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revisions ltr description date (yr - mo - da) approved a add case outlines 5, 6, 7 and 8. - tmh 00 - 06 - 08 monica l. poelking b add device types 09 ? 15. - tmh 00 - 07 - 26 thomas m. hess c add die requirements and appendix a. ? tmh 00 - 09 - 01 monica l. poelking d change dimensions for case outline 8. boileplate update. phn 01 - 08 - 14 thomas m. hess e add device types 16 - 29. - phn 02 - 03 - 08 thomas m. hess rev e e e e e e e sheet 95 96 97 98 99 100 101 rev e e e e e e e e e e e e e e e e e e e e sheet 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 rev e e e e e e e e e e e e e e e e e e e e sheet 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 rev e e e e e e e e e e e e e e e e e e e e sheet 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 rev a a a a a a d d d d e e e e e e e e e e sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 rev status rev e e e e a d a a a a a a a a of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by thomas m. hess defense supply center columbus standard microcircuit drawing checked by thomas m. hess columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by monica l. poelking and agencies of the department of defense drawing approval date 00 - 04 - 04 microcircuit, digital, cmos, mg2, gate array, monolithic silicon amsc n/ a revision level e size a cage code 67268 5962 - 00b02 sheet 1 of 101 dscc form 2233 apr 97 5962 - e268 - 02 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 2 dscc form 2234 apr 97 1. scope 1 .1 scope . this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part o r identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 - 00b02 01 q x c | | | | | | | | | | | | | | | | | | federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \ / drawing number 1.2.1 rha designator . device classes q and v r ha marked devices meet the mil - prf - 38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil - prf - 38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash ( - ) indicates a non - rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 mg2044e 44,000 mg2rt gates available 02 mg2091e 91,000 mg2rt ga tes available 03 mg2140e 140,000 mg2rt gates available 04 mg2194e 194,000 mg2rt gates available 05 mg2265e 265,000 mg2rt gates available 06 mg2360e 360,000 mg2rt gates available 07 mg2480e 480,000 mg2rt gates available 08 mg2700e 700,000 mg2rt gates available 09 mg2044 44,000 mg2 gates available 10 mg2091 91,000 mg2 gates available 11 mg2140 140,000 mg2 gates available 12 mg2194 194,000 mg2 gates available 13 mg2265 265,000 mg2 gates available 14 mg2 360 360,000 mg2 gates available 15 mg2480 480,000 mg2 gates available 16 mg2m044e composite 44,000 mg2rt gates available 17 mg2m091e composite 91,000 mg2rt gates available 18 mg2m140e composite 140,000 mg2rt gates available 19 mg2m1 94e composite 194,000 mg2rt gates available 20 mg2m265e composite 265,000 mg2rt gates available 21 mg2m360e composite 360,000 mg2rt gates available 22 mg2m480e composite 480,000 mg2rt gates available 23 mg2m044 composite 44,000 mg2 gates available 24 mg2m091 composite 91,000 mg2 gates available 25 mg2m140 composite 140,000 mg2 gates available 26 mg2m194 composite 194,000 mg2 gates available 27 mg2m265 composite 265,000 mg2 gates available 28 mg2m360 composite 360,000 mg2 gates available 29 mg2m480 composite 480,000 mg2 gates available
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 3 dscc form 2234 apr 97 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements doc umentation m vendor self - certification to the requirements for mil - std - 883 compliant, non - jan class level b microcircuits in accordance with mil - prf - 38535, appendix a q or v certification and qualification to mil - prf - 38535 1.2.4 case outline(s) . th e case outline(s) are as designated in mil - std - 1835 and as follows: outline letter descriptive designator terminals package style x see figure 1 132 flatpack gull wing leads y see figure 1 160 flatpack gull wing leads z see figure 1 196 flatpac k gull wing leads u see figure 1 256 flatpack unformed leads t see figure 1 352 quad flatpack with non - conductive tie bar m see figure 1 84 flatpack unformed leads n see figure 1 100 flatpack gull wing leads 4 cqcc2 - f172 172 flatpack unformed l eads 5 see figure 1 132 flatpack unformed leads 6 see figure 1 160 flatpack unformed leads 7 see figure 1 196 flatpack unformed leads 8 see figure 1 100 flatpack unformed leads 1.2.5 lead finish . the lead finish is as specified in mil - prf - 38535 for device classes q and v or mil - prf - 38535, appendix a for device class m. 1.3 absolute maximum ratings 1 / 2 / supply voltage range (v dd ) ................................ ................................ - 0.5 v to 7.0 v input voltage range (v in ) ................................ ................................ .... - 0.5 v to v dd + 0.5 v 3 / input current (i in ) s ignal pin ................................ ................................ .................. - 10 ma to 10 ma power pin ................................ ................................ .................. - 50 ma to 50 ma output short circuit current 4 / v out = v dd ................................ ................................ ................. 48 ma v out = v ss ................................ ................................ ................. - 36 ma lead temperature (soldering, 10 sec) ................................ ............... 300 c 5 / storage temperature ................................ ................................ .......... - 65 c to 150 c maximum junction temperature (t j ) ................................ .................. 175 c 1.4 recommended operating conditions . supply voltage range ................................ ................................ ......... 2.4 v to 5.5 v 6 / ambient operating temperature (t a ) ................................ ................. - 55 c to 125 c ______ 1 / stresses above the absolute maximum rating may cause permanent damage to the dev ice. extended operation at the maximum levels may degrade performance and affect reliability. 2 / all voltages referenced to ground unless otherwise specified. 3 / v dd + 0.5 v shall not exceed 7.0 v. 4 / the maximum output current of any single output in short condition for a maximum duration of 1 second. 5 / duration 10 s max at a distance not less than 1.6 mm. 6 / this gate array device is capable of being configured with v dd = 3.3 v 10% or v dd = 5.0 v 10%.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 4 dscc form 2234 apr 97 1.5 digital logic testing for device classes q and v . fault coverage measurement of manufacturing logic tests (mil - std - 883, test method 5012) ................................ .. as specified in the aid 2. applicable documents 2.1 government specification, sta ndards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil - prf - 38535 - integrated circuits, manufacturing, general specification for. standards department of de fense mil - std - 883 - test method standard microcircuits. mil - std - 1835 - interface standard electronic component case outlines. handbooks department of defense mil - hdbk - 103 - list of standard microcircuit drawings (smd's). mil - hdbk - 780 - s tandard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111 - 5094.) 2.3 order of p recedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption h as been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil - prf - 38535 and as specified herein or as modified in the device manufacturer's quality management (q m) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil - prf - 38535, appendix a for non - jan class level b devices and as s pecified herein. 3.1.1 microcircuit die . for the requirements for microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil - pr f - 38535 and herein for device classes q and v or mil - prf - 38535, appendix a and herein for device class m.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level a sheet 5 dscc form 2234 apr 97 3.3 aid requirements . all aids written against this smd shall be sent to dscc - va. the following items shall be provided to the device manufactur er by the customer as part of an aid. 3.3.1 terminal connections and pin assignments . 3.3.2 package type (see 1.2.4) . 3.3.3 functional block diagram (or equivalent vhdl behavioral description). 3.3.4 functional description terms and symbols . 3.3.5 logic diagram (or equivalent structural vhdl description or mutually agreed to net list). 3.3.6 pin function description . 3.3.7 design tape # or design document name (i.e., net list). 3.3.8 design functional tape # or name . 3.3.9 test functional tape # or name . 3.3.10 timing diagram(s) . 3.3.11 fault coverage measurement of manufacturing logic tests . 3.3.12 burn - in circuit . 3.3.13 esd class and voltage . 3.3.14 device electrical performance characteristics (additions to table i) . device electrical performance characteristics shall include dc parametric, functional, ac parameters and any other data which would be considered required by a design engineer. all electrical performance characteristics apply over the full recommended ambient o perating temperature range and specified test load conditions. 3.3.15 maximum power dissipation . maximum power dissipation shall be in accordance with the application specific design. 3.4 electrical performance characteristics and postirradiation pa rameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table i and shall apply over the full case operating temperature range. 3.5 electrical test requireme nts . the electrical test requirements shall be the subgroups specified in table ii. the electrical tests for each subgroup are defined in table i. 3.6 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer 's pin may also be marked as listed in mil - hdbk - 103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962 - " on the device. for rha product using this op tion, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil - prf - 38535. marking for device class m shall be in accordance with mil - prf - 38535, appendix a. the aid number shall be added to the marking by the manufacturer. 3.6.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil - prf - 38535. the compliance mark for device class m shall be a "c" as required in mil - prf - 38535, appe ndix a. 3.7 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a cert ificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil - hdbk - 103 (see 6.6.2 herein). the certificate of compliance submitted to dscc - va prior to listing as an approved source of supply for t his drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil - prf - 38535 and herein or for device class m, the requirements of mil - prf - 38535, appendix a and herein.
standard microcircuit drawing size a 596 2 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level d sheet 6 dscc form 2234 apr 97 3.8 certificate of conformance . a certificate of conformance as required for device classes q and v in mil - prf - 38535 or for device class m in mil - prf - 38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.9 notification of change for device cl ass m . for device class m, notification to dscc - va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil - prf - 38535, appendix a. 3.10 verification and review for device class m . fo r device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.11 microc ircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 123 (see mil - prf - 38535, appendix a).
