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mil-prf-19500/301f 16 february, 2002 superseding mil-prf-19500/301e 4 october 2000 performance specification semiconductor device, transistor, npn silicon, low-power type 2n918 and 2n918ub jan, jantx, jantxv and jans, janhc and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the detail requirement s for npn, silicon, ultra- high frequency transistors. four levels of product assurance are provided for each dev ice type as specified in mil-prf-19500 and two levels of product assurance are provided for unencapsulated devices. 1.2 physical dimensions . see figure 1 (to - 72), figure 2 for ub and figure 3 (janhc and jankc). 1.3 maximum ratings . types p t 1 / t a = +25 c v cbo v ceo v ebo i c t stg and t j mw v dc v dc v dc ma dc c 2n918 2n918ub 200 200 30 30 15 15 3.0 3.0 50 50 -65 to +200 1 / derate linearly, 1.14 mw/ c above t a = 25 c 1.4 primary electrical characteristics at t a = +25 c . limit |h fe | v ce = 10 v dc i c = 4 ma dc f = 100 mhz r b ' c c v cb = 10 v dc i e = -4.0 ma dc f = 79.8 mhz c obo v cb = 10 v dc i e = 0 ma dc 100 khz f 1 mhz nf v ce = 6 v dc i c = 1 ma dc f = 60 mhz g s = 2.5 mmho g pe v cb = 12 v dc i c = 6.0 ma dc f = 200 mhz ps pf db db minimum 6.0 15 maximum 18.0 25 1.7 6.0 amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: defens e supply center, columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using the standardiza tion document improvement proposal (dd form 1426) appearing at the end of this document or by letter. the documentation and process conv ersion measures necessary to comply with this document shall be completed by 16 may, 2002.
mil-prf-19500/301f 2 1.4 primary electrical characteristics at t a = +25 c - continued. limit h fe1 v ce = 10 v dc i c = 500 a dc h fe2 v ce = 1.0 v dc i c = 3.0 ma dc h fe3 v cb = 10 v dc i c = 10 ma dc minimum 10 20 20 maximum 200 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor device s, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3).
mil-prf-19500/301f 3 dimensions inches millimeters symbol min max min max notes cd .178 .195 4.52 4.95 5 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 5 lc .100 tp 2.54 tp 7,8 ld .016 .021 .406 .533 7,8 ll .500 .750 12.70 19.05 7,8 lu .016 .019 .41 .48 l1 .050 1 .27 l2 .250 6.35 p .100 2.54 q .040 1.02 5 tl .028 .048 .71 1.22 tw .036 .046 .91 1.17 r .007 .18 45 tp notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18mm) radius of true position (tp) at ma ximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all four leads. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). figure 1. physical dim ensions for 2n918, (t0-72). to-72
mil-prf-19500/301f 4 dimensions symbo l inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 2. physical dimens ions for 2n918ub, surface mount . ub
mil-prf-19500/301f 5 b e die size--------- .016 x .016 inches, (0.406 mm x 0.406mm). die thickness--- .008 .0016 inches, (0.203 mm x 0.406mm). base pad-------- .0027 x .0027 inches, (0.069 mm x 0.069 mm). emitter pad----- .0027 x .0027 inches, (0.069 mm x 0.069 mm). back metal----- gold, 6500 1950 ang top metal------ alum inum, 17500 2500 ang back side------ collector glassivation--- sio 2 , 7500 1500 ang figure 3. janhc and jankc (a-version) die dimensions .
mil-prf-19500/301f 6 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and defin itions used herein shall be as specified in mil-prf-19500 and as follows. g s ............ noise source conductance. p o ............ oscillator, power output. r be .......... external resistance, base to emitter. 3.4 interface and physical dimensions . interface and physical dimensi ons shall be as specified in mil-prf-19500, and figures 1, 2, and 3 herein. 3.4.1 lead finish . lead finish shall be solderable in accordanc e with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.5 electrical perform ance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6 electrical test requirements . the electrical test requirements s hall be the subgroups in table i herein. 3.7 marking . marking shall be in accordance with mil-prf-19500. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500.
