igbt-ipm r series 600v / 300a 7 in one-package 7mbp300ra060 features temperature protection provided by directly detecting the junction temperature of the igbts low power loss and soft switching high performance and high reliability igbt with overheating protection higher reliability because of a big decrease in number of parts in built-in control circuit maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. dc bus voltage dc bus voltage (surge) dc bus voltage (short operating) collector-emitter voltage db reverse voltage inv collector current dc 1ms duty=55.5% collector power dissipation one transistor db collector current dc 1ms forward current of diode collector power dissipation one transistor junction temperature input voltage of power supply for pre-driver input signal voltage input signal current alarm signal voltage alarm signal current storage temperature operating case temperature isolating voltage (case-terminal) screw torque mounting (m5) terminal (m5) v dc v dc(surge) v sc v ces v r i c i cp -i c p c i c i cp i f p c t j v cc *1 v in *2 i in v alm *3 i alm *4 t stg t op v iso *5 item 0 0 200 0 - - - - - - - - - - 0 0 - 0 - -40 -20 - - - 450 500 400 600 600 300 600 300 1040 100 200 100 400 150 20 vz 1 vcc 15 125 100 ac2.5 3.5 * 6 3.5 * 6 v v v v v a a a w a a a w c v v ma v ma c c kv nm nm *1 apply vcc between terminal no. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 apply vin between terminal no. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 apply v alm between terminal no. 16 and 10. *4 apply i alm to terminal no. 16. *5 50hz/60hz sine wave 1 minute. *6 recommendable value : 2.5 to 3.0 nm electrical characteristics of power circuit (at tc=tj=25c, vcc=15v) item symbol condtion min. typ. max. unit inv collector current at off signal input collector-emitter saturation voltage forward voltage of fwd db collector current at off signal input collector-emitter saturation voltage forward voltage of diode i ces v ce(sat) v f i ces v ce(sat) v f v ce =600v input terminal open ic=300a -ic=300a v ce =600v input terminal open ic=100a -ic=100a C C 1.0 ma C C 2.8 v C C 3.0 v C C 1.0 ma C C 2.8 v C C 3.0 v fig.1 measurement of case temperature
7mbp300ra060 igbt-ipm electrical characteristics of control circuit (at tc=tj=25c, vcc=15v) item symbol condition min. typ. max. unit power supply current of p-line side pre-driver(one unit) power supply current of n-line side three pre-driver input signal threshold voltage (on/off) input zener voltage over heating protection temperature level hysteresis igbt chips over heating protection temperature level hysteresis collector current protection level inv db over current protection delay time (fig.2) under voltage protection level hysteresis alarm signal hold time sc protection delay time limiting resistor for alarm fsw=0 to 15khz tc=-20 to 100c * 7 fsw=0 to 15khz tc=-20 to 100c * 7 on off rin=20k ohm vdc=0v, ic=0a, case temperature, fig.1 surface of igbt chips tj=125c tj=125c tj=25c fig.2 tj=25c fig.3 i ccp i ccn v in(th) v z t coh t ch t joh t jh i oc i oc t doc v uv v h t alm t sc r alm 6 24 1.00 1.70 - 110 - 150 - 450 150 - 11.0 0.2 1.5 - 1425 - - 1.35 2.05 8.0 - 20 - 20 - - 10 - - 2 - 1500 32 114 1.70 2.40 - 125 - - - - - - 12.5 - - 12 1575 ma ma v v v c c c c a a s v v ms s ohm dynamic characteristics (at tc=tj=125c, vcc=15v) item symbol condition min. typ. max. unit switching time (igbt) switching time (fwd) ton ic=300a, vdc=300v toff trr if=300a, vdc=300v 0.3 - - - - 3.6 - - 0.4 s s s thermal characteristics ( tc=25c) item symbol typ. max. unit junction to case thermal resistance case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(j-c) rth(c-f) - 0.12 - 0.25 - 0.31 0.05 - c/w c/w c/w c/w inv igbt fwd db igbt item symbol min. typ. max. unit dc bus voltage operating power supply voltage range of pre-driver switching frequency of ipm screw torque mounting (m5) terminal (m5) v dc 200 - 400 v v cc 13.5 15 16.5 v f sw 1 - 20 khz - 2.5 - 3.0 nm - 2.5 - 3.0 nm recommendable value * 7 switching frequency of ipm
7mbp300ra060 igbt-ipm block diagram outline drawings, mm mass : 920g pre-drivers include following functions a) amplifier for driver b) short circuit protection c) undervoltage lockout circuit d) over current protection e) igbt chip over heating protection
