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mil-prf-19500/368f 8 july 2002 superseding mil-prf-19500/368e 24 august 2001 performance specification semiconductor device, transistor, npn, silicon, low-power types: 2n3439, 2n3439l, 2n3439ua, 2n3440, 2n3440l and 2n3440ua, jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, silicon, low-power, high voltage transistors. four levels of product assurance are provided for each encapsul ated device types as specified in mil-prf-19500, and two levels of product assu rance for each unencapsulated device type die. * 1.2 physical dimensions . see figure 1 (similar to to-5 and to-39), figure 2 (janhca and jankca (a versions)), figure 3 (janhcb and jankcb (b versions)), and figur e 4 (2n3439ua and 2n3440ua surface mount versions). * 1.3 maximum ratings . unless otherwise specified, t a = +25 c. types p t (1) t a = +25 c p t (2) t c = +25 c v cbo v ebo v ceo i c t stg and t op r ja 2n3439, 2n3439l, 2n3439ua w 0.8 w 5.0 v dc 450 v dc 7 v dc 350 a dc 1.0 c -65 to +200 c/w 325 2n3440, 2n3440l 2n3440ua 0.8 5.0 300 7 250 1.0 -65 to +200 325 (1) derate linearly 5.7 mw/ c for t a > +60 c. (2) derate linearly 28.6 mw/ c for t c > +25 c. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 8 october 2002. beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: de fense supply center columbus, attn: dscc-vac, p. o. box 3990, columbus, oh 43216-5000, by using t he standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/368f 2 1.4 primary electr ical characteristics . h fe2 (1) h fe1 (1) |h fe | c obo v be(sat) (1) v ce(sat) v ce = 10 v dc i c = 2 ma dc v ce = 10 v dc i c = 20 ma dc v ce = 10 v dc i c = 10 ma dc f = 5 mhz v cb = 10 v dc i e = 0 100 khz f 1 mhz i c = 50 ma dc i b = 4 ma dc i c = 50 ma dc i b = 4 ma dc pf v dc v dc min 30 40 3 max 160 15 10 1.3 0.5 (1) pulsed, (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. handbook department of defense mil-hdbk-6100 - list of case outlines and dimensions for discrete semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil-prf-19500/368f 3 figure 1. physical dimensi ons (similar to to-5 and to-39) .
mil-prf-19500/368f 4 symbol dimensions notes inches millimeters min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 ld .016 .021 0.41 0.53 3, 10 ll see notes 10, 12, and 13 l1 .050 1.27 11 lu .016 .019 0.41 0.48 4, 10 m .1414 nom 3.591 nom 7 n .0707 nom 1.796 nom 7 p .100 2.54 5 q 6 tl .029 .045 0.74 1.14 9 tw .028 .034 0.71 0.86 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. measured in the zone beyond .250 inch (6.35 mm) from the seating plane. 4. measured in the zone .50 inch (1.27 mm) from the seating plane. 5. variations on dimension cd in this zone shall not exceed .010 inch (0.25 mm). 6. outline in this zone is not controlled. 7. when measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of the transistor, maximum diameter leads shall be within . 007 inch (0.18 mm) of their true location relative to a maximum width tab. smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 8. the collector shall be electrically connected to the case. 9. measured from the maximum di ameter of the actual device. 10. all three leads (see 3.4.1). 11. diameter of leads in this zone is not controlled. 12. for transistor types 2n3439 and 2n3440, l = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. 13. for transistor types 2n3439l and 2n3440l, l = 1. 500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. figure 1. physical dimensions - continued.
mil-prf-19500/368f 5 ltr inches millimeters min max min max a .038 .044 0.97 1.12 c .038 .044 0.97 1.12 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die thickne ss are, .006 inch (0.15 mm) to .012 inch (0.30 mm). metallization, top: al = 17,500 ? minimum, 20,000 ? nominal. back: au = 2,500 ? minimum, 3,000 ? nominal. bonding pad: b = .004 inch (0.10 mm) by .005 inch (0.13 mm). e = .004 inch (0.10 mm) by .005 inch (0.13 mm). 4. backside is collector. 5. requirements in accordance with mi l-prf-19500 are performed in a to-5 package. * figure 2. physical dimensions janhca and jankca (die) a versions .
