description the alcatel 1945 lmm contains a state-of-the-art high performance dfb laser chip integrated with an electro-absorption modulator (ea-ilm) and is designed for 10gb/s long haul dwdm digital transmission systems on (up to 90km distance on smf). this module is designed for dwdm applications with a spacing between the channels down to 50 ghz without using external locker. the module integrates a wavelength monitoring function in order to allow wavelength stabilization over product lifetime. despite of this new feature, the package and the pinout of the new product stays compatible with the previous series , alcatel 1915 lmm, without the integrated wavelength monitoring function, in order to avoid a complete redesign of existing boards. the choice of an analog output for the control signal will leave the freedom for the user to lock the wavelength either with a digital or an analog circuit. the module incorporates also a thermoelectric cooler, precision thermistor, and optical isolator for stable operation under all conditions. features ? integrated fabry-perot etalon wavelength monitoring (replaces external lockers) ? 50 ghz spacing itu-t channels ? ingaasp monolithically integrated dfb laser and modulator chip (ea-ilm) ? low drive voltage ( 2v pp ) ? very low power penalty over 90 km of standard fiber for 10gb/s operation ? internal optical isolator ? internal tec and power monitoring photodiode ? high frequency industry-standard 7-pin butterfly package with 50 ? rf input and either k or gpo rf connector. applications ? stm-64 and oc-192 long reach dwdm transmission system ? terminals for submarine dwdm transmission systems a lcatel 1945 lmm 10 gb/s ea-ilm laser module w ith integrated wavelength monitoring
electro-optic characteristics parameter symb. conditions min max units laser threshold current (bol) i th cw, v bias = 0v 5 35 ma operating current (bol) i op cw, v bias = 0v 60 80 ma laser forward voltage v f cw, i op , v bias = 0v 2 v optical output power p ave i op , v mod , (1) -5 dbm laser chip temperature range for wavelength tunability t see (3) 15 30 c side mode suppression ratio smsr 35 db dispersion penalty ds see (1), (2) 2 db dynamic extinction ratio der see note 1 10 db modulator bias voltage v bias see (1) -2 0 v modulator drive voltage v mod see (1) 2 v cut-off frequency s 21 @-3 db, v bias = -1v, 50 ? 10 ghz rf return loss s 11 v bias = -1v, dc to 7ghz 10 db rise time / fall time t r /t f (1), (2), 10%,90% 45 ps thermistor resistance r th t s = 25c 9.5 10.5 k ? tec current (eol) i t i op =100ma, ? t=45c, t c =65c, v bias = -1v 1.3 a tec voltage (eol) v t i op =100ma, ? t=45c, t c =65c, v bias = -1v 2.5 v tracking error tr ts=25c, tc=65c, i op =100ma, tr=10log[p(65c)/p(25c)] -0.5 +0.5 db notes: all limits start of life, tcase=25c, tsubmount=15 to 30c, vr=-5v, unless otherwise stated. (1) ber = 10 -10 ; 9.953 gbit/s modulation; 2 23 - 1 prbs; nrz line code; der 10 db, p ave (2) 1600 ps/nm dispersion assuming fiber with an average dispersion of 18 ps/nm/km optical power in the fiber shall not exceed the linear transmission regime. (3) tchip = t . t is chip temperature required to meet target wavelength wavelength monitoring section two photodiodes are used to ensure both optical power monitoring and wavelength monitoring. the first one (power monitoring) is referenced as monitoring photodiode (pd mon ) whereas the second one (wavelength monitoring) is referenced as filter photodiode (pd filt ). symb. min max unit power monitoring photodiode current i pdmon 20 a filter monitoring photodiode i pdfilt 20 a photodiodes dark current i dark 0.1 a center wavelength c itu grid wavelength stability over lifetime ? c -2.5 +2.5 ghz wavelength capture range cr 90 ghz filter slope (normalized to maximum pd filt current) fs 2 10 nm -1 electrical responsivity ratio between power monitoring channel and filter monitoring channel ert 6 db
absolute maximum ratings exposing the device to stresses above those listed in absolute maximum rating could cause permanent damage. exposure to absolute maximum rating conditions for extended periods may affect device reliability. environmental parameter min max unit storage temperature -40 70 c operating temperature 0 65 c lead soldering time (260c) 10 s axial force on fiber ( 10 seconds max.) 5 n fiber bend radius 30 mm tec voltage 2.8 v tec current 1.4 a esd (1) applied on laser 2000 v esd (1) on modulator 500 v (1) human body model electro-optic parameter min max unit laser forward current 150 ma laser reverse voltage 2 v modulator forward voltage 1 v modulator reverse voltage 5 v photodiode reverse voltage 20 v photodiode forward current 1 ma mechanical details (in mm)
pin allocation pin description 1 monitoring pd anode (-) 2thermistor 3 laser dc bias (+) 4 power monitoring pd anode (-) 5 common power monitoring and monitoring pd cathode (+) 6 te cooler (+) 7 te cooler (-) 8 ea modulator cathode case ground modulator anode/thermistor standards itu-t g.652 optical fiber iec 68-2 and mil std 883 environment laser radiation avoid exposure to beam class 3 b laser product attention observe precautions for handling electrostatic discharge sensitive devices june 2001 copyright ? 2000 alcatel optronics customized versions are available for large quantities. performance figures contained in this document must be specifically confirmed in writing by alcatel optronics before they become applicable to any particular order or contract. alcatel optronics reserves the right to make changes to the products or information contained herein without notice. a printed version of this document is an uncontrolled copy. europe route de villejust f-91625 nozay cedex tel : (+33) 1 64 49 49 10 fax : (+33) 1 64 49 49 61 usa 15036 conference center drive chantilly - va 20151 tel : (+1) 703 679 3600 fax : (+1) 703 679 6667 canada 45, de villebois, suite 200 gatineau (pq) canada, j8t 8j7 tel : (+1) 819 243 3755 fax : (+1) 819 243 3354 japan yebisu garden place tower po box 5024 20-3, ebisu 4 - chome shibuya - ku tokyo 150 - 6028 tel : (+81) 3 5424 85 65 fax : (+81) 3 5424 85 81
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