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mil - prf - 19500/253h 25 march 2002 superseding mil - prf - 19500/253g 23 april 2001 performance specification semic onductor device, transistor, npn, silicon, low - power types 2n930 and 2n930ub jan, jantx, jantxv, jans, janhc and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this spe cification covers the performance requirements for npn silicon, low - power transistors. four levels of product assurance are provided for each device type as specified in mil - prf - 19500. two levels of product assurance are provided for die. 1.2 physical dimensions . see figure 1 (to - 18), figure 2 (ub, surface mount), and figures 3 and 4 (die). * 1.3 maximum ratings . unless otherwise specified, t c = +25 c. p t (1) t a = +25 c v cbo v ceo v ebo i c t j and t stg r q jc r q ja mw 360 v dc 60 v dc 45 v dc 6 ma dc 30 c - 65 to +20 0 c/w 97 c/w 485 (1) derate linearly at 2.06 mw/ c above t a = +25 c. 1.4 primary electrical characteristics . limits h fe1 (1) h fe2 (1) c obo |h fe | v be(sat) (1) v ce(sat) (1) v ce = 5 v dc i c = 10 a dc v ce = 5 v dc i c = 500 a dc v cb = 5 v dc i e = 0 100 khz f 1 mhz v ce = 5 v dc i c = 500 a dc f = 30 mhz i c = 10 ma dc i b = 0.5 ma dc i c = 10 ma dc i b = 0.5 ma dc min max 100 300 150 pf 8.0 1.5 6.0 v dc 0.6 1.0 v dc 1.0 (1) pulsed (see 4.5.1). amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 25 june 2002. inch - pound beneficial comments (reco mmendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense supply center, columbus, attn: dscc/vac, post office box 3990, columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil - prf - 19500/253h 2 2. applicable documents 2.1 general . the documen ts listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 speci fications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the depart ment of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil - prf - 19500 - semiconductor devices, general specification for. standard department o f defense mil - std - 750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm - dod ssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - prf - 19500. 3.2 qualifica tion . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3. 3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . interface and physical dimensions shall be as specified in mil - prf - 19500, a nd on figure 1 (t0 - 18), figure 2 (ub, surface mount) and figures 3 and 4 (die). 3.4.1 lead finish . lead finish shall be solderable in accordance with mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specifi ed in the acquisition document (see 6.2). 3.5 marking . devices shall be marked in accordance with mil - prf - 19500.
mil - prf - 19500/253h 3 dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7,8 ll .500 .750 12.70 19.05 7,8 lu .016 .019 0.41 0.48 7,8 l1 .050 1.27 7,8 l2 .250 6.35 7,8 p .100 2.54 q .030 0.76 5 tl .028 .048 0.71 1.22 3,4 tw .036 .046 0.91 1.17 3 r .010 0.25 10 a 45 tp 45 tp 6 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tl shall be held for a minimum lengt h of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0 .18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is unco ntrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions (similar to to - 18) .
mil - prf - 19500/253h 4 dimensions symbol inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 . 024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 2. physical dimensions, surface mount (ub version) .
mil - prf - 19500/253h 5 a - version notes: 1. chip size ................................ .............. 15 x 19 mils 1 mil . 2. chip thickness ................................ ...... 10 1.5 mil. 3. top metal ................................ ............. aluminum 15,000? minimum, 18,000? nominal. 4. back metal ................................ ........... a. gold 2,500? minimum, 3,000? nominal. b. eutectic mount ? no gold. 5. backside ................................ ............... collector. 6. bonding pad ................................ ......... b = 3 mils, e = 4 mils diameter. 7. passivation ................................ ........... si 3 n 4 (silicon nitride) 2 k? min, 2.2 k? nom. figure 3. physical dimensions, janhca die .
mil - prf - 19500/253h 6 b - version die size: .018 x .018 inch (0.4572 x 0.4572 mm). die thickness: .008 .0016 inch (0.2032 0.04064 mm ). base pad: .0025 inch (0.0635 mm) diameter. emitter pad: .003 inch (0.0762 mm) diameter. back metal: gold, 6,500 1,950 ?. top metal: aluminum, 19,500 2,500 ?. back side: collector. glassivation: sio 2 , 7,500 1,500 ?. figure 4. physical dimensions, janhcb and jankcb die .