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 7 dscc form 2234 apr 97 table i. electrical performance characteristics . test symbol group a subgroups device type limits unit conditions - 55 c t c +125 c v dd = 5.0 v 10 % unless otherwise specified min max input clamp voltage to gnd 1 / v ic i oh = - 300 m a 1, 2, 3 all - 1.2 - 0.2 v low level input current 2 / i il v in = gnd, v dd = 5.5 v 1, 2, 3 all - 5 - m a low level input current, pull - up 2 / i ilpu v in = gnd, v dd = 5.5 v 1, 2, 3 all - 120 - m a low level input current, pull - down 2 / i llpd v in = gnd, v dd = 5.5 v 1, 2, 3 all - 5 - m a high level input current 2 / i ih v in = v dd = 5.5 v 1, 2, 3 all - 5 m a high level input current, pull - up 2 / i ihpu v in = v dd = 5.5 v 1, 2, 3 all - 5 m a high level input current, pull - down 2 / i ihpd v in = v dd = 5.5 v 1, 2, 3 all - 330 m a output leakage low current 2 / i ozl outputs disabled v out = gnd 1, 2, 3 all - 5 m a output leakage high current pull - down output 2 / i ozhpd outputs disabled v out = v dd 1, 2, 3 all - 330 m a output leakage low current pull - up output 2 / i ozlpu outputs disabled v out = gnd 1, 2, 3 all - 120 - m a output leakage high current 2 / i ozh outputs disabled v out = v dd 1, 2, 3 all - 5 m a low level input voltage 1 / v il functional verification 1, 2, 3 all - 0.8 v low level output voltage buf 2 / v ol1 v dd = 4.5 v i ol = +3 ma 1, 2, 3 all - 0.4 v low level ou tput voltage buf 2 / v ol2 v dd = 4.5 v i ol = +6 ma 1, 2, 3 all - 0.4 v low level output voltage buf 2 / v ol3 v dd = 4.5 v i ol = +12 ma 1, 2, 3 all - 0.4 v high level output voltage buf 2 / v oh1 v dd = 4.5 v i oh = - 3 ma 1, 2, 3 all 3.9 - v high l evel output voltage buf 2 / v oh2 v dd = 4.5 v i oh = - 6 ma 1, 2, 3 all 3.9 - v see notes at end of table.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 8 dscc form 2234 apr 97 table i. electrical performance characteristics . - continued. limits test symbol conditions - 55 c t c +125 c v dd = 5.0 v 10 % unless otherwise specified group a subgroups device type min max unit high level output voltage buf 2 / v oh3 v dd = 4.5 v i oh = - 12 ma 1, 2, 3 all 3.9 - v schmitt trigger positive threshold cmos in put ttl input 3 / v t+ 1, 2, 3 - 2.8 1.5 v schmitt trigger negative threshold cmos input ttl input 3 / v t - 1, 2, 3 1.2 1.0 - v high level input voltage 1 / v ih functional verification 1, 2, 3 all 2.2 - v input capacitance 3 / c i v dd = 0 v 4 all 15 pf output capacitance 3 / c io v dd = 0 v 4 all 15 pf see notes at end of table.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 9 dscc form 2234 apr 97 table i. electrical performance characteristics. test symbol group a subgroups device type limits unit conditions - 55 c t c +125 c v dd = 3.3 v 10 % unless otherwise specified min max input clamp voltage to gnd 1 / v ic i oh = - 300 m a 1, 2, 3 all - 1.2 - 0.2 v low level input current 2/ i il v in = gnd, v dd = 3.3 v 1, 2, 3 all - 1 - m a low level input current, pull - up 2 / i ilpu v in = gnd, v dd = 3.3v 1, 2, 3 all - 60 - m a low level input current, pull - down 2 / i llpd v in = gnd, v dd = 3.3 v 1, 2, 3 all - 1 - m a high level input current 2 / i ih v in = v dd = 3.3 v 1, 2, 3 all - 1 m a high level input current, pull - up 2 / i ihpu v in = v dd = 3.3 v 1, 2, 3 all - 1 m a high level input current, pull - down 2 / i ihpd v in = v dd = 3.3 v 1, 2, 3 all - 150 m a output leakage low current 2 / i ozl outputs disabled v ou t = gnd 1, 2, 3 all - 1 m a output leakage high current pull - down output 2 / i ozhpd outputs disabled v out = v dd 1, 2, 3 all - 150 m a output leakage low current pull - up output 2 / i ozlpu outputs disabled v out = gnd 1, 2, 3 all - 60 - m a output l eakage high current 2 / i ozh outputs disabled v out = v dd 1, 2, 3 all - 1 m a low level input voltage 1 / v il functional verification 1, 2, 3 all - 0.8 v low level output voltage buf 2 / v ol1 v dd = 3.3 v i ol = +1.5 ma 1, 2, 3 all - 0.4 v low level o utput voltage buf 2 / v ol2 v dd = 3.3 v i ol = +3 ma 1, 2, 3 all - 0.4 v low level output voltage buf 2 / v ol3 v dd = 3.3 v i ol = +6 ma 1, 2, 3 all - 0.4 v high level output voltage buf 2 / v oh1 v dd = 2.7 v i oh = - 1 ma 1, 2, 3 all 2.4 - v high level output voltage buf 2 / v oh2 v dd = 2.7 v i oh = - 2 ma 1, 2, 3 all 2.4 - v see notes at end of table.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 10 dscc form 2234 apr 97 table i. electrical performance characteristics . - continued. limits test symbol conditions - 55 c t c +125 c v dd = 3.3 v 10 % unless otherwise specified group a subgroups device type min max unit high level output voltage bu2 2 / v oh3 v dd = 2.7 v i oh = - 4 ma 1, 2, 3 all 2.4 - v schmitt trigger positive threshold cmos inp ut ttl input 3 / v t+ 1, 2, 3 - 1.5 1.1 v schmitt trigger negative threshold cmos input ttl input 3 / v t - 1, 2, 3 0.8 0.2 - v high level input voltage 1 / v ih functional verification 1, 2, 3 all 2.2 - v input capacitance 3 / c i v dd = 0 v 4 all 15 pf output capacitance 3 / c io v dd = 0 v 4 all 15 pf 1 / forcing conditions of the functional test, assure that these limits are met, but they will not be individually recorded. 2 / read & record measurements in accordance w ith mil - prf - 38535. 3 / tested at initial design and after major process changes, otherwise guaranteed.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 11 dscc form 2234 apr 97 case x figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 12 dscc form 2234 apr 97 case y figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 13 dscc form 2234 apr 97 case z figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 14 dscc form 2234 apr 97 case u figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 15 dscc form 2234 apr 97 case t figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 16 dscc form 2234 apr 97 case m figure 1. case outlines - continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 17 dscc form 2234 apr 97 case n figure 1. case outlines ? continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 18 dscc form 2234 apr 97 case 5 figure 1. case outlines ? continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 19 dscc form 2234 apr 97 case 6 figure 1. case outlines ? continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 re vision level a sheet 20 dscc form 2234 apr 97 case 7 figure 1. case outlines ? continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level d sheet 21 dscc form 2234 apr 97 case 8 figure 1. case outlines ? continued
