 7 0.8 10 50 20:1 60 40 4 r thjCcase thermal resistance junction C case max. 6c / w thermal data * pulse test: pulse duration = 300 m s , duty cycle 2% |
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