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CHA5056-QGG rohs compliant ref. : dscha5056qgg7033 - 02 feb 07 1/12 /specific ations subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 17-27ghz high power amplifier gaas monolithic microwave ic in smd leadless packag e description the CHA5056-QGG is a three-stage monolithic high power amplifier. the circuit is manufactured with a power p- hemt process, 0.15m gate length, via holes through the substrate. it is supplied in rohs compliant smd package main features broadband performance 17-27ghz 28.5dbm output power @1db compression 38dbm 3 rd order intercept point high gain: 19db esd protected (see page 6) dc power consumption, 890ma @ 4.5v 28lqfn5x5 typical on board measurements main characteristics tamb = +25c, vd1=vd2=vd3= +4.5v, id (quiescent)=89 0ma symbol parameter min typ max unit f_op operating frequency range 17 27 ghz p_1db output power at 1db compression 28.5 dbm g_lin linear gain 19 db esd protections: electrostatic discharge sensitive device observe handling precautions ! glin & p1db & psat versus frequency 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 16 17 18 19 20 21 22 23 24 25 26 27 freq (ghz) gain linear (db) p1db (dbm) psat (dbm)
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 2/12 /specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb = +25c, cw biasing mode these values are representative of onboard measurem ents as defined on the drawing 96402. symbol parameter min typ max unit fop operating frequency range 17 27 ghz g_lin linear gain from 17 to 24ghz from 24.5 to 26.5ghz 18 20 db db p1db output power at 1db gain compression 28.5 db m psat saturated output power 29.5 dbm oip3 output 3 rd order intercept point @ id=890ma output 3 rd order intercept point @ id=700ma 37 38 dbm dbm is11i input return loss 2.0:1 db is22i output return loss 2.2:1 db id quiescent drain current (1) 890 ma id_1dbc drain current @1db gain compression 1 a vd 1,2,3 positive drain bias voltage 4.5 v vg negative gate bias voltage -2.2 v (1) this parameter is fixed by gate voltage vg absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage 5 v id drain bias current with vd=4.5v small signal 110 0 ma vg gate bias voltage -4 to +0.8 v pin rf input power 15 dbm tj junction temperature (2) 175 c top operating temperature range -40 to +80 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage. (2) thermal resistance channel to ground paddle =20. 5c/w for tground paddle. = +80c with 4.5v, 890ma
17-27ghz high power amplifier CHA5056-QGG ref. : dscha5056qgg7033 - 02 feb 07 3/12 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parameters tamb = +25c, vd1=vd2=vd3= +4.5v, id = 890ma refer to the definition of the sij reference plane s section below freq (ghz) db (s11) p (s11) () db (s21) p (s21) () db (s12) p (s12) () db (s22) p (s22) () 1,0 -0,6 155 -46,8 -20 -90,8 66 -0,4 154 2,0 -0,5 130 -51,8 -85 -70,3 -66 -0,6 129 3,0 -0,6 106 -55,9 -136 -67,7 -35 -0,7 102 4,0 -0,7 81 -52,6 71 -67,4 -6 -0,7 74 5,0 -0,8 55 -51,5 9 -79,3 -9 -0,9 45 6,0 -1,0 30 -49,3 -81 -71,3 -166 -1,0 14 7,0 -1,2 3 -50,5 52 -70,7 -148 -1,1 -21 8,0 -1,4 -24 -29,8 -33 -61,6 32 -1,3 -62 9,0 -1,7 -50 -18,3 -131 -61,3 -60 -1,8 -112 10,0 -1,8 -77 -11,5 134 -55,1 -158 -3,0 -175 11,0 -2,0 -107 -6,3 46 -57,0 158 -5,4 111 12,0 -2,2 -136 -1,9 -36 -60,8 124 -8,9 31 13,0 -2,6 -166 2,3 -113 -56,3 129 -11,9 -43 14,0 -3,5 162 7,2 172 -48,8 86 -13,6 -96 15,0 -5,4 128 12,7 86 -49,0 31 -17,3 -118 16,0 -9,1 92 16,9 -12 -50,5 0 -14,3 -108 17,0 -14,5 50 18,6 -114 -51,8 -37 -11,0 -140 18,0 -19,7 -41 18,5 150 -61,6 45 -10,2 -167 19,0 -15,2 -114 17,9 62 -54,6 7 -10,2 165 20,0 -11,8 -147 17,3 -20 -53,3 -24 -11,5 141 21,0 -9,4 180 17,0 -100 -59,8 -51 -13,7 114 22,0 -9,1 149 17,4 180 -56,6 -1 -18,6 83 23,0 -9,7 111 18,3 95 -62,3 112 -29,9 14 24,0 -12,1 62 19,6 0 -51,6 31 -24,4 -131 25,0 -19,3 -15 20,9 -110 -46,2 9 -17,4 -154 26,0 -20,4 178 19,5 121 -46,9 -7 -14,4 179 27,0 -13,6 77 15,1 -13 -42,3 -18 -13,1 130 28,0 -8,3 0 5,6 -168 -40,8 -38 -11,9 14 29,0 -5,9 -55 -11,8 70 -38,1 -47 -8,4 -79 30,0 -4,1 -97 -27,1 -46 -33,5 -74 -5,7 -127 31,0 -3,1 -132 -29,8 -123 -31,4 -122 -4,1 -162 32,0 -2,3 -160 -31,5 -171 -33,1 -171 -3,5 173 33,0 -1,9 175 -36,1 148 -37,5 162 -3,1 148 34,0 -1,6 152 -42,3 143 -40,3 153 -3,4 126 35,0 -1,4 134 -49,3 165 -41,2 153 -6,2 96 36,0 -1,2 118 -44,1 151 -40,5 136 -9,1 159 37,0 -1,1 103 -43,8 129 -44,1 85 -2,4 134 38,0 -1,0 90 -43,7 102 -48,9 87 -0,8 112 39,0 -1,0 75 -43,9 24 -53,0 114 -0,6 96 40,0 -1,5 60 -46,6 -161 -50,1 112 -0,1 82
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 4/12 /specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 tamb = +25c, vd1=vd2=vd3= +4.5v, id = 700ma refer to the definition of the sij reference plane s section below freq (ghz) db (s11) p (s11) () db (s21) p (s21) () db (s12) p (s12) () db (s22) p (s22) () 1 -0,6 155 -48,5 -19 -83,8 -103 -0,4 154 2 -0,5 130 -50,6 -85 -69,9 -77 -0,6 129 3 -0,6 106 -59,4 -155 -66,8 -28 -0,7 102 4 -0,7 81 -54,7 106 -66,3 4 -0,7 75 5 -0,8 55 -51,0 4 -75,4 -2 -0,9 45 6 -1,0 30 -50,9 -87 -71,1 -176 -1,0 14 7 -1,1 4 -53,6 26 -69,8 -144 -1,1 -21 8 -1,4 -23 -30,2 -34 -61,0 36 -1,3 -62 9 -1,6 -50 -18,8 -132 -60,1 -66 -1,8 -111 10 -1,8 -77 -11,9 132 -55,3 -156 -3,0 -174 11 -2,0 -107 -6,8 45 -56,7 162 -5,3 113 12 -2,2 -136 -2,4 -37 -61,9 123 -8,7 34 13 -2,5 -166 1,7 -115 -57,4 133 -11,8 -38 14 -3,4 162 6,4 170 -49,0 84 -13,3 -90 15 -5,3 128 11,7 85 -49,5 35 -16,0 -114 16 -8,9 92 15,9 -12 -50,3 2 -13,5 -110 17 -14,3 48 17,7 -114 -51,7 -36 -10,4 -141 18 -19,4 -41 17,6 151 -63,7 37 -9,7 -171 19 -15,1 -114 17,0 63 -55,0 6 -10,1 161 20 -11,8 -147 16,4 -19 -53,1 -22 -11,8 136 21 -9,5 -179 16,1 -99 -59,2 -55 -14,5 108 22 -9,0 151 16,4 -179 -56,7 -7 -20,8 76 23 -9,5 113 17,3 97 -62,7 102 -34,0 -44 24 -11,8 65 18,6 3 -52,0 31 -22,0 -143 25 -18,3 -10 20,0 -107 -45,7 7 -16,9 -160 26 -20,9 -178 18,6 123 -46,5 -8 -13,9 173 27 -13,9 78 14,1 -10 -42,4 -17 -12,6 123 28 -8,4 2 4,5 -162 -40,9 -37 -11,0 12 29 -5,9 -54 -12,8 77 -38,1 -47 -7,9 -78 30 -4,1 -96 -28,0 -43 -33,5 -75 -5,4 -127 31 -3,1 -131 -30,5 -122 -31,5 -123 -3,9 -162 32 -2,3 -160 -32,1 -171 -33,2 -172 -3,4 172 33 -1,8 175 -35,3 145 -37,5 162 -3,0 148 34 -1,6 153 -39,2 130 -40,2 155 -3,3 125 35 -1,4 134 -44,2 172 -41,1 153 -6,2 95 36 -1,2 118 -43,7 150 -40,8 138 -9,3 161 37 -1,0 103 -47,4 160 -43,5 90 -2,4 134 38 -1,0 90 -40,6 83 -49,6 84 -0,8 112 39 -1,0 75 -52,6 28 -51,7 97 -0,6 97 40 -1,5 60 -43,9 -133 -51,7 115 -0,1 82
17-27ghz high power amplifier CHA5056-QGG ref. : dscha5056qgg7033 - 02 feb 07 5/12 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured performance tamb = +25c, vd1=vd2=vd3= +4.5v, id =890ma, cw bia sing mode measurements in the package access planes, using th e proposed land pattern & board 96402 output power@ 1db compression & linear gain versus frequency 14 16 18 20 22 24 26 28 30 32 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) t=-40c t=25c t=75c t=-40c t=25c t=75c linear gain (db) p1db (dbm) return losses versus frequency@ 25c s11 s22