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level d sheet 22 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, s ampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for dev ice class m, sampling and inspection procedures shall be in accordance with mil - prf - 38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil - prf - 38535, and shall be conducted on all devices prior to qualif ication and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil - std - 883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device cla ss m . a. burn - in test, method 1015 of mil - std - 883. (1) test condition is described in the aid. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activ ity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125c, minimum. b. interim and final electrical test parameters sh all be as specified in table ii herein. 4.2.2 additional criteria for device classes q and v . a. the burn - in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in acco rdance with mil - prf - 38535. the burn - in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil - prf - 38535 and shall be made available to the acquiring or pre paring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil - std - 883. b. interim and final electrical test parameters sh all be as specified in table ii herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil - prf - 38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification i nspection for device classes q and v shall be in accordance with mil - prf - 38535. inspections to be performed shall be those specified in mil - prf - 38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspect ion . technology conformance inspection for classes q and v shall be in accordance with mil - prf - 38535 including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mi l - prf - 38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil - std - 883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level d sheet 23 dscc form 2234 apr 97 table ii. electrical test requirements . test requirements subgroups (in accordance with mil - std - 883, method 5005, table i) subgroups (in accordance with mil - prf - 38535, table iii) device class m device class q device class v interim electrical para meters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 final electrical parameters (see 4.2) 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / group a test requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end - point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group d end - point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group e end - point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1 and 7. 4.4.1 group a inspection . a. tests shall be as specified in table ii herein. b. for device class q and v, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device as described in the aid. 4.4.2 group c inspection . the group c inspection end - point electrical parameters shall be as specified in table ii herein. 4.4.2.1 additional criteria for device class m . steady - s tate life test conditions, method 1005 of mil - std - 883: a. test condition as described in the aid. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring ac tivity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil - std - 883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil - std - 883. 4.4.2.2 additional criteria for device classes q and v . the steady - state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufactu rer's qm plan in accordance with mil - prf - 38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil - prf - 38535 and shall be made available to the acquiring or preparing activit y upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil - std - 883.
standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level d sheet 24 dscc form 2234 apr 97 4.4.3 group d inspection . the group d inspection end - point e lectrical parameters shall be as specified in table ii herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end - point electrical parameters shall be as specified in table ii herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil - prf - 38535 for the rha level being tested. for device class m, the devices shall be subjec ted to radiation hardness assured tests as specified in mil - prf - 38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end - point electrical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table ii herein. c. when specified in the purchase order or contract, a copy of the rha delta limits shall be supplied. 5. packaging 5.1 packaging requirements . the requirements for packaging s hall be in accordance with mil - prf - 38535 for device classes q and v or mil - prf - 38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (o riginal equipment), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability . dev ice class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc wi ll maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc - va, telephone (614) 692 - 0544. 6.4 comments . commen ts on this drawing should be directed to dscc - va , columbus, ohio 43216 - 5000, or telephone (614) 692 - 0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil - prf - 38535 and mil - hdbk - 1 331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml - 38535. the vendors listed in qml - 38535 have submitted a certificate of compliance (see 3.6 herein) to dscc - va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for class m are listed in mil - hdbk - 103. the vendors listed in mil - hdbk - 103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc - va.
