2 C 50 ghz distributed amplifier technical data features ? frequency range: 2 C 50 ghz ? small signal gain: 8.5 db ?p -1db @ 40 ghz: 12 dbm ? noise figure: < 6 db @ 2 C 35 ghz < 10 db @ 35 C 50 ghz ? return loss: in/out: < -10 db description the HMMC-5025 was designed as a generic wide band distributed amplifier, covering the frequency span 2 C 50 ghz. it consists of seven stages. each stage is made up of two cascoded fets with gate peripheries of 48 mm per fet. both input and output ports were designed to provide 50 ohm terminations. bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 ghz by means of external circuit components. the HMMC-5025 is typically biased at v dd = 5 volts and i dd = 75 ma. the second gate is internally biased by means of a voltage divider network and an a.c. ground. chip size: 1720 x 920 m m (67.7 x 36.2 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 80 x 80 m m (3.2 x 3.2 mils) HMMC-5025 absolute maximum ratings [1] symbol parameters/conditions units min. max. v dd positive drain voltage v 7.0 i dd total drain current ma 170 v g1 first gate voltage v -3.5 0 v g2 second gate voltage ma -3.0 +3.0 p dc dc power dissipation watts 1.2 p in cw input power dbm 20 t ch operating channel temp. c +150 t case operating case temp. c -55 t stg storage temperature c -65 +165 t max maximum assembly temp. c +300 (for 60 seconds maximum) note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. t a = 25 c except for t ch , t stg , and t max .
2 HMMC-5025 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. i dss saturated drain current ma 130 150 170 (v dd = 5.0 v, v g1 = 0.0 v, v g2 = open circuit) v p first gate pinch-off voltage v -1.7 -0.5 (v dd = 5.0 v, i dd = 15 ma, v g2 = open circuit) v g2 second gate self-bias voltage v 2 (v dd = 5.0 v, i dd = 75 ma) i dsoff (v g1 ) first gate pinch-off current ma 6 10 (v dd = 5.0 v, v g1 = -3.5 v, v g2 = open circuit) i dsoff (v g2 ) second gate pinch-off current ma 10 (v dd = 5.0 v, i dd = 75 ma, v g2 = -3.5 v) q ch-bs thermal resistance (t backside = 25 c) c/w 63 note: 1. measured in wafer form with t chuck = 25 c. (except q ch-bs .) HMMC-5025 rf specifications [1] , v dd = 5.0 v, i dd (q) = 75 ma, z in = z o = 50 w symbol parameters and test conditions units min. typ. max. bw guaranteed bandwidth [2] ghz 2 50 s 21 small signal gain db 7.0 8.5 d s 21 small signal gain flatness db 0.75 1.5 rl in input return loss db 10 15 rl out output return loss db 10 15 s 12 reverse isolation db 20 30 p -1db output power @ 1db gain compression @ 40 ghz dbm 12 p sat saturated output power @ 40 ghz dbm 16 h 2 second harmonic power level (2 < ? o < 26) dbc -35 p o (? o ) = 10 dbm h 3 third harmonic power level (2 < ? o < 20) dbc -25 p o (? o ) = 10 dbm nf noise figure (2 C 35 ghz) db 5.0 noise figure (35 C 50 ghz) 7.0 notes: 1. small-signal data measured in wafer form with t chuck = 25 c. harmonic data measured on individual devices mounted in a microcircuit package at t a = 25 c. 2. performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
