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| microwave power gaas fet microwave semiconductor tim5964-80sl technical data features ? low intermodulation distortion ? high gain im3=-30 dbc at pout= 42.0dbm g1db=7.0db at 5.9ghz to 6.4ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=49.0dbm at 5.9ghz to 6.4ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 48.0 49.0 ? power gain at 1db gain compression point g 1db db 6.0 7.0 ? drain current i ds1 a ? 18.0 20.0 gain flatness g db ? ? 0.8 power added efficiency add vds= 10v idsset? 10.0a f = 5.9 to 6.4ghz % ? 35 ? 3rd order intermodulation distortion im 3 dbc -25 -30 ? drain current i ds2 two-tone test po=42.0dbm (single carrier level) a ? ? 16.0 channel temperature rise tch (vds x ids +pin-p1db) x rth(c-c) c ? ? 100 recommended gate resistance(rg) : 28 (max.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 12.0a s ? 20 ? pinch-off voltage v gsoff v ds = 3v i ds = 200ma v -1.0 -1.8 -3.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 38 ? gate-source breakdown voltage v gso i gs = -1.0ma v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 0.5 0.6 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. dec. 2008
tim5964-80sl absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 26 total power dissipation (tc= 25 c) p t w 250 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (7-aa02c) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2 tim5964-80sl rf performance output power (pout) vs. frequency vds=10v i ds ? 18.0a pin=42.0dbm pout(dbm) 51 50 49 48 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 frequency(ghz) output power(pout) vs. input power(pin) 52 90 freq.=6.4ghz v ds =10v i ds set ? 10.0a pout add 51 50 80 49 70 60 50 40 30 20 add(%) pout(dbm) 48 47 46 45 44 43 36 38 40 42 44 46 pin(dbm) 3 tim5964-80sl power dissipation(pt) vs. case temperature(tc) 4 0 pt(w) 250 200 tc( c ) im3 vs. power characteristics v ds =10v i ds set ? 10.0a freq.=6.4ghz f=5mhz 100 0 38 0 40 80 120 160 200 -10 -20 -30 -40 -50 im3(dbc) 40 42 44 46 48 pout(dbm) @single carrier level |
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