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 25 dscc form 2234 apr 97 10. scope 10.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mil - prf - 38535 and the manufacturers approved qml plan for use in monolithic microcircuits, multi chip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil - prf - 38534 are speci fied herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available a choice of radiation hardiness assurance (r ha) levels are reflected in the pin. 10.2 pin . the pin is as shown in the following example: 5962 - 00b02 01 v 9 a ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? fed eral rha device device die die stock class designator type class code details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) \ / (see 10.2.3) \ / drawing number 10.2.1 rha designator . device classes q and v rha identified die shall meet the mil - prf - 38535 specified rha levels. a dash ( - ) indicates a non - rha die. 10.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 mg2044e 44,000 mg2rt gates available 02 mg2091e 91,000 mg2rt gates available 03 mg2140e 140,000 mg2rt gates available 04 mg2194e 194,000 mg2rt gates available 05 mg2265e 265,000 mg2rt gates available 06 mg2360e 360,000 mg2rt gates available 07 mg2480e 480,000 mg2rt gates available 09 mg2044 4 4,000 mg2 gates available 10 mg2091 91,000 mg2 gates available 11 mg2140 140,000 mg2 gates available 12 mg2194 194,000 mg2 gates available 13 mg2265 265,000 mg2 gates available 14 mg2360 360,000 mg2 gates available 15 mg2480 480,000 mg2 gates available 16 mg2m044e composite 44,000 mg2rt gates available 17 mg2m091e composite 91,000 mg2rt gates available 18 mg2m140e composite 140,000 mg2rt gates available 19 mg2m194e composite 194,000 mg2rt gates avail able 20 mg2m265e composite 265,000 mg2rt gates available 21 mg2m360e composite 360,000 mg2rt gates available 22 mg2m480e composite 480,000 mg2rt gates available 23 mg2m044 composite 44,000 mg2 gates available 24 mg2m091 composite 91, 000 mg2 gates available 25 mg2m140 composite 140,000 mg2 gates available 26 mg2m194 composite 194,000 mg2 gates available 27 mg2m265 composite 265,000 mg2 gates available 28 mg2m360 composite 360,000 mg2 gates available 29 mg2m480 composite 480,000 mg2 gates available
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 26 dscc form 2234 apr 97 10.2.3 device class designator . device class device requirements documentation q or v certification and qualification to the die requirements of mil - prf - 385 35 10.2.4 die details . the die details designation shall be a unique letter which designates the die physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each pr oduct and variant supplied to this appendix. 10.2.4.1 die physical dimensions . die type figure number 01 a - 1 02 a - 2 03 a - 3 04 a - 4 05 a - 5 06 a - 6 07 a - 7 08 reversed 09 a - 1 10 a - 2 11 a - 3 12 a - 4 13 a - 5 14 a - 6 15 a - 7 16 a - 1 17 a - 2 18 a - 3 19 a - 4 20 a - 5 21 a - 6 22 a - 7 23 a - 1 24 a - 2 25 a - 3 26 a - 4 27 a - 5 28 a - 6 29 a - 7
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 27 dscc form 2234 apr 97 10.2.4.2 die bonding pad locations and electrical functions . die type figure number 01 a - 1 02 a - 2 03 a - 3 04 a - 4 05 a - 5 06 a - 6 07 a - 7 08 reserved 09 a - 1 10 a - 2 11 a - 3 12 a - 4 13 a - 5 14 a - 6 15 a - 7 16 a - 1 17 a - 2 18 a - 3 19 a - 4 20 a - 5 21 a - 6 22 a - 7 23 a - 1 24 a - 2 25 a - 3 26 a - 4 27 a - 5 28 a - 6 29 a - 7
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 28 dscc form 2234 apr 97 10.2.4.3 interface materials . die type figure number 01 a - 1 02 a - 2 03 a - 3 04 a - 4 05 a - 5 06 a - 6 07 a - 7 08 reserved 09 a - 1 10 a - 2 11 a - 3 12 a - 4 13 a - 5 14 a - 6 15 a - 7 16 a - 1 17 a - 2 18 a - 3 19 a - 4 20 a - 5 21 a - 6 22 a - 7 23 a - 1 24 a - 2 25 a - 3 26 a - 4 27 a - 5 28 a - 6 29 a - 7
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 29 dscc form 2234 apr 97 10.2.4.4 assembly related information . die type figur e number 01 a - 1 02 a - 2 03 a - 3 04 a - 4 05 a - 5 06 a - 6 07 a - 7 08 reserved 09 a - 1 10 a - 2 11 a - 3 12 a - 4 13 a - 5 14 a - 6 15 a - 7 16 a - 1 17 a - 2 18 a - 3 19 a - 4 20 a - 5 21 a - 6 22 a - 7 23 a - 1 24 a - 2 25 a - 3 26 a - 4 27 a - 5 28 a - 6 29 a - 7 10.3 absolute maximum ratings . see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions . see paragraph 1.4 within the body of this drawing for details.