3 HMMC-5025 applications the HMMC-5025 traveling wave amplifier is designed for use as a general purpose wideband power stage in communication systems and microwave instrumentation. it is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 50 ghz frequency range. dynamic gain control and low-frequency extension capabilities are designed into these devices. biasing and operation these amplifiers are biased with a single positive drain supply (v dd ) and a single negative gate supply (v g1 ). the recommended bias conditions for best perfor- mance for the HMMC-5025 are v dd = 5.0 v, i dd = 75 ma. to achieve these drain current levels, v g1 is typically biased between -0.2v and -0.6 v. no other bias supplies or connections to the device are required for 2 to 50 ghz operation. the gate voltage (v g1 ) should be applied prior to the drain voltage (v dd ) during power up and removed after the drain voltage during power down. the auxiliary gate and drain contacts are used only for low- frequency performance extension below ? 1.0 ghz. when used, these contacts must be ac coupled only. (do not attempt to apply bias to these pads.) the second gate (v g2 ) can be used to obtain 30 db (typical) dynamic gain control. for normal operation, no external bias is required on this contact. assembly techniques solder die-attach using a fluxless ausu solder preform is the recommended assembly method. gold thermosonic wedge bonding with 0.7 mil diameter au wire is recommended for all bonds. tool force should be 22 1 gram, stage temperature should be 150 2 c, and ultrasonic power and dura- tion should be 64 1 db and 76 8 msec, respectively. the bonding pad and chip backside metallization is gold. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. figure 1. HMMC-5025 schematic. gate bias low frequency extension second gate bias rf output low frequency extension 15 15 1.5 470 8.5 rf input gnd 340 50 350 9.2 50 8.5 6 drain bias seven identical stages
4 figure 2. HMMC-5025 bond pad locations. v dd (aux v dd pad) (aux gate and aux 2nd gate) (v dd ) (v g1 ) (rf input) (gnd pad) aux. drain rf input 98 0 314 chip id no. aux. gate bias aux. 2nd gate bias v g1 rf output 844 234 0 920 ( 10 m) 90 2910 (rf output) 1720 ( 10 m) 258 668 114 280 1160 1630
5 figure 3. HMMC-5025 assembly diagram. HMMC-5025 typical performance figure 4. typical gain and reverse isolation vs. frequency. 12 10 8 6 4 2 10 20 30 40 50 60 small-signal gain (db) reverse isolation (db) 2 2 6 10 14 18 22 26 30 34 38 42 46 50 frequency (ghz) v dd = 5.0 v, i dd = 75 ma [1] gain isolation figure 5. typical input and output return loss vs. frequency. 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 input return loss (db) output return loss (db) 2 2 6 10 14 18 22 26 30 34 38 42 46 50 frequency (ghz) v dd = 5.0 v, i dd = 75 ma [1] input output note: 1. data obtained from on-wafer measurements. t chuck = 25 c.
