st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com description the st3400 is the n-channel logic enhancement mode power field effe ct transistor is produced using high cell density, dmos trench technology. this high-density process is especially tailo red to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and ot her battery powered circuits where high side switching . feature pin configuration sot-23-3l z 30v/5.8a, r ds(on) = 28m (typ.) @v gs = 10v z 30v/4.8a, r ds(on) = 33m @v gs = 4.5v 3 1 stn3400 2006. v1 1 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: week code ordering information part number package part marking ST3400S23RG sot-23-3l a0ya week code code : a ~ z(1~26) ; a ~ z(27~52) ST3400S23RG s23 : sot-23-3l ; r : tape reel ; g : pb ? free z 30v/4.0a, r ds(on) = 40m @v gs = 2.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23-3l package design d g s 2 3 1 2 a0ya
st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com stn3400 2006. v1 2 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 30 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 5.8 3.5 a pulsed drain current i dm 25 a continuous source current (diode conduction) i s 1.7 a power dissipation t a =25 t a =70 p d 2.0 1.3 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 90 /w
st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com stn3400 2006. v1 3 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.8 1.6 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =24v,v gs =0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0v t j =55 10 ua on-state drain current i d(on) v ds R 5v,v gs =4.5v 10 a drain-source on-resistance r ds(on) v gs =10v,i d =5.8a v gs =4.5v,i d =4.8a v gs =2.5v,i d =4.0a 28 33 40 m forward transconductance g fs v ds =4.5v,i d =5.8a 12 s diode forward voltage v sd i s =1.7a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 9.7 18 gate-source charge q gs 1.6 gate-drain charge q gd v ds =15v v gs =10v i d ? 6.7a 3.1 nc input capacitance c iss 450 output capacitance c oss 240 reverse transfer capacitance c rss v ds =15v v gs =0v f=1mh z 38 pf 7 15 turn-on time t d(on) tr 10 20 20 40 turn-off time t d(off) tf v dd =15v r l =15 i d =1.0a v gen =10v r g =6 11 20 ns
st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com typical characterictics (25 unless noted) stn3400 2006. v1 4
st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com typical characterictics (25 unless noted) stn3400 2006. v1 5
st3400 n channel enhancement mode mosfet 5.8a 120 bentley square, mount ain view, ca 94040 usa http://www.stnasontech.com sot-23-3l package outline stn