description: the central semiconductor CMLT2222A type is a dual npn small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. marking code is l22. maximum ratings: (t a =25 o c) symbol units collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 o c thermal resistance ja 357 o c/w electrical characteristics per transistor: (t a =25 o c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 10 na i cbo v cb =60v, t a =125 o c10 a i cev v ce =60v, v eb =3.0v 10 na i ebo v eb =3.0v 10 na bv cbo i c =10 a75 v bv ceo i c =10ma 40 v bv ebo i e =10 a 6.0 v v ce(sat) i c =150ma, i b =15ma 0.3 v v ce(sat) i c =500ma, i b =50ma 1.0 v v be(sat) i c =150ma, i b =15ma 0.6 1.2 v v be(sat) i c =500ma, i b =50ma 2.0 v h fe v ce =10v, i c =0.1ma 35 h fe v ce =10v, i c =1.0ma 50 h fe v ce =10v, i c =10ma 75 h fe v ce =1.0v, i c =150ma 50 h fe v ce =10v, i c =150ma 100 300 h fe vce=10v, ic=500ma 40 CMLT2222A surface mount dual npn small signal switching transistors sot-563 case central semiconductor corp. tm r0 (21-february 2002)
central semiconductor corp. tm sot-563 case - mechanical outline CMLT2222A surface mount dual npn small signal switching transistors a b c h g f d e e r0 12 3 65 4 r0 (21-february 2002) marking code: l22 electrical characteristics per transistor continued: (t a =25 o c unless otherwise noted) symbol test conditions min max units f t v ce =20v, i c =20ma, f=100mhz 300 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 25 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 2.0 8.0 k ? h ie v ce =10v, i c =10ma, f=1.0khz 0.25 1.25 k ? h re v ce =10v, i c =1.0ma, f=1.0khz 8.0 x10 -4 h re v ce =10v, i c =10ma, f=1.0khz 4.0 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 50 300 h fe v ce =10v, i c =10ma, f=1.0khz 75 375 h oe v ce =10v, i c =1.0ma, f=1.0khz 5.0 35 mhos h oe v ce =10v, i c =10ma, f=1.0khz 25 200 mhos rb'c c v cb =10v, i e =20ma, f=31.8mhz 150 ps nf v ce =10v, i c =100ma, r s =1.0k ? , f=1.0khz 4.0 db t d v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 10 ns t r v cc =30v, v be =0.5, i c =150ma, i b1 =15ma 25 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma 225 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma 60 ns lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1
|