mil - prf - 19500/253h 7 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.7 electrical test requirements . the electrical te st requirements shall be group a as specified herein. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4, and tables i, ii, and iii). 4 .2 qualification inspection . qualification inspection shall be in accordance with mil - prf - 19500 and as specified herein. * 4.2.1 group e qualification . group e qualification shall be performed herein for qualification or requalification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed by the first inspection lot to this revision to maintain qualif ication. * 4.3 screening (jans, jantx and jantxv levels only) . screening shall be in accordance with table iv of mil - prf - 19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed t he limits of table i herein shall not be acceptable. screen (see tableiv measurement measurement of mil - prf - 19500) jans levels jantx and jantxv levels 3c thermal impedance, method 3131 of mil - std - 750. thermal impedance, method 3131 of mil - std - 7 50. 9 i cbo2 , h fe2 not applicable 10 48 hours minimum 48 hours minimum 11 i cbo2 , h fe2 d i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; d h fe2 = 25 percent. i cbo2 , h fe2 12 see 4.3.1, 240 hours minimum see 4.3.1, 80 ho urs minimum 13 subgroups 2 and 3 of table i herein; d i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; d h fe2 = 25 percent. subgroup 2 of table i herein; d i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; d h fe2 = 25 percent. * 4.3.1 power burn - in conditions . power burn - in conditions are as follows: v cb = 10 - 30 v dc; apply p t = 360 mw dc. note: no heat sink or forced air cooling on the devices shall be permitted. 4.3.2 screening (janhc and j ankc) . screening of janhc and jankc die shall be in accordance with mil - prf - 19500, "discrete semiconductor die/chip lot acceptance". burn - in duration for the jankc level follows jans requirements; the janhc follows jantx requirements.
mil - prf - 19500/253h 8 4.4 conformanc e inspection . conformance inspection shall be in accordance with mil - prf - 19500, and as specified herein. if alternate screening is being performed in accordance with mil - prf - 19500, a sample of screened devices shall be submitted to and pass the requireme nts of group a1 and a2 inspections only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil - prf - 19500 and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil - prf - 19500 and 4.4.2.1. electrical measurement s (end - points) and delta requirements shall be in accordance with group a, subgroup 2 and table iii herein: delta requirements only apply to subgroups b4, and b5. see 4.4.2.2 for jan, jantx, and jantxv group b testing. electrical measurements (end - points ) and delta requirements for jan, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accordance with group a, subgroup 2 and table iii herein. * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500. subgroup method condition b4 1037 v cb = 10 v dc. b5 1027 v cb = 10 v dc; p d 3 100 percent of maximum rated p t (see 1.3). (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) option 1: 96 hours min, sample size in accordance wi th table via of mil - prf - 19500, adjust p d or t a to achieve t j = +275 c minimum. option 2: 216 hours min., sample size = 45, c = 0; adjust p d or t a to achieve t j = +225 c minimum. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the fail ed assembly lot shall be scrapped. step method condition 1 1039 steady - state life: test condition b, 340 hours, v cb = 10 - 30 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum power dissipation, p d = 75 percent of p t maximum rated as defined in 1.3 herein. no heat sink or forced - air cooling on the devices shall be permitted. n = 45 devices, c = 0. 2 1039 the steady - state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high - temperature life (non - operating), t = 340 hours, t a = +200 c. n = 22 , c = 0.
mil - prf - 19500/253h 9 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil - prf - 19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2 conformance inspection. when the final lead finis h is solder or any plating prone to oxidation at high temperature, the samples for life test ( subgroups b4 and b5 for jans and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c ins pection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil - prf - 19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end - points) and delta requirements shall be in accordance with group a, subgroup 2 and table iii herein; delta requirements only apply to subgroup c6. 4.4.3.1 group c inspection, table vii (jans) of mil - prf - 19500. subgroup method condition c2 2036 test condition e (n ot applicable for ub devices). c6 1026 1,000 hours at v cb = 10 v dc; power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. 4.4.3.2 group c inspection, table vii (jan, jantx, and jantx v) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e ( not applicable for ub devices). c5 3131 see 4.5.2. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from a ny inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for t hat subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix e, table ix of mil - prf - 19500 and as specified herein. electrical measurements (end - points) shall be in accordance with table i, subgroup 2 herein. 4.5 method of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of m il - std - 750.
mil - prf - 19500/253h 10 4.5.2 thermal resistance . thermal resistance measurements shall be performed in accordance with method 3131 of mil - std - 750 (for qualification only). the following details shall apply: a. collector current magnitude during power applications shall b e 28 ma dc minimum. b. collector to emitter voltage magnitude 3 20 v dc. c. reference temperature measuring point shall be the case. d. reference point temperature shall be +25 c t r +75 c and recorded before the test is started. e. mo unting arrangement shall be with heat sink to case. f. maximum limit shall be r q jc = 97 c/w.
mil - prf - 19500/253h 11 table i. group a inspection . inspection 1 / mil - std - 750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temperature cycling 3 / 4 / 1051 test condition c, 25 cycles . n = 22 devices, c = 0 hermetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = 300 c at t = 2 hrs n = 11 wires, c = 0 decap internal visual (design verification) 4 / 2075 n = 4 device, c = 0 subgroup 2 collector to base cutoff current 3036 bias condition d, v cb = 60 v dc i cbo1 10 m a dc emitter to base cutoff curre nt 3061 bias condition d, v eb = 6 v dc i ebo1 10 m a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 45 v dc collector to emitter cutoff current 3041 bias condition c; v ce = 45 v dc i ces1 2.0 na dc collector to emitter cutoff current 3041 bias condition c; v ce = 5 v dc i ceo 2.0 na dc emitter to base cutoff current 3061 bias condition d; v eb = 5 v dc i ebo2 5 na dc see footnotes at end of table.
