CHM09N7NPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 700 volts current 8 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2006-02 * rugged and reliable. c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM09N7NPT units v dss drain-source voltage 700 v v gss gate-source voltage 30 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 167 w t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 62.5 8 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 30 * small flat package. (d2pak) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting s d g (1) (2) (3) d 2 p a k d 2 p a k d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r s ) 0 . 4 2 0 ( 1 0 . 6 7 ) 0 . 3 8 0 ( 9 . 6 9 ) 0 . 3 6 0 ( 9 . 1 4 ) 0 . 6 2 5 ( 1 5 . 8 8 ) 0 . 5 7 5 ( 1 4 . 6 0 ) 0 . 3 2 0 ( 8 . 1 3 ) 0 . 2 4 5 ( 6 . 2 2 ) 0 . 1 0 0 ( 2 . 5 4 ) 0 . 0 3 7 ( 0 . 9 4 0 ) 0 . 1 9 0 ( 4 . 8 3 ) 0 . 0 5 5 ( 1 . 4 0 ) 0 . 0 4 5 ( 1 . 1 4 ) 0 . 0 5 5 ( 1 . 4 0 ) 0 . 0 4 7 ( 1 . 1 9 ) 0 . 0 2 5 ( 0 . 6 4 ) 0 . 1 1 0 ( 2 . 7 9 ) 0 . 0 9 0 ( 2 . 2 9 ) 0 . 0 1 8 ( 0 . 4 6 ) 0 . 1 1 0 ( 2 . 7 9 ) 0 . 0 8 0 ( 2 . 0 3 ) 0 . 1 6 0 ( 4 . 0 6 ) 0 . 0 2 7 ( 0 . 6 8 6 ) 0 . 0 9 5 ( 2 . 4 1 ) m i n . k 3 1 2 1 gate 3 d rain ( heat sink ) 2 source
rating characteristic curves ( CHM09N7NPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 1.2 o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =5v , i d = 8a r ds(on) static drain-source on-resistance w vgs=10v, id=5a switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 300v i d = 8a , v g s = 10 v 40 t r rise time 14 50 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 250 a n a 700 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 700 v, v v gs gs = 30v, = 0 v v ds = 0 v a +100 -100 v gs = -30v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 2 v 76 t f fall time 14 q g total gate charge 9 vds=480v, id=8a vgs=10v turn-off time t off rgen= 10 w (note 2) (note 4) 4 8 nc 20 7 38 7 drain-source diode characteristics and maximum ratings 32 i v sd drain-source diode forward current drain-source diode forward voltage i s = 8a , v g s = 0 v 8 1.6 a v (note 1) (note 2) 10 42.5 i gssr s
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