mil-prf-19500/368f 6 1. chip size................................. . 040 x .040 inch .002 inch (1.02 mm x 1.02 mm 0.05 mm). 2. chip thi ckness ........................ .010 .0015 inch nominal (0.254 mm 0.038 mm). 3. top metal................................ aluminum 30,000 ? minimum, 33,000 ? nominal. 4. back metal............................... a. al/ti/ni/ag 12k ? /3k ? /7k ? /7k ? minimum,15k ? / 5k ? /10k ? /10k ? nominal. b. gold 2.500 ? minimum, 3000 ? nominal. 5. backside................................. collector. 6. bonding pad........................... b = .005 x . 008 inch (0.127 mm x 0.203 mm). e = .010 x .007 inch (0.254 mm x 0.178 mm). notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 3. physical dimensions janhcb and jankcb (die) b versions .
mil-prf-19500/368f 7 dimensions symbol inches millimeters note min max min max a .061 .075 1.55 1.90 3 a1 .029 .041 0.74 1.04 b1 .022 .028 0.56 0.71 b2 .075 ref 1.91 ref b3 .006 .022 0.15 0.56 5 d .145 .155 3.68 3.93 d1 .045 .055 1.14 1.39 d2 .0375 bsc .952 bsc d3 .155 3.93 e .215 .225 5.46 5.71 e3 .225 5.71 l1 .032 .048 0.81 1.22 l2 .072 .088 1.83 2.23 l3 .003 .007 0.08 0.18 5 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. dimension "a" controls the overall package thick ness. when a window lid is used, dimension "a" must increase by a minimum of .010 inch (0. 254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions "b3" minimum and "l3" minimum and t he appropriately castellation length define an unobstructed three-dimensional space traversing all of the cera mic layers in which a castellation was designed. (castellations are required on bottom two layers, optional on top ceramic layer.) dimension "b3" maximum and "l3" maximum define the maximum width and depth of the castellation at any point on its surface. measurement of these dimensions may be made prior to solder dipping. * figure 4. physical dimensions, surface mount (2n3439ua, 2n3440ua) version .
mil-prf-19500/368f 8 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification s hall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. * 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500, mil-hdbk-6100 and on figure 1 (similar to to- 5 and to- 39), figure 2 (janhca and jankca, (a versions)), figure 3 (janhcb and jankcb (b versi ons)), and figure 4 (2n3439ua and 2n3440ua surface mount versions). 3.4.1 lead finish . lead finish shall be solderable in accordance with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.5 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6 electrical test requirements . the electrical test requirements shall be the subgroups specified in table i herein. 3.7 marking . marking shall be in accordance with mil-prf- 19500. at the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and table ii herein. * 4.2.1 group e qualification . group e inspection shall be performed for qua lification or re-qualification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed by the next inspection lot to this revision to maintain qualification.
mil-prf-19500/368f 9 * 4.3 screening (jans, jantxv, and jantx levels only) . screening shall be in accordance with mil-prf-19500 and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv measurement of mil-prf-19500) jans level jantx and jantxv levels 3c thermal impedance (see 4.3.3) thermal impedance (see 4.3.3) 7 hermetic seal (optional) (1) 9 i cbo1 and h fe1 not applicable 10 48 hours minimum 48 hours minimum 11 i cbo1 ; h fe1 ; ? i cb01 = 100 percent of initial value or 0.5 a dc, whichever is greater; ? h fe1 = 15 percent of initial value. i cbo1 and h fe1 12 see 4.3.2, 240 hours minimum see 4.3.2, 80 hours minimum 13 subgroups 2 and 3 of table i herein; ? i cb01 = 100 percent of initial value or 200 na dc, whichever is greater; ? h fe1 = 15 percent of initial value. subgroup 2 of table i herein; ? i cb01 = 100 percent of initial value or 200 na dc, whichever is greater; ? h fe1 = 15 percent of initial value. 14 optional optional (1) (1) hermetic seal test shall be performed in either screen 7 or screen 14. 4.3.1 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500. as a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the requirements of table i, group a, subgroup 2. 4.3.2 power burn-in conditions . power burn-in conditions are as follows: v cb = 10 - 30 v dc. power shall be applied to achieve t j = +135 c minimum using a minimum p d = 75 percent of p t maximum rated as defined in 1.3. 4.3.3 thermal impedance (z jx measurements) . the z jx measurements shall be performed in accordance with method 3131 mil-std-750. read and record data (z jx ) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. the following conditions shall apply. a. i h forward heating cu rrent ----------- 250 ma. b. t h heating time -------------------------- 10 ms. c. i m measurement cu rrent -------------- 10 ma. d. t md measurement delay time ------- 30 - 60 s. e. v ce collector-emitter volt age ------- 10 v dc minimum. the maximum limit for z jx under these test conditions are z jx (max) = 20 c/w.