mil-prf-19500/301f 7 4.3 screening . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with tabl e i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil-prf-19500) measurement jans level jantx and jantxv levels *3c thermal impedance, method 3131 of mil-std-750. thermal impedance, method 3131 of mil-std-750. 9 i cbo1 and h fe2 11 i cbo1 and h fe2 ? i cbo1 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe2 = 15 percent. i cbo1 and h fe2 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; ? i cbo1 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe2 = 15 percent. subgroup 2 of table i herein; ? i cbo1 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe2 = 20 percent. 4.3.1 power burn-in conditions . power burn-in conditions are as follows: 2n918, ub.........................v cb = 5 - 15 v dc, p t = 200 mw at t a = room ambient as defined in the general requirements of paragraph 4.5 in mil-std-750. note: no heat sink or forced air c ooling on the devices shall be permitted. 4.3.2. screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500, ?discrete semiconductor die/chip lot accept ance?. burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. group a inspecti on shall be performed on each sublot. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) and table vib (jan, jantx, and jantxv) of mil-prf-19500 and 4.4.2.1 and 4.4.2.2 herein. electric al measurements (end-points) shall be in accordance with table i, subgroup 2 herein. delta measurements shall be in accordance with table ii herein.
mil-prf-19500/301f 8 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method conditions b3 2037 test condition a. all inter nal leads for each device shall be pulled separately. * b4 1037 v cb = 10 v dc, 2,000 cycles. * b5 1027 v cb = 10 v dc; 1,000 hours maximum rated power shall be applied and ambient temperature adjusted to achieve t j = +150 c minimum. n = 45, c = 0. 4.4.2.2 group b inspection, table vib (jan, jantx and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wa fer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method conditions 1 1027 steady-state life: test condition b, 340 hours, v cb = 10 v dc; maximum rated power shall be applied and ambient temperature adjusted to achieve t j = +150 c minimum. n = 45 devices, c = 0. for small lots, n = 12 devices, c = 0. 2 1027 the steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high temperature life ( non-operating), t = 340 hours; t a = +200 c. n = 22, c = 0. ? 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx and jantxv samples shall be sele cted randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lo t. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2 conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx and jantxv) may be pulled prior to the application of final lead finish. ?
mil-prf-19500/301f 9 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil-prf- 19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measur ements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and table ii herein. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500 . subgroup method conditions c2 2036 test condition e., not applicable to ub. c6 1026 v cb = 10 v dc, 1,000 hours; maximum rated power shall be applied and ambient temperature adjusted to achieve t j = +150 c minimum. n = 45 devices, c = 0. for small lots, n = 12 devices, c = 0. 4.4.3.2. group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e; not applicable for ub devices. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead fi nish procured to the same specification which is submitted to and passes group a tests for conformance inspec tion. when the final lead finish is solder or any plating prone to oxidation at high temper ature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a singl e device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be performed for qualific ation or re-qualification only. in case qualification was awarded to a prior revision of the associ ated specification that did not request the performance of table iii herein must be performed to maintain qualification. 4.5 methods of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 input capacitance . this test shall be conducted in accordance with method 3240 of mil-std-750 except that the output capacitor shall be omitted. 4.5.2 disposition of case l ead during electrical measurements . unless otherwise specified all electrical measurements and operating life test shall be performed with the case lead connected to the emitter. 4.5.3 noise figure . the noise figure shall be measured using commercially available test equipment and its associated standard test pr ocedures (see figure 4). 4.5.4 collector-base time constant . this parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector-base terminal s, and measuring the ac voltage drop (v eb ) with a high-impedance rf voltmeter across the emitter-base terminals. with f = 79.8 mhz used for the 1.0 volt signal, the following computation applies: r b ' c c : (psec) = 2 x v eb (millivolts)