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 30 dscc form 2234 apr 97 20. applicable documents. 20.1 government specifications, standards, and handbooks . unless o therwise specified, the following specification, standard, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein. specification department of defense mil - prf - 38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil - std - 883 - test method standard microcircuits. handbook department of defense mil - hdbk - 103 - list of standard microcircuit drawings (smd?s). (copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting act ivity or as directed by the contracting activity). 20.2. order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. requirements 30.1 item re quirements . the individual item requirements for device classes q and v shall be in accordance with mil - prf - 38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions . the design, construction and physical dimensions shall be as specified in mil - prf - 38535 and the manufacturer?s qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions . the die physical dimensions shall be as specified in 10.2.4.1 and on figures a - 1 thru a - 7. 30.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions s hall be as specified in 10.2.4.2 and on figures a - 1 thru a - 7. 30.2.3 interface materials . the interface materials for the die shall be as specified in 10.2.4.3 and on figures a - 1 thru a - 7. 30.2.4 assembly related information . the assembly related inf ormation shall be as specified in 10.2.4.4 and figures a - 1 thru a - 7. 30.2.5 truth table(s) . the truth table(s) shall be as defined within paragraph 3.2.3. of the body of this document. 30.3 electrical performance characteristics and post - irradiation p arameter limits . unless otherwise specified herein, the electrical performance characteristics and post - irradiation parameter limits are as specified in table i of the body of this document. 30.4 electrical test requirements . the wafer probe test require ments shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table i.
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 31 dscc form 2234 apr 97 30.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer?s identification and the pin listed in 10.2 herein. the certification mark shall be a ?qml? or ?q? as required by mil - prf - 3 85 35. 30.6 certification of compliance . for device classes q and v, a certificate of compliance shall be required from a qml - 38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of compliance submitted to dscc - va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, the requirements of mil - prf - 38535 and the requirements herein. 30.7 certificate of con formance . a certificate of conformance as required for device classes q and v in mil - prf - 38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. quality assurance provisions 40.1 sampling and inspection . for device cl asses q and v, die sampling and inspection procedures shall be in accordance with mil - prf - 38535 or as modified in the device manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as describ ed herein. 40.2 screening . for device classes q and v, screening shall be in accordance with mil - prf - 38535, and as defined in the manufacturer?s qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria defined within mil - std - 883 test method 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil - std - 883 test method 2010 or the alternate procedures allowed within mil - std - 883 test method 5004. 40.3 conformance inspection . 40.3.1 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specifi ed in mil - prf - 38535. end point electrical testing of packaged die shall be as specified in table iia herein. group e tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1., 4.4.4.2, 4.4.4.3 and 4.4.4.4. 50. die carrier 50.1 die car rier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic prot ection. 60 notes 60.1 intended use . microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil - prf - 38535 or mil - prf - 38534 for government microcircuit applications (original equipment), design applica tions and logistics purposes. 60.2 comments . comments on this appendix should be directed to dscc - va, columbus, ohio, 43216 - 5000 or telephone (614) - 692 - 0547. 60.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions use d herein are defined within mil - prf - 38535 and mil - std - 1331. 60.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml - 38535. the vendors listed within qml - 38535 have submitted a certificate of comp liance (see 30.6 herein) to dscc - va and have agreed to this drawing.
