IRFPS3815 hexfet ? power mosfet the hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. s d g v dss = 150v r ds(on) = 0.015 ? i d = 105a description 3/14/01 www.irf.com 1 advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching fully avalanche rated super - 247? parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 105 i d @ t c = 100 c continuous drain current, v gs @ 10v 74 a i dm pulsed drain current 390 p d @t c = 25 c power dissipation 441 w linear derating factor 2.9 w/ c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 1610 mj i ar avalanche current 58 a e ar repetitive avalanche energy 38 mj dv/dt peak diode recovery dv/dt 3.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.34 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance pd - 93911
IRFPS3815 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.18 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.015 ? v gs = 10v, i d = 63a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = 10v, i d = 250a g fs forward transconductance 47 ??? ??? sv ds = 50v, i d = 58a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v q g total gate charge ??? 260 390 i d = 58a q gs gate-to-source charge ??? 53 80 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 150 230 v gs = 10v t d(on) turn-on delay time ??? 22 ??? v dd = 75v t r rise time ??? 130 ??? i d = 58a t d(off) turn-off delay time ??? 51 ??? r g = 1.03 ? t f fall time ??? 60 ??? v gs = 10v between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 6810 ??? v gs = 0v c oss output capacitance ??? 1570 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 480 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 9820 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 670 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 1270 ??? v gs = 0v, v ds = 0v to 120v nh electrical characteristics @ t j = 25 c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 5.0 13 i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 58a, di/dt 450a/s, v dd v (br)dss , t j 175 c notes: starting t j = 25 c, l = 0.96mh r g = 25 ? , i as = 58a. (see figure 12) pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 58a, v gs = 0v t rr reverse recovery time ??? 270 410 ns t j = 25 c, i f = 58a q rr reverse recoverycharge ??? 2990 4490 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 105 390 a c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss
IRFPS3815 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 97a 0.01 0.1 1 10 100 1000 0.1 1 10 100 50s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 50 s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 6 7 8 9 10 11 12 v = 50v 50 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
IRFPS3815 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 58a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds ( on ) sin g le pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRFPS3815 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response )
IRFPS3815 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 1000 2000 3000 4000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 24a 41a 58a
IRFPS3815 www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets
IRFPS3815 8 www.irf.com super - 247 ? package outline dimensions are shown in millimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01
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