mil-prf-19500/301f 10 table i. group a inspection . inspection 1 / mil-std-750 symbol limits unit method conditions min max subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 2 devices, c = 0 heremetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 breakdown voltage, collector to base 3036 bias condition d, v cbo = 30v i cbo2 1 a dc breakdown voltage, collector to emitter 3011 bias condition d, i c = 3.0 ma dc v (br)ceo 15 v dc breakdown voltage, emitter to base 3061 bias condition d, v eb = 3v i ebo2 10 a dc collector to base cutoff current 3036 bias condition d, v cb = 25 v dc i cbo1 10 na dc emitter to base cutoff current 3061 bias condition d, v eb = 2.5 v dc i ebo1 10 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 a dc; h fe1 10 forward-current transfer ratio 3076 v ce = 1.0 v dc; i c = 3.0 ma dc; h fe2 20 200 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc; h fe3 20 collector to emitter voltage (saturated) 3071 i c = 10 ma dc; i b = 1.0 ma dc; v ce(sat) 0.4 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 10 ma dc; i b = 1.0 ma dc v be(sat) 1.0 v dc see footnotes at end of table.
mil-prf-19500/301f 11 table i. group a inspection - continued . inspection 1 / mil-std-750 symbol limits unit method conditions min max subgroup 3 high temperature operation 3036 t a = +150 c collector to base cutoff current bias condition d, v cb = 25 v dc i cbo2 1.0 a dc low-temperature operation 3076 t a = -55 c v ce = 1.0 v dc; i c = 3.0 ma dc h fe4 10 forward-current transfer ratio 3306 v ce = 10 v dc; i c = 4.0 ma dc; f = 100 mhz |h fe | 6.0 18 noise figure v ce = 6 v dc; i c = 1.0 ma dc; f = 60 mhz; g s = 2.5 mmho (see 4.5.2, 4.5.3, and figure 4) nf 6.0 db small-signal power gain 3256 v cb = 12 v dc; i c = 6.0 ma dc; f = 200 mhz; (see figure 5) g pe 15 db collector-base time constant v cb = 10 v dc; i e = -4.0 ma dc; f = 79.8 mhz (see 4.5.2 and 4.5.4) r b ' c c 25 ps oscillator power output v cb = 15 v dc; i c = 8.0 ma dc; f = 500 mhz (see figure 6) p o 30 mw collector efficiency v cb = 15 v dc; i c = 8.0 ma dc; f = 500 mhz (see figure 6) 25 % subgroup 5 not applicable 1 / for sampling plan (unless otherwise specified see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample si ze of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/301f 12 table ii. groups b and c delta electrical measurements . 1 / 2 / 3 / step inspection mil-std-750 symbol limits unit method conditions min max 1. collector-base cutoff current 3036 bias condition d; v cb = 25 v dc ? i cbo1 3 / 100 percent of initial value or 5 na dc, whichever is greater. 2. forward-current transfer ratio 3076 v ce = 1.0 v dc; i c = 3.0 ma dc ? h fe2 3 / 25 percent change from initial reading 3. collector-emitter voltage (saturated) 3071 i c = 10 ma dc; i b = 1.0 ma dc ? v ce(sat ) 3 / 50 mv dc change from previously measured value. 1 / the delta electrical measurements for tabl e via (jans) of mil-prf-19500 are as follows: a. subgroup 4, see table ii herein, step 3. b. subgroup 5, see table ii herein, steps 1, 2 and 3. 2 / the delta electrical measurements for table vii of mil-prf-19500 are as fo llows: subgroup 6, see table ii herein, steps 1, 2 and 3 for jans level. 3 / devices which exceed the group a limits for this test shall not be acceptable.? *table iii. group e inspection (all qualit y levels) ? for qualification only . inspection mil-std-750 qualification method conditions subgroup 1 45 devices c = 0 temperature cycling (air to air) 1051 test condition c, 500 cycles. hermetric seal 1071 fine leak gross leak electrical measurements see group a, subgroup 2 and table ii herein. subgroup 2 45 devices c = 0 intermittent life 1037 intermittent operation life: vcb = 10 v dc; 6,000 cycles. electrical measurements see group a, subgroup 2 and table ii herein. subgroup 3, 4, 5, 6, and 7 not applicable subgroup 8 reverse stability 1033 condition a 400 v condition b < 400 v 45 devices c = 0
mil-prf-19500/301f 13 notes: 1. the test fixture shall consist of a 60 mhz tuned amplifier and suitable biasing circuits. it should be constructed utilizing very high-frequency design techniques. 2. the effective source susceptance should be tuned for each device being tested to obtain minimum noise figure. 3. the hp-343a has a 50-ohm output resist ance, therefore a suit able impedance transformer must be used to obtain an effective source c onductance of 2.5 mmho at the transistor with minimum losses. figure 4. block diagram for noise-figure test .