6 HMMC-5025 typical scattering parameters [1] , (t chuck = 25 c, v dd = 5.0 v, i dd = 75 ma, z in = z o = 50 w freq. s 11 s 21 s 12 s 22 ghz db mag ang db mag ang db mag ang db mag ang 2 -24.6 0.059 -150.2 -52.0 0.0025 -110.2 8.5 2.660 147.8 -26.1 0.049 -64.0 3 -29.7 0.033 147.5 -49.1 0.0035 -130.2 8.4 2.630 139.6 -33.8 0.020 -23.6 4 -28.9 0.036 89.0 -47.1 0.0044 -146.4 8.4 2.630 129.8 -30.1 0.031 43.9 5 -27.0 0.045 56.2 -45.5 0.0053 -161.6 8.4 2.629 119.5 -24.6 0.059 55.9 6 -25.8 0.052 32.6 -44.2 0.0061 -176.8 8.4 2.643 108.9 -20.8 0.091 52.1 7 -25.2 0.055 12.7 -43.3 0.0068 169.3 8.5 2.668 98.1 -18.4 0.121 43.8 8 -25.4 0.054 -6.3 -42.6 0.0074 155.6 8.6 2.705 86.9 -16.7 0.147 33.4 9 -26.0 0.050 -25.3 -42.1 0.0078 143.8 8.8 2.743 75.5 -15.6 0.166 22.3 10 -27.4 0.043 -46.3 -41.7 0.0083 132.1 8.9 2.787 63.7 -15.0 0.178 10.7 11 -29.4 0.034 -70.4 -41.4 0.0085 121.9 9.0 2.823 51.6 -14.8 0.182 -0.9 12 -31.7 0.026 -102.9 -40.9 0.0090 112.3 9.1 2.853 39.3 -14.9 0.179 -12.6 13 -33.0 0.022 -145.8 -40.7 0.0093 104.5 9.2 2.874 26.9 -15.4 0.169 -24.2 14 -31.4 0.027 168.6 -40.3 0.0097 95.4 9.2 2.891 14.3 -16.3 0.153 -35.7 15 -29.1 0.035 136.8 -39.7 0.0104 88.5 9.2 2.891 1.8 -17.6 0.131 -47.3 16 -27.0 0.045 113.4 -39.0 0.0112 80.5 9.2 2.884 -10.8 -19.5 0.106 -59.3 17 -25.4 0.053 95.4 -38.4 0.0120 71.9 9.2 2.870 -23.3 -22.2 0.077 -72.0 18 -24.5 0.060 77.9 -37.7 0.0131 62.9 9.1 2.853 -35.7 -26.7 0.046 -86.1 19 -24.1 0.062 62.1 -37.1 0.0140 53.8 9.1 2.836 -48.1 -35.6 0.017 -114.9 20 -24.4 0.061 48.2 -36.3 0.0153 44.3 9.0 2.819 -60.3 -35.3 0.017 107.2 21 -25.0 0.056 37.0 -35.3 0.0172 32.7 9.0 2.806 -72.6 -27.0 0.045 80.0 22 -25.6 0.052 22.6 -35.1 0.0176 19.5 8.9 2.798 -84.7 -23.2 0.069 66.2 23 -27.7 0.041 7.2 -34.7 0.0184 8.9 8.9 2.796 -97.1 -21.0 0.089 54.9 24 -30.9 0.028 -8.2 -34.4 0.0191 -2.8 8.9 2.789 -109.5 -19.4 0.107 44.2 25 -38.4 0.012 -39.5 -34.3 0.0194 -14.7 8.9 2.789 -121.9 -18.6 0.118 33.6 26 -40.1 0.010 -169.3 -33.9 0.0202 -25.3 8.9 2.789 -134.5 -18.2 0.124 24.2 27 -30.9 0.029 156.0 -33.7 0.0206 -37.0 8.9 2.794 -147.2 -18.2 0.124 15.5 28 -26.0 0.050 138.6 -33.7 0.0206 -48.5 8.9 2.795 -160.1 -18.4 0.120 7.7 29 -23.1 0.070 122.8 -33.4 0.0213 -58.3 8.9 2.787 -173.1 -18.8 0.115 2.1 30 -21.0 0.089 110.2 -33.3 0.0216 -71.3 8.9 2.780 174.0 -19.6 0.105 -3.4 31 -19.8 0.102 95.3 -32.9 0.0228 -81.1 8.9 2.772 160.9 -20.5 0.095 -7.5 32 -18.9 0.114 82.3 -32.5 0.0236 -93.6 8.8 2.768 147.8 -21.3 0.086 -9.1 33 -18.6 0.117 70.4 -32.3 0.0244 -105.4 8.8 2.762 134.5 -22.4 0.076 -6.4 34 -18.5 0.118 58.6 -32.3 0.0244 -120.3 8.8 2.752 121.2 -23.0 0.071 -4.7 35 -19.0 0.112 46.2 -31.9 0.0254 -132.8 8.8 2.747 107.8 -23.5 0.067 -3.5 36 -20.0 0.100 35.6 -31.6 0.0264 -146.2 8.8 2.741 94.4 -23.7 0.066 -2.5 37 -21.5 0.084 26.4 -31.5 0.0266 -161.5 8.7 2.735 80.7 -24.4 0.060 -4.3 38 -24.0 0.063 18.8 -31.5 0.0267 -175.1 8.7 2.728 67.0 -25.4 0.054 -8.9 39 -27.6 0.042 18.9 -31.5 0.0266 171.1 8.7 2.723 53.0 -27.1 0.044 -11.8 40 -32.9 0.023 46.7 -31.4 0.0270 157.6 8.7 2.711 39.0 -30.4 0.030 -9.1 41 -30.3 0.031 99.2 -31.2 0.0276 140.9 8.6 2.703 24.8 -38.1 0.012 18.9 42 -25.5 0.053 107.1 -31.0 0.0282 125.0 8.6 2.695 10.5 -32.6 0.023 93.1 43 -22.2 0.078 102.7 -31.4 0.0270 115.6 8.6 2.689 -4.0 -26.2 0.049 94.9 44 -20.1 0.099 94.4 -31.1 0.0280 101.4 8.6 2.679 -18.1 -22.4 0.076 86.4 45 -19.0 0.112 85.3 -31.3 0.0272 87.2 8.5 2.672 -33.4 -20.2 0.098 75.3 46 -18.6 0.117 76.5 -30.5 0.0297 72.1 8.5 2.676 -48.5 -18.8 0.115 61.6 47 -18.3 0.121 69.8 -30.6 0.0297 49.9 8.6 2.686 -64.0 -18.0 0.126 48.2 48 -18.8 0.115 62.5 -30.7 0.0293 37.8 8.6 2.689 -79.8 -18.3 0.122 28.8 49 -19.3 0.108 59.9 -30.5 0.0300 20.0 8.6 2.691 -96.1 -19.5 0.106 6.1 50 -20.3 0.096 58.9 -30.3 0.0307 2.7 8.6 2.677 -293.0 -21.7 0.082 -22.7 note: 1. data obtained from on-wafer measurements.
7 HMMC-5025 typical performance 2 6 10 22 14 18 30 34 38 26 50 46 42 2 6 10 22 14 18 30 34 38 26 50 46 42 frequency (ghz) v dd = 5.0 v, i dd [ @t a = 25 c] = 75 ma figure 6. typical small-signal gain vs. temperature. 13 12 11 10 9 8 7 6 5 4 3 small-signal gain, s 21 (db) t a ?5 c ?5 c 0 c +25 c +55 c +85 c +100 c .019 db/ c .029 db/ c .039 db/ c frequency (ghz) v dd = 5.0 v, v g1 @ 0.66 v figure 7. typical gain vs. second gate control voltage. 20 10 0 ?0 ?0 ?0 small-signal gain, s 21 (db) v g2 = +2.0 v, i dd = 75 ma v g2 = ?.0 v, i dd = 59 ma v g2 = ?.5 v, i dd = 47 ma v g2 = 2.0 v, i dd = 34 ma v g2 = 2.5 v, i dd = 24 ma v g2 = 3.0 v, i dd = 16 ma figure 8. typical 1 db gain compression and saturated output power vs. frequency. 18 16 14 12 10 8 6 4 output power (dbm) 2 2 6 10 14 18 22 26 30 34 38 42 46 50 frequency (ghz) v dd = 5.0 v, i dd (q) = 75 ma p sat p ?db figure 9. typical second and third harmonics vs. fundamental frequency at p out = 10 dbm. ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 ?5 ?0 harmonics (dbc) 2 2 3 4 5 6 7 8 9 10 11 12 13 14 fundamental frequency, fo (ghz) v dd = 5.0 v, i dd (q) = 75 ma 3rd harmonic 2nd harmonic figure 10. typical noise figure performance. 6 5 4 3 2 1 13 11 9 7 5 noise figure (db) associated gain (db) 246 12 810 161820 14 26.5 24 22 frequency (ghz) nominal bias: v dd = 5.0 v, i dd = 75 ma optimal nf bias: v dd = 2.25 v, i dd = 26 ma note: 1. all data measured on individual devices mounted in an hp83040 series modular microcircuit package @ t a = 25 c (except where noted).
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-5446e (11/99)
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