mil - prf - 19500/253h 12 table i. group a inspection ? continued. inspection 1 / mil - std - 750 limit unit method conditions symbol min max subgroup 2 - continued. collector to base cutoff current 3036 bias condition d; v cb = 45 v dc i cbo2 10 na dc forward - current transfer ratio 3076 v ce = 5 v dc; i c = 10 m a dc pulsed (see 4.5.1) h fe1 100 300 forward - current transfer ratio 3076 v ce = 5 v dc; i c = 500 m a dc pulsed (see 4.5.1) h fe2 150 forward - current transfer ratio 3076 v ce = 5 v dc; i c = 10 ma dc h fe3 600 collector - emitter saturation voltage 3071 i c = 10 ma dc; i b = 0.5 ma dc pulsed (see 4.5.1) v ce(sat) 1.0 v dc base - emitter saturation voltage 3066 test condition a; i c = 10 ma dc; i b = 0.5 ma dc; pulsed (see 4.5.1) v be(sat) 0.6 1.0 v dc subgroup 3 hi gh temperature operation t a = +150 c collector to base cutoff current 3036 bias condition c;v ce = 45 v dc pulsed (see 4.5.1) i ces2 10 m a dc low temperature operation t a = - 55 c forward - current transfer ratio 3076 v ce = 5 v dc; i c = 10 m a dc h fe4 20 subgroup 4 small - signal short - circuit forward current transfer ratio 3206 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h fe 150 600 magnitude of small - signal short - circuit forward current transfer ratio 3306 v ce = 5 v dc; i c = 5 00 m a dc; f = 30 mhz | h fe | 1.5 6.0 open circuit output capacitance 3236 v cb = 5 v dc; i e = 0; 100 khz f 1 mhz c obo 8 pf see footnotes at end of table.
mil - prf - 19500/253h 13 table i. group a inspection ? continued. inspection 1 / mil - std - 750 limit uni t method conditions symbol min max subgroup 4 - continued. noise figure test 1 test 2 test 3 3246 v ce = 5 v dc; i c = 10 m a dc; r g = 10 k w f = 100hz f = 1 khz f = 10 khz nf 5 3 3 db db db small - signal open - circuit output admi ttance 3216 v cb = 5 v dc; i e = 1.0 ma dc; f = 1 khz h oe 0 1.0 mhos small - signal open - circuit reverse voltage transfer ratio 3211 v cb = 5 v dc; i e = 1.0 ma dc; f = 1 khz h re 6 x 10 - 4 small - signal short - circuit input impedance 3201 v cb = 5 v dc; i e = 1.0 ma dc; f = 1 khz h ie 25 32 w subgroups 5 and 6 not applicable 1 / for sampling plan, unless otherwise specified, see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil - prf - 19500/253h 14 table ii. group e inspection (all quality levels) ? for qualification only . * inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 and table iii herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements s ee group a, subgroup 2 and table iii herein. subgroup 3 not applicable subgroups 4, 5, 6 and 7 not applicable subgroup 8 reverse stability 1033 condition a for devices 3 400 v. condition b for devices < 400 v. 45 devices c = 0
mil - prf - 19500/253h 15 t able iii. groups b, c, and e delta measurements. * step inspection mil - std - 750 symbol limit unit method conditions 1 collector - base cutoff current 3036 bias condition d, v cb = 45 v dc d i cb02 1 / 100 percent of initial value or 5 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 5 v dc; i c = 500 m a dc; pulsed see 4.5.1. d h fe2 1 / 25 percent change from initial reading. 1 / devices which exceed the group a limits for this test shall not be accepted. 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the resp onsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging activity within the military department or defense agency, or within the military department's syste m command. packaging data retrieval is available from the managing military department's or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil - prf - 19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following : a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and if required, the specific issue of individual documents referenced (see 2.2.1). c. the lead finish as specified (see 3.4.1). d. type designation and quality assurance level. e. packaging requirements (see 5.1). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qual ified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offe r to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supp ly center, columbus, attn: dscc - vqe, p.o. box 3990, columbus, oh 43216 - 5000.
mil - prf - 19500/253h 16 6.4 suppliers of janhc die . the qualified janhc and jankc suppliers with the applicable letter version (example janhca2n930) will be identified on the qml. janc ordering inf ormation pin manufacturer 43611 34156 2n930 janhca2n930 janhcb2n930 jankcb2n930 6.5 changes from previous issue . the margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. this w as done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the m arginal notations and relationship to the last previous issue. custodians: preparing activities: army - cr dla ? cc navy - ec air force - 11 (project 5961 - 2506) nasa - na dla - cc review activities: army - ar, av, mi, sm navy - as air force ? 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on cu rrent contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number 0/429 mil - prf - 19500/253h 2. document date 25 march 2002 3. document title semiconductor device, transistor, npn, silicon, low - power types 2n930 and 2n930ub jan, jantx, jantxv, jans, janhc and jankc 4. nature of change (identify par agraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. tel ephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center, columbus attn: dscc - vac, p.o. box 3990 columbus, oh 43216 - 5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dls c - lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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