mil-prf-19500/301f 14 neutralization procedure : a. connect a 200 mhz signal generator (with a 50 ohm output impedance) to the input terminals of the amplifier, and connect a 50 ohm rf voltmeter to the output terminals of the amplifier. b. apply v ee and v cc to obtain the specified test conditions. c. adjust the output of the signal generat or to approximately 10 millivolts and tune c 1 and c 3 for maximum output. d. interchange the connections to the signal generat or and rf voltmeter and with sufficient signal applied at the output terminals, tune l 2 for a minimum indication on the rf voltmeter. e. repeat this sequence until optimum se ttings are obtained for all variables. circuit-component information : c1: 3-12 pf c2 and c7: 1000 pf c3: 1.5 - 7.5 pf c4 and c5: 0.01 f c6: 0.05 f l1: 3? t no. 16 awg 5/16" id, 7/16" length, turns ratio ? 2 to 1 l2: 0.4 - 0.65 h, miller no. 4303 (or equal) l3: 8 t no. 16 awg, 1/8" id, 7/8" length, turns ratio ? 8 to 1 l4: 200 mhz rfc r1: 100 ? r2: 1 k ? figure 5. small-signal power gain .
mil-prf-19500/301f 15 oscillator adjustment procedure : measurement of p o shall be made in this circuit or a suitable equi valent. the circuit adj ustment procedure is as follows: a. set v cc and v ee to obtain the specified test conditions. b. adjust the stub tuner to obtain the maximu m output at the specified frequency of oscillation. c. check i c and reset if necessary. d. read p o . note 1. collector efficiency ( ), may be determined as follows: in % p o x 100 where p o is in milliwatts 120 circuit-component information : c1 and c3: 1000 pf c2: 50 pf c4: 75 pf r1: 2.2 k ? l1 and l3: 500 mc rfc l2: 2 turns no. 16 awg, 3/8" od, 1?" length l4: 9 turns no. 22 awg, 3/16" od, ?" length double-stub tuner consists of the follo wing commercially available components: 2 gr type 874 tee (or equivalent) 1 gr type 874-d20 adjustable stub (or equivalent) 1 gr type 874-la adjustable line (or equivalent) 1 gr type 874-wn3 short-circuit termination (or equivalent) figure 6. oscillator power output .
mil-prf-19500/301f 16 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s should be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example janhca2n918) will be identified on the qpl. die ordering information pin manufacturer 34156 2n918 2n918 janhca2n918 jankca2n918 * 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue.
mil-prf-19500/301f 17 custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2556) nasa - na dla - cc review activities: army - ar, mi navy - as, mc, sh air force - 19, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/301f 2. document date 16 february 2002 3. document title semiconductor device, transistor, npn silicon, low-power type 2n918 and 2n918ub jan, jantx, jantxv and jans, janhc and jankc 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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