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semitrans ? 3 trench igbt modules skm 200gb176d skm 200gal176d features

! " # typical applications $
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+" ,- gb gal absolute maximum ratings .& /
% symbol conditions values units igbt 0 .& / 2')) # 0 2&) / .& / .!) $ 3) / 23) $ # 45 # 45 ."#
6)) $ 7 8 .) 2.)) 9 7 : .) 9 ; 2')) 0 2.& / 2) < inverse diode # = 0 2&) / .& / .2) $ 3) / 2>) $ # =45 # =45 ."# =
6)) $ # = 5 2) 9
, 0 2&) / 22)) $ freewheeling diode # = 0 2&) / .& / .2) $ 3) / 2>) $ # =45 # =45 ."# =
6)) $ # = 5 2) 9
, 0 2&) / 22)) $ module # +45 - &)) $ 0 ( >) ,,, ? 2&) / (>),,,?2.& / $ 2
, >))) characteristics .& /
% symbol conditions min. typ. max. units igbt 7+- 7 # ! $ & . & 3 ! > # 7 ) 0 .& / ) 2 ) 6 $ ) 0 .& / 2 2 . 0 2.& / ) @ 2 2 7 2& 0 .&/ ! ' 3 6 a 0 2.&/ 2) 2. a +- #
2&) $ 7 2& 0 .&/ , . . >& 0 2.&/ , . > . @ 22 >
= .& 7 ) 2 5b ) &&
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&3 e 4 +0(- #7f ) 2. ghi skm 200gb176d... 1 06-10-2009 nos ? by semikron
semitrans ? 3 trench igbt modules skm 200gb176d skm 200gal176d features

! " # typical applications $
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&'& ( '&) $ *
+" ,- gb gal characteristics symbol conditions min. typ. max. units inverse diode = # =
2&) $9 7 ) 0 .& / , 2 ' 2 @ 0 2.& / , 2 ' 2 @ =) 0 .& / 2 2 2 6 0 2.& / ) @ 2 2 = 0 .& / > > a 0 2.& / & 6 & 6 a # 445 # = 2&) $ 0 2.& / 2@& $ c %h% 6')) $h< &. < 7 (2& 9 2.)) 62 e 4 +0(-j %% ) .& ghi fwd = # =
2&) $9 7 ) 0 .& / , 2 ' 2 @ 0 2.& / , 2 ' 2 @ =) 0 .& / 2 2 2 6 0 2.& / ) @ 2 2 = 0 .& / > > 0 2.& / & 6 & 6 # 445 # = 2&) $ 0 2.& / 2@& $ c %h% 6')) $h< &. < 7 (2& 9 2.)) 62 e 4 +0(-=j %% ) .& ghi module k 2& .)
4 l?l ,
( .& / ) 6& a 2.& / ) & a 4 +(- % ) )63 ghi 5
m 5! 6 & n 5
5! . & & n 6.& this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 200gb176d... 2 06-10-2009 nos ? by semikron
semitrans ? 3 trench igbt modules skm 200gb176d skm 200gal176d features

! " # typical applications $
%
&'& ( '&) $ *
+" ,- gb gal z th symbol conditions values units z th(j-c)l 4 2 3) mhi 4 . 6) mhi 4 6 3 . mhi 4 > 2 3 mhi 2 ) )'&6 . ) )2 6 ) )))3 > ) )))6 z th(j-c)d 4 2 2!) mhi 4 . !' mhi 4 6 .) mhi 4 > 6 mhi 2 ) )63. . ) ))@ 6 ) )))@ > ) ))& skm 200gb176d... 3 06-10-2009 nos ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 200gb176d... 4 06-10-2009 nos ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance fig. 10 typ. cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode reverse recovery charge skm 200gb176d... 5 06-10-2009 nos ? by semikron
ul recognized file no. e 63 532 j &! 7f j &! 7$k j &' skm 200gb176d... 6 06-10-2009 nos ? by semikron

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