d a t a sh eet product speci?cation supersedes data of april 1995 file under discrete semiconductors, sc07 1996 jul 29 discrete semiconductors bf246a; bf246b; bf246c; bf247a; bf247b; bf247c n-channel silicon junction field-effect transistors
1996 jul 29 2 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf246a; bf246b; bf246c; bf247a; bf247b; bf247c features interchangeability of drain and source connections high i dss range frequency up to 450 mhz. applications vhf and uhf amplifiers mixers general purpose switching. description general purpose n-channel symmetrical silicon junction field-effect transistors in a plastic to-92 variant package. caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. pinning pin symbol description bf246a; bf246b; bf246c 1 d drain 2 g gate 3 s source bf247a; bf247b; bf247c 1 d drain 2 s source 3 g gate fig.1 simplified outline (to-92 variant) and symbol. handbook, halfpage 1 3 2 mam257 s d g quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage - - 25 v v gsoff gate-source cut-off voltage i d = 10 na; v ds = 15 v - 0.6 - - 14.5 v i dss drain current v ds = 15 v; v gs = 0 bf246a; bf247a 30 - 80 ma bf246b; bf247b 60 - 140 ma bf246c; bf247c 110 - 250 ma p tot total power dissipation up to t amb = 50 c - - 400 mw ? y fs ? forward transfer admittance i d = 10 ma; v ds = 15 v; f = 1 khz 8 - - ms c rs reverse transfer capacitance i d = 10 ma; v ds = 15 v; f = 1 mhz - 3.5 - pf t j operating junction temperature - - 150 c
1996 jul 29 3 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf246a; bf246b; bf246c; bf247a; bf247b; bf247c limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics static characteristics t amb = 25 c; unless otherwise specified. note 1. measured under pulse conditions: t p = 300 m s; d 0.02. dynamic characteristics t amb = 25 c; unless otherwise specified. symbol parameter conditions min. max. unit v ds drain-source voltage - 25 v i g gate current - 10 ma p tot total power dissipation up to t amb = 50 c - 400 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient in free air 250 k/w symbol parameter conditions min. typ. max. unit v (br)gss gate-source breakdown voltage i g = - 1 m a; v ds = 0 - 25 - - v v gsoff gate-source cut-off voltage i d = 10 na; v ds = 15 v - 0.6 - - 14.5 v v gs gate-source voltage i d = 200 m a; v ds = 15 v bf246a; bf247a - 1.5 - - 4.0 v bf246b; bf247b - 3.0 - - 7.0 v bf246c; bf247c - 5.5 - - 12.0 v i dss drain current v gs = 0; v ds = 15 v; note 1 bf246a; bf247a 30 - 80 ma bf246b; bf247b 60 - 140 ma bf246c; bf247c 110 - 250 ma i gss gate leakage current v gs = - 15 v; v ds = 0 - - - 5 na symbol parameter conditions min. typ. max. unit c is input capacitance i d = 10 ma; f = 1 mhz; v ds = 15 v - 11 - pf c rs reverse transfer capacitance i d = 10 ma; f = 1 mhz; v ds = 15 v - 3.5 - pf c os output capacitance i d = 10 ma; f = 1 mhz; v ds = 15 v - 5 - pf ? y fs ? forward transfer admittance i d = 10 ma; f = 1 khz; v ds = 15 v 8 17 - ms f gfs cut-off frequency g fs = 0.7 of its value at 1 khz; v gs = 0 - 450 - mhz
1996 jul 29 4 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf246a; bf246b; bf246c; bf247a; bf247b; bf247c package outline fig.2 to-92 variant. dimensions in mm. (1) terminal dimensions in this zone are uncontrolled. handbook, full pagewidth mbc015 - 1 2.54 4.8
max 4.2 max 0.66
0.56 1 2 3 5.2 max 12.7 min 2.5 max (1) 0.48
0.40 0.40
min 1.7
1.4
1996 jul 29 5 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf246a; bf246b; bf246c; bf247a; bf247b; bf247c definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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