mil-prf-19500/368f 10 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. if alternate screening is being perfo rmed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the require ments of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection . group b inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in via (jans) of 4.4.2.1 herein. elec trical measurements (end-point s) requirements shall be in accordance with table i, group a, subgroup 2 herein. delta requirements shall be in accordance with 4.5.3 herein. see 4.4.2.2 herein for jan, jantx, and jantxv group b testing. elec trical measurem ents (end-points) requirements shall be in accordance with table i, group a, subgroup 2 herein. delta requirements shall be in accordance with 4.5.3 herein. * 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method condition b4 1037 v cb = 10 v dc, 2,000 cycles. b5 1027 v cb = 10-30 v dc; p d 100 percent of maximum rated p t (see 1.3). (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) option 1: 96 hrs min, sample size in accordance with table via of mil-prf-19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hrs min., sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum.
mil-prf-19500/368f 11 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sa mple at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 - 30 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot ever y twelve months of wafer production, however, group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life ( non-operating), t = 340 hours, t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be sele cted randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. fo r jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed table i, group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil-prf- 19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical meas urements (end-points) and delta requirements shall be in accordance with table i, group a, subgroup 2 and 4.5.3 herein. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, except the ua package. c6 1026 1,000 hours at v cb = 10 v dc; power shall be applied to achieve t j = +150 c minimum and a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. * 4.4.3.2 group c inspection, table v ii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e. c5 3131 see 4.5.2. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c s hall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testi ng of a subgroup using a single device type enclosed in the intended package type shall be considered as comply ing with the requirements for that subgroup.
mil-prf-19500/368f 12 * 4.4.4 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in appendix e, table ix of mil-prf-19500 and as specified in table iii herein. electrical measurements (end-points) shall be in accordance with table i, group a, s ubgroup 2 herein. delta measurements shall be in accordance with the steps of 4.5.3. 4.5 method of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement sha ll be as specified in section 4 of mil-std-750. 4.5.2 thermal resistance . thermal resistance measurements shall be conducted in accordance with method 3131 of mil-std-750. the following conditions shall apply: a. collector current magnitude during pow er application shall be 150 ma dc for r jc . b. collector emitter voltage magnitude shall be 10 v dc. c. reference temperature meas uring point shall be the case. d. reference temperature measuring point shall be +25 c t r +35 c. the chosen reference temperature shall be recorded before the test is started. e. mounting arrangement shall be with heat sink to case for r jc . maximum limit shall be r jc = 35 c/w. * 4.5.3 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol unit method conditions 1 collector-base cutoff current 3036 bias condition d, v cb = 360 v dc for 2n3439, 2n3439l, 2n3439ua v cb = 250 v dc for 2n3440, 2n3440l, 2n3440ua ? i cb01 (1) 100 percent of initial value or 200 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 10 v dc; i c = 20 ma dc; pulsed see 4.5.1 ? h fe1 (1) 15 percent change from initial reading. (1) devices which exceed the table i, group a limits for this test shall not be accepted.
mil-prf-19500/368f 13 * table i. group a inspection . inspection 1 / mil-std-750 symbol limit unit conditions min max subgroup 1 2 / visual and mechanical 3 / examination 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 n = 15 leads, c = 0 resistance to 3 / 4 / 5 / solvent 1022 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs, n = 11 wires, c = 0 decap internal visual (design verification) 4 / 2075 n = 4 devices, c = 0 subgroup 2 emitter to base cutoff current 3061 bias condition d, v eb = 7 v dc i ebo1 10 a dc collector to emitter cutoff 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3041 bias condition d v ce = 300 v dc v ce = 200 v dc i ceo 2 a dc collector to emitter cutoff current 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3041 bias condition a, v be = -1.5 v dc v ce = 450 v dc v ce = 300 v dc i cex 5 a dc collector to base cutoff current 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3036 bias condition d v cb = 360 v dc v cb = 250 v dc i cbo1 2 a dc see footnotes at end of table.
