philips semiconductors product specification thyristors bt145b series general description quick reference data glass passivated thyristors in a plastic symbol parameter max. max. max. unit envelope, suitable for surface mounting, intended for use in bt145b- 500r 600r 800r applications requiring high v drm , repetitive peak off-state 500 600 800 v bidirectional blocking voltage v rrm voltages capability and high thermal cycling i t(av) average on-state current 16 16 16 a performance. typical applications i t(rms) rms on-state current 25 25 25 a include motor control, industrial and i tsm non-repetitive peak on-state 300 300 300 a domestic lighting, heating and static current switching. pinning - sot404 pin configuration symbol pin description 1 cathode 2 anode 3 gate mb anode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500r -600r -800r v drm , v rrm repetitive peak off-state - 500 1 600 1 800 v voltages i t(av) average on-state current half sine wave; t mb 101 ?c - 16 a i t(rms) rms on-state current all conduction angles - 25 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 300 a t = 8.3 ms - 330 a i 2 ti 2 t for fusing t = 10 ms - 450 a 2 s di t /dt repetitive rate of rise of i tm = 50 a; i g = 0.2 a; - 200 a/ m s on-state current after di g /dt = 0.2 a/ m s triggering i gm peak gate current - 5 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 20 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature 13 mb 2 ak g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ m s. may 1997 1 rev 1.000
philips semiconductors product specification thyristors bt145b series thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 1.0 k/w junction to mounting base r th j-a thermal resistance minimum footprint, fr4 board - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 5 35 ma i l latching current v d = 12 v; i gt = 0.1 a - 25 80 ma i h holding current v d = 12 v; i gt = 0.1 a - 20 60 ma v t on-state voltage i t = 30 a - 1.1 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.6 1.0 v v d = v drm(max) ; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.2 1.0 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 200 500 - v/ m s off-state voltage exponential waveform; gate open circuit t gt gate controlled turn-on i tm = 40 a; v d = v drm(max) ; i g = 0.1 a; - 2 - m s time di g /dt = 5 a/ m s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 70 - m s turn-off time i tm = 50 a; v r = 25 v; di tm /dt = 30 a/ m s; dv d /dt = 50 v/ m s may 1997 2 rev 1.000
philips semiconductors product specification thyristors bt145b series fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 101?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 20 0 5 10 15 20 25 a = 1.57 1.9 2.2 2.8 4 bt145 if(av) / a ptot / w tmb(max) / c 125 120 115 110 105 100 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a 1 10 100 1000 0 50 100 150 200 250 300 350 bt145 number of half cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 1000 10000 bt145 itsm / a 10us 100us 1ms 10ms 100 t / s t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 10 20 30 40 50 bt145 surge duration / s it(rms) / a -50 0 50 100 150 0 5 10 15 20 25 30 bt145 tmb / c it(rms) / a 101 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) may 1997 3 rev 1.000
philips semiconductors product specification thyristors bt145b series fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 10 20 30 40 50 typ max bt145 vt / v it / a tj = 125 c tj = 25 c vo = 1.045 v rs = 0.011 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 bt145 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c ih(tj) ih(25 c) 0 50 100 150 10 100 1000 10000 tj / c dvd/dt (v/us) gate open circuit may 1997 4 rev 1.000
philips semiconductors product specification thyristors bt145b series mechanical data dimensions in mm net mass: 1.4 g fig.13. sot404 : centre pin connected to mounting base. notes 1. epoxy meets ul94 v0 at 1/8". mounting instructions dimensions in mm fig.14. sot404 : minimum pad sizes for surface mounting . notes 1. plastic meets ul94 v0 at 1/8". 11 max 4.5 max 1.4 max 10.3 max 0.5 15.4 2.5 0.85 max (x2) 2.54 (x2) 17.5 11.5 9.0 5.08 3.8 2.0 may 1997 5 rev 1.000
philips semiconductors product specification thyristors bt145b series definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1998 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. may 1997 6 rev 1.000
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