7mbp300ra060 igbt-ipm characteristics (representative) control circuit 0 20 40 60 80 100 0 5 10 15 20 25 p ow er su p ply c urre nt vs . s w itchin g freq ue n cy tj=100c n-side p-side vcc=13v vcc=13v vcc=15v vcc=15v vcc=17v vcc=17v power supply current : icc (ma) switchin g frequency : fsw (khz) 0 0.5 1 1.5 2 2.5 12 13 14 15 16 17 18 input signal threshold voltage vs. power supply voltage input signal threshold voltage power supply voltage : vcc (v) tj=25c tj=125c } vin(on) } vin(off) : vin(on),vin(off) (v) 0 2 4 6 8 10 12 14 20 40 60 80 100 120 140 under volta g e vs. junction temperature under voltage : vuvt (v) junction temperature : t j (c) 0 0.2 0.4 0.6 0.8 1 20 40 60 80 100 120 140 under volta g e h y sterisis vs. jnction temperature under voltage hysterisis : vh (v) junction temperature : tj (c) 0 0.5 1 1.5 2 2.5 3 12 13 14 15 16 17 18 alarm hold time vs. power suppl y volta g e alarm hold time : talm (msec) power suppl y volta g e : vcc (v) tj=125c tj=25c 0 50 100 150 200 12 13 14 15 16 17 18 over heatin g characteristics tcoh,t j oh,tch,t j h vs. vcc over heating protection : tcoh,tjoh (c) power suppl y volta g e : vcc ( v ) tjoh tcoh tch,tjh oh hysterisis : tch,tjh (c)
7mbp300ra060 igbt-ipm inverter 0 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 3.5 c ollector current vs. c ollector-em itter voltage tj=25c vcc=13v vcc=15v vcc=17v collector current : ic (a) c ollector-e m itte r volta g e : vce (v) 0 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 3.5 collector current vs. collector-emitter voltage tj=125c vcc=13v vcc=15v vcc=17v collector current : ic (a) collector-emitter voltage : vce (v) 10 100 1000 10000 0 100 200 300 400 500 switching time vs. collector current edc=300v,vcc=15v,tj=25c switching time : ton,toff,tf (nsec) collector current : ic (a) toff ton tf 10 100 1000 10000 0 100 200 300 400 500 switching time vs. collector current edc=300v,vcc=15v,tj=125c switching time : ton,toff,tf (nsec) collector current : ic (a) toff ton tf 0 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 forward current vs. forward voltage forward current : if (a) forward voltage : vf (v) 125c 25c 10 100 1000 0 100 200 300 400 500 reverse recovery characteristics trr,irr vs. if reverse recovery current : irr(a) reverse recovery time : trr(nsec) forward current : if(a) trr125c trr25c irr125c irr25c
7mbp300ra060 igbt-ipm 0.001 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance igbt fwd thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 0 100 200 300 400 500 600 700 reversed biased safe operating area vcc=15v,tj 125c collector current : ic (a) collector-emitter voltage : vce (v) scsoa (non-repetitive pulse) rbsoa (repetitive pulse) 0 200 400 600 800 1000 1200 0 20406080100120140160 power derating for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 100 200 300 400 500 600 0 20406080100120140160 power derating for fwd (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 5 10 15 20 0 50 100 150 200 250 300 switching loss vs. collector current edc=300v,vcc=15v,tj=25c eon eoff err switching loss : eon,eoff,err (mj/cycle) collector current : ic (a) 0 5 10 15 20 0 50 100 150 200 250 300 switching loss vs. collector current edc=300v,vcc=15v,tj=125c eon eoff err switching loss : eon,eoff,err (mj/cycle) collector current : ic (a) < =
7mbp300ra060 igbt-ipm 0 200 400 600 800 1000 1200 0 20406080100120140 over current protection vs. junction temperature vcc=15v over current protection level : ioc(a) junction temperature : tj(c)
7mbp300ra060 igbt-ipm brake 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w) pulse width :pw (sec) igbt 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 reversed biased safe operating area vcc=15v,tj 125c collector current : ic (a) collector-emitter voltage : vce (v) scsoa (non-repetitive pulse) rbsoa (repetitive pulse) 0 100 200 300 400 500 0 20406080100120140160 power deratin g for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 50 100 150 200 250 0 20406080100120140 over current protection vs. junction temperature vcc=15v over current protection level : ioc(a) junction temperature : t j ( c) = < 0 20 40 60 80 100 120 140 160 00.511.522.533.5 collector current vs. collector-emitter voltage tj=125c collector current : ic (a) collector-em itter voltage : vce (v) vcc=13v vcc=15v vcc=17v 0 20 40 60 80 100 120 140 160 00.511.522.533.5 c ollecto r current vs. c olle cto r-emitte r vo lta ge tj=25c collector current : ic (a) collector-emitter voltage : vce (v) vcc=17v vcc=15v vcc=13v
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