mil-prf-19500/368f 14 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 2 - continued collector to base cutoff current 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3036 bias condition d v cb = 450 v dc v cb = 300 v dc i cbo2 5 a dc base emitter voltage (nonsaturated) 3066 test condition a, pulsed (see 4.5.1), i c = 50 ma dc, i b = 4 ma dc v be(sat) 1.3 v dc collector to emitter voltage (saturated) 3071 pulsed (see 4.5.1), i c = 50 ma dc, i b = 4 ma dc v ce(sat) 0.5 v dc forward-current transfer ratio 3076 pulsed (see 4.5.1), v ce = 10 v dc, i c = 20 ma h fe1 40 160 forward-current transfer ratio 3076 pulsed (see 4.5.1), v ce = 10 v dc, i c = 2 ma h fe2 30 forward-current transfer ratio 3076 pulsed (see 4.5.1), v ce = 10 v dc, i c = 0.2 ma h fe3 10 subgroup 3 high temperature operation: t a = +150 c collector to emitter cutoff current 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3036 bias condition d v cb = 360 v dc v cb = 250 v dc i cb03 100 a dc low temperature operation: t a = -55 c forward-current transfer ratio 3076 v ce = 10 v dc, i c = 20 ma dc, pulsed (see 4.5.1) h fe4 15 subgroup 4 pulse response: 3251 test condition a turn-on time v cc = 200 v dc, i c = 20 ma dc, i b1 = 2 ma dc, see figure 5 t on 1 s turn-off time v cc = 200 v dc, i c = 20 ma dc, i b1 = -i b2 = 2 ma dc, see figure 5 t off 10 s see footnotes at end of table.
mil-prf-19500/368f 15 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 4 - continued magnitude of common- emitter small-signal short-circuit forward- current transfer ratio 3306 v ce = 10 v dc, i c = 10 ma dc, f = 5 mhz |h fe | 3 15 open capacitance input open circuited 3236 v cb = 10 v dc, i e = 0, 100 khz f 1 mh c obo 10 pf small-signal short- circuit forward- current transfer ratio 3206 v ce = 10 v dc, i c = 5 ma, f = 1 khz h fe 25 input capacitance (output open circuited) 3240 v cb = 5 v dc, i e = 0, 100 khz f 1 mhz c ibo 75 subgroup 5 safe operating area (continuous dc) 3051 (see figure 6) t c = +25 c, 1 cycle, t = 1.0 s. test 1 v ce = 5 v dc, i c = 1 a dc test 2 only 2n3439, 2n3439l, 2n3439ua v ce = 350 v dc, i c = 14 ma dc test 3 only 2n3440, 2n3440l, 2n3440ua electrical measurements v ce = 250 v dc, i c = 20 ma dc see table i, subgroup 2 and 4.5.3 herein. breakdown voltage, collector to emitter 2n3439, 2n3439l, 2n3439ua 2n3440, 2n3440l, 2n3440ua 3011 i c = 10 ma, r bb1 = 470 ohms v bb1 = 6 v, l = 25 mh minimum f = 30 to 60 hz v br(ceo) 350 250 v dc 1 / for sampling plan, see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the samp le size of the failed test or sequence of tests. 3 / separate samples may be used. 4 / not required for jans. 5 / not required for laser marked devices.
mil-prf-19500/368f 16 * table ii. group e inspection (all qua lity levels) - for qualification only . mil-std-750 inspection method conditions qualification subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life electrical measurements 1051 1071 1037 test condition c, 500 cycles see table i, group a, subgroup 2. intermittent operation life: v cb 10 v dc , 6000 cycles see table i, group a, subgroup 2. 45 devices c = 0 45 devices c = 0 subgroups 3, 4, 5, 6, and 7 not applicable subgroup 8 45 devices c = 0 reverse stability 1033 condition a for devices 400 v, condition b for devices < 400 v.
mil-prf-19500/368f 17 notes: 1. the rise time (t r ) and fall time (t f ) of applied pulse shall be 20 ns, duty cycle 2 percent, generator source impedance shall be 50 ohms, pulse width = 20 s. 2. output sampling oscilloscope: z in 100 k ? , c in 50 pf, and rise time 1.0 s. figure 5. pulse response test circuit .
mil-prf-19500/368f 18 note: also applies to the corresponding "l" and "ua" suffix devices. * figure 6. maximum safe operating graph (continuous dc) .
mil-prf-19500/368f 19 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). e. type designation and quality assurance level. 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturer?s list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center columbus, attn: dscc/ vqe, p. o. box 3990, columbus, oh 43216-5000.
mil-prf-19500/368f 20 * 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example janhca2n3439) will be identified on the qml. die ordering information pin manufacturer 33178 43611 2n3439 janhca2n3439 jankca2n3439 janhcb2n3439 jankcb2n3439 2n3440 janhca2n3440 jankca2n3440 janhcb2n3440 jankcb2n3440 * 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2607) dla - cc review activities: army - ar, mi, sm navy - as, mc air force - 19, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/368f 2. document date 8 july 2002 3. document title semiconductor device, transistor, npn, silicon, low-power types: 2n3439, 2n3439l, 2n3439ua, 2n3440, 2n3440l, and 2n 3440ua, jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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