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 32 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. die bonding pad locations and electrical functions die physical dimensions. die size: 4940.04 x 4840.11 microns (with scribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon assembly related information. substrate potential: not connected special assembly instructions: none figure a - 1. die bonding pad locations and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 33 dscc form 2234 apr 97 figure a - 1. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 34 dscc form 2234 apr 97 fi gure a - 1. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 35 dscc form 2234 apr 97 figure a - 1. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 36 dscc form 2234 apr 97 figure a - 1. die bonding pad location s and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 37 dscc form 2234 apr 97 figure a - 1. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 38 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not avai lable. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. die bonding pad locations and electrical functions die physical dimensions. die size: 6600.05 x 6530. 05 microns (with scribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single cry stal silicon assembly related information. substrate potential: not connected special assembly instructions: none figure a - 2. die bonding pad locations and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 39 dscc form 2234 apr 97 figure a - 2. die bonding pad l ocations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 40 dscc form 2234 apr 97 figure a - 2. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 41 dscc form 2234 apr 97 figure a - 2. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 42 dscc form 2234 apr 97 figure a - 2. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 43 dscc form 2234 apr 97 figure a - 2. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 44 dscc form 2234 apr 97 figure a - 2. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 45 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the dev ice manufacturer. see subsequent pages for a table of pad locations. die bonding pad locations and electrical functions die physical dimensions. die size: 7600.11 x 7590.13 microns (with scribe line) die thickness: 475 microns int erface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon assembly related information. substrate potential : not connected special assembly instructions: none figure a - 3. die bonding pad locations and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 46 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 47 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 48 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 49 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 50 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 51 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electr ical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 52 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 53 dscc form 2234 apr 97 figure a - 3. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 54 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. die bond ing pad locations and electrical functions die physical dimensions. die size: 8730 x 8790 microns (with scribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silic on glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon assembly related information. substrate potential: not connected special assembly instructions: none figure a - 4. die bonding pad locati ons and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 55 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 56 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 57 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 58 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 59 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 60 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 61 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 62 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 63 dscc form 2234 apr 97 figure a - 4. die bonding pad locations and electrical functions . - continue d
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 64 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. di e bonding pad locations and electrical functions die physical dimensions. die size: 9910.15 x 9900.09 microns (with scribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon assembly related information. substrate potential: not connected special assembly instructions: none figure a - 5. die bondin g pad locations and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 65 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 66 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - c ontinued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 67 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 68 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 69 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 70 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 71 dscc form 2234 apr 97 figure a - 5. die bondin g pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 72 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 73 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical fun ctions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 74 dscc form 2234 apr 97 figure a - 5. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 75 dscc form 2234 apr 97 due to the complexity of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. die bonding pad locations and electrical functions die physical dimensions. die size: 11530.09 x 11600.13 microns (with s cribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivation. