technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 1600 a dc-collector current t c = 25 c i c 2600 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 3200 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 12,5 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 1600 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 3200 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 660 ka 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 4kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 1600a, v ge = 15v, t vj = 25c v ce sat 2,6 3,1 v collector-emitter saturation voltage i c = 1600a, v ge = 15v, t vj = 125c 3,1 3,6 v gate-schwellenspannung gate threshold voltage i c = 130ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v ... +15v q g 19 c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies 105 nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res 5,3 nf kollektor-emitter reststrom v ce = 1700v, v ge = 0v, t vj = 25c i ces 0,04 3 ma collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 125c 20 160 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges 400 na prepared by: alfons wiesenthal date of publication: 19.01.2001 approved by: christoph lbke; 06.02.2001 revision: 2 (serie) 1(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 1600a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 0,9 ? , t vj = 25c t d,on 0,3 s v ge = 15v, r g = 0,9 ? , t vj = 125c 0,3 s anstiegszeit (induktive last) i c = 1600a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 0,9 ? , t vj = 25c t r 0,19 s v ge = 15v, r g = 0,9 ? , t vj = 125c 0,19 s abschaltverz?gerungszeit (ind. last) i c = 1600a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 0,9 ? , t vj = 25c t d,off 1,2 s v ge = 15v, r g = 0,9 ? , t vj = 125c 1,2 s fallzeit (induktive last) i c = 1600a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 0,9 ? , t vj = 25c t f 0,15 s v ge = 15v, r g = 0,9 ? , t vj = 125c 0,16 s einschaltverlustenergie pro puls i c = 1600a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 0,9 ? , t vj = 125c, l s = 50nh e on 430 mws abschaltverlustenergie pro puls i c = 1600a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 0,9 ? , t vj = 125c, l s = 50nh e off 670 mws kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =1000v, v cemax =v ces -l sce di/dt i sc 6400 a modulinduktivit?t stray inductance module l sce 12 nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip r cc+ee 0,08 m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 1600a, v ge = 0v, t vj = 25c v f 2,1 2,5 v forward voltage i f = 1600a, v ge = 0v, t vj = 125c 2,1 2,5 v rckstromspitze i f = 1600a, - di f /dt = 9600a/sec peak reverse recovery current v r = 900v, vge = -10v, t vj = 25c i rm 1400 a v r = 900v, vge = -10v, t vj = 125c 1700 a sperrverz?gerungsladung i f = 1600a, - di f /dt = 9600a/sec recovered charge v r = 900v, vge = -10v, t vj = 25c q r 300 as v r = 900v, vge = -10v, t vj = 125c 560 as abschaltenergie pro puls i f = 1600a, - di f /dt = 9600a/sec reverse recovery energy v r = 900v, vge = -10v, t vj = 25c e rec 210 mws v r = 900v, vge = -10v, t vj = 125c 380 mws fz1600r17kf6c b2 2(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc 0,01 k/w thermal resistance, junction to case diode/diode, dc 0,017 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1 w/m*k / grease = 1 w/m*k r thck 0,008 k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj 150 c betriebstemperatur operation temperature t op -40 125 c lagertemperatur storage temperature t stg -40 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation aln kriechstrecke creepage distance 17 mm luftstrecke clearance 10 mm cti comperative tracking index min. 275 anzugsdrehmoment f. mech. befestigung m1 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 2 nm terminal connection torque terminals m8 8 - 10 nm gewicht weight g 1050 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 i c [a] v ce [v] i c [a] v ce [v] 0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tj = 25c tj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 i c [a] v ge [v] i f [a] v f [v] 0 500 1000 1500 2000 2500 3000 3500 5678910111213 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 500 1000 1500 2000 2500 3000 3500 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 e [mj] i c [a] e [mj] r g [ ? ? ? ? ] 0 200 400 600 800 1000 1200 1400 1600 1800 0 500 1000 1500 2000 2500 3000 3500 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r gon = r goff =0,9 ? ? ? ? , v ce = 900v, t j = 125c, v ge = 15v 0 500 1000 1500 2000 2500 01234567 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) i c = 1600a , v ce = 900v , t j = 125c, v ge = 15v 6(8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 0,94 4,72 1,425 2,92 i [sec] : igbt 0,027 0,052 0,09 0,838 r i [k/kw] : diode 7,85 3,53 1,12 4,52 i [sec] : diode 0,0287 0,0705 0,153 0,988 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g = 0,9 ohm, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 1600 1800 ic,modul ic,chip 0,0001 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 7 (8) fz1600r17kf6c b2.xls
technische information / technical information igbt-module igbt-modules fz1600r17kf6c b2 ?u?ere abmessungen / external dimensions 8(8) fz1600r17kf6c b2.xls
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