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 6/12 /specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 drain current versus input power@ 17ghz 800 820 840 860 880 900 920 940 960 980 1000 1020 1040 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 input power (dbm) drain current (ma) t=-40c t=25c t=75c c/i3 versus pout dcl at temperature C40, +25, +75c & id=890ma frequency 17,18,19,20ghz frequency 21,22,23 ghz
17-27ghz high power amplifier CHA5056-QGG ref. : dscha5056qgg7033 - 02 feb 07 7/12 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 frequency 24, 25, 26 ghz c/i3 versus pout dcl at temperature C40, +25, +75c & id=700ma
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 8/12 /specifica tions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 frequency 17,18,19,20ghz frequency 21,22,23ghz
17-27ghz high power amplifier CHA5056-QGG ref. : dscha5056qgg7033 - 02 feb 07 9/12 specificat ions subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 frequency 24, 25, 26ghz output power@ 1db compression & linear gain versus frequency at 700ma 14 16 18 20 22 24 26 28 30 32 16 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) t=-40c t=25c t=75c t=-40c t=25c t=75c linear gain (db) p-1db (dbm)
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 10/12 /specific ations subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 note note note note due to esd protection, rfin and rfout are dc ground ed, an external capacitance might be requested to isolate the product from exte rnal voltage that could be present on the rf accesses. esd protections are also implemented on gate access es. the dc connections does not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling on the pc board, as close as possible to the package. definition of the sij reference planes the reference planes are defined from the footprint of the recommended characterization board shown below under the number 96402. the reference is the symmetrical axis of the package. the input and output reference planes are located at 3.66mm offset (input wise and output wise respec.) from this axis. then, the given sij incorporates this land pattern. 28 vd1 5 rfin 17 rfout vg1, 2 9 vg3 11 26 vd2 23 vd3 vd3 13
CHA5056-QGG rohs compliant ref. : dscha5056qgg7033 - 02 feb 07 11/12 /specifi cations subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 package outline smd mounting procedure the smd leadless package has been designed for high volume surface mount pcb assembly process. the dimensions and footprint required for the pcb (motherboard) are given in the drawings above. for the mounting process standard techniques involv ing solder paste and a suitable reflow process can be used. for further details, see application n ote an0017.
CHA5056-QGG 17-27ghz high power amplifier ref. : dscha5056qgg7033 - 02 feb 07 12/12 /specific ations subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 proposed assembly board 96402 for the 28l-qfn5x5 products characterization. - compatible with the proposed footprint. - based on typically ro4003 / 8mils or equivalent. - using a microstrip to coplanar transition to access the package. - recommended for the implementation of this product on a module board. ordering information qfn 5x5 rohs compliant package: CHA5056-QGG/xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its u se. no license is granted by implication or otherwi se under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are s ubject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s. metallised pads for tuning via holes f 0.3

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