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon ass embly related information. substrate potential: not connected special assembly instructions: none figure a - 6. die bonding pad locations and electrical functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 76 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electr ical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 77 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 78 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 79 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 80 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 81 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 82 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 83 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 84 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 85 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - contin ued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 86 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 87 dscc form 2234 apr 97 figure a - 6. die bonding pad locations and electrical functions . - continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 88 dscc form 2234 apr 97 due to the complexit y of the device, a graphical representation of the pad locations is not available. this figure shall be maintained and available from the device manufacturer. see subsequent pages for a table of pad locations. die bonding pad locations and el ectrical functions die physical dimensions. die size: 13020.13 x 12950.12 microns (with scribe line) die thickness: 475 microns interface materials. top metallization: aluminium + copper backside metallization: bare silicon glassivatio n. type: oxinitride thickness: 10,000 angstroms substrate: single crystal silicon assembly related information. substrate potential: not connected special assembly instructions: none figure a - 7. die bonding pad locations and electrica l functions .
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 89 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 90 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 91 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 92 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 93 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 94 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 95 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functio ns . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 96 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 97 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 98 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 99 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 100 dscc form 2234 apr 97 figure a - 7. die bond ing pad locations and electrical functions . ? continued
appendix a appendix a forms a part of smd 5962 - 00b02 standard microcircuit drawing size a 5962 - 00b02 defense supply center columbus columbus, ohio 43216 - 5000 revision level e sheet 101 dscc form 2234 apr 97 figure a - 7. die bonding pad locations and electrical functions . - continued
standard microcircuit drawing bulletin date: 02 - 03 - 08 approved sources of suppl y for smd 5962 - 00b02 are listed below for immediate acquisition information only and shall be added to mil - hdbk - 103 and qml - 38535 during the next revision. mil - hdbk - 103 and qml - 38535 will be revised to include the addition or deletion of sources. the ven dors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc - va. this bulletin is superseded by the next dated revision of mil - hdbk - 103 and qml - 38535. standard microcircuit drawing pin 1 / v endor cage number vendor similar pin 2 / 5962 - 00b0201q_c 3 / 5962 - 00b0201v_c 3 / 5962 - 00b0201q9a 4 / 5962 - 00b0201v9a 4 / f7400 mg2044e mg2044e mm0 - g2044ehxxxmq sm0 - g2044ehxxxsv 5962 - 00b0202q_c 3 / 5962 - 00b0202v_c 3 / 5962 - 00b0202q9a 4 / 5962 - 00b0202v9a 4 / f74 00 mg2091e mg2091e mm0 - g2091ehxxxmq sm0 - g2091ehxxxsv 5962 - 00b0203q_c 3 / 5962 - 00b0203v_c 3 / 5962 - 00b0203q9a 4 / 5962 - 00b0203v9a 4 / f7400 mg2140e mg2140e mm0 - g2140ehxxxmq sm0 - g2140ehxxxsv 5962 - 00b0204q_c 3 / 5962 - 00b0204v_c 3 / 5962 - 00b0204q9a 4 / 5962 - 00b02 04v9a 4 / f7400 mg2194e mg2194e mm0 - g2194ehxxxmq sm0 - g2194ehxxxsv 5962 - 00b0205q_c 3 / 5962 - 00b0205v_c 3 / 5962 - 00b0205q9a 4 / 5962 - 00b0205v9a 4 / f7400 mg2265e mg2265e mm0 - g2265ehxxxmq sm0 - g2265ehxxxsv 5962 - 00b0206q_c 3 / 5962 - 00b0206v_c 3 / 5962 - 00b0206q9a 4 / 5962 - 00b0206v9a 4 / f7400 mg2360e mg2360e mm0 - g2360ehxxxmq sm0 - g2360ehxxxsv 5962 - 00b0207q_c 3 / 5962 - 00b0207v_c 3 / 5962 - 00b0207q9a 4 / 5962 - 00b0207v9a 4 / f7400 mg2480e mg2480e mm0 - g2480ehxxxmq sm0 - g2480ehxxxsv
standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962 - 00b0209q_c 3 / 5962 - 00b0209q9a 4 / f7400 mg2044 mm0 - g2044xxxmq 5962 - 00b0210q_c 3 / 5962 - 00b0210q9a 4 / f7400 mg2091 mm0 - g2091xxxmq 5962 - 00b0211q_c 3 / 5962 - 00b0211q9a 4 / f7400 mg2140 mm0 - g2140xxxmq 5962 - 00b 0212q_c 3 / 5962 - 00b0212q9a 4 / f7400 mg2194 mm0 - g2194xxxmq 5962 - 00b0213q_c 3 / 5962 - 00b0213q9a 4 / f7400 mg2265 mm0 - g2265xxxmq 5962 - 00b0214q_c 3 / 5962 - 00b0214q9a 4 / f7400 mg2360 mm0 - g2360xxxmq 5962 - 00b0215q_c 3 / 5962 - 00b0215q9a 4 / f7400 mg2480 mm0 - g248 0xxxmq 5962 - 00b0216q_c 3 / 5962 - 00b0216v_c 3 / 5962 - 00b0216q9a 4 / 5962 - 00b0216v9a 4 / f7400 mg2m044e mg2m044e mm0 - g2m044ehxxxmq sm0 - g2m044ehxxxsv 5962 - 00b0217q_c 3 / 5962 - 00b0217v_c 3 / 5962 - 00b0217q9a 4 / 5962 - 00b0217v9a 4 / f7400 mg2m091e mg2m091e mm0 - g2m091 ehxxxmq sm0 - g2m091ehxxxsv 5962 - 00b0218q_c 3 / 5962 - 00b0218v_c 3 / 5962 - 00b0218q9a 4 / 5962 - 00b0218v9a 4 / f7400 mg2m140e mg2m140e mm0 - g2m140ehxxxmq sm0 - g2m140ehxxxsv 5962 - 00b0219q_c 3 / 5962 - 00b0219v_c 3 / 5962 - 00b0219q9a 4 / 5962 - 00b0219v9a 4 / f7400 mg2m194e mg2m194e mm0 - g2m194ehxxxmq sm0 - g2m194ehxxxsv 5962 - 00b0220q_c 3 / 5962 - 00b0220v_c 3 / 5962 - 00b0220q9a 4 / 5962 - 00b0220v9a 4 / f7400 mg2m265e mg2m265e mm0 - g2m265ehxxxmq sm0 - g2m265ehxxxsv 5962 - 00b0221q_c 3 / 5962 - 00b0221v_c 3 / 5962 - 00b0221q9a 4 / 5962 - 00b0221v 9a 4 / f7400 mg2m360e mg2m360e mm0 - g2m360ehxxxmq sm0 - g2m360ehxxxsv
standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962 - 00b0222q_c 3 / 5962 - 00b0222v_c 3 / 5962 - 00b0222q9a 4 / 5962 - 00b0222v9a 4 / f7400 mg2m480e mg2m480e mm0 - g2m480ehxxxmq sm0 - g2m480ehxxxsv 5962 - 00b0223q_c 3 / 5962 - 00b0223q9a 4 / f7400 mg2m044 mm0 - g2m044xxxmq 5962 - 00b0224q_c 3 / 5962 - 00b0224q9a 4 / f7400 mg2m091 mm0 - g2m091xxxmq 5962 - 00b0225q_c 3 / 5962 - 00b0225q9a 4 / f7400 mg2m140 mm0 - g2m140xxxmq 5962 - 00b 0226q_c 3 / 5962 - 00b0226q9a 4 / f7400 mg2m194 mm0 - g2m194xxxmq 5962 - 00b0227q_c 3 / 5962 - 00b0227q9a 4 / f7400 mg2m265 mm0 - g2m265xxxmq 5962 - 00b0228q_c 3 / 5962 - 00b0228q9a 4 / f7400 mg2m360 mm0 - g2m360xxxmq 5962 - 00b0229q_c 3 / 5962 - 00b0229q9a 4 / f7400 mg2m480 m m0 - g2m480xxxmq 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / due to the nature of this smd, the standard microcircuit drawing pin and corresponding vendor similar pin shall be specified in the aid. 4 / the ?xxx? is reserved to indicate the customer specific code. vendor cage vendor name number and address f7400 atmel nantes s.a. part of atmel wireless & microcontrollers la chantrerie bp 70602 44306 nantes cedex 03 france the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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