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? power management in notebook computer, portable equipment and battery powered systems

p-channel mosfet ? -30v/-4a, r ds(on) = 85m ? (typ.) @ v gs = -10v r ds(on) = 140m ? (typ.) @ v gs = -4.5v ? super high density cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? sop-8 package ? ? ? ? ? lead free available (rohs compliant) apm4427 handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm4427 k : apm4427 xxxxx xxxxx - date code lead free code s s s g d d d d top view of sop ? 8 ( 1, 2, 3 ) d g d s s (4) (5,6,7,8) s d d note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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(t a = 25 c unless otherwise noted) !
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(t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage -30 v gss gate-source voltage 20 v i d * continuous drain current -4 i dm * pulsed drain current v gs =-10v -16 a i s * diode continuous forward current -2 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 2 p d * maximum power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm4427k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a -30 v v ds =-24v, v gs =0v -1 i dss zero gate voltage drain current t j =85 c -30 a v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -1 -1.5 -2 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =-10v, i ds =-4a 85 115 r ds(on) a drain-source on-state resistance v gs =-4.5v, i ds =-2.3a 140 180 m ? v sd a diode forward voltage i sd =-1.25a, v gs =0v -0.7 -1.3 v dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 13.5 ? c iss input capacitance 550 c oss output capacitance 120 c rss reverse transfer capacitance v gs =0v, v ds =-25v, frequency=1.0mhz 80 pf t d(on) turn-on delay time 10 20 t r turn-on rise time 10 25 t d(off) turn-off delay time 25 55 t f turn-off fall time v dd =-15v, r l =15 ? , i ds =-1a, v gen =-10v, r g =6 ? 5 15 ns
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$"%& (t a = 25 c unless otherwise noted) apm4427k symbol parameter test condition min. typ. max. unit gate charge characteristics b q g total gate charge 12.3 16 q gs gate-source charge 3.5 q gd gate-drain charge v ds =-15v, v gs =-10v, i ds =-4a 1.1 nc notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
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, 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '(
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-i d - drain current (a) drain current t j - junction temperature ( c) safe operation area -v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) -i d - drain current (a) 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20406080100120140160 0 1 2 3 4 5 t a =25 o c,v g =-10v 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc normalized transient thermal resistance
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% r ds(on) - on - resistance (m ? ) drain-source on resistance -i d - drain current (a) t j - junction temperature ( c) gate threshold voltage -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) normalized threshold voltage '(
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$"%& 012345678910 0 2 4 6 8 10 12 14 16 -5v -4v -3v v gs = -6,-7,-8,-9,-10v 0 2 4 6 8 10121416 0 30 60 90 120 150 180 210 240 v gs = -10v v gs = -4.5v 01234567 0 2 4 6 8 10 12 14 16 t j =-55 o c t j =125 o c t j =25 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 a
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- -v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) capacitance gate charge q g - gate charge (nc) -v gs - gate - source voltage (v) '(
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$"%& -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 v ds = -15v i d = -4a
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millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012)
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/ terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p )" (ir/convection or vpr reflow) "

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profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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+ t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles
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table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. "

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!$ " * , anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 ", '
application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 "
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+ $"%& a j b t2 t1 c application a b c j t1 t2 w p e 330 162 +1.5 12.75+ 0.15 2 0.5 12.4 0.2 2 0.2 12 0. 3 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop- 8 5.5 1 1.55 +0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0. 1 2.1 0.1 .3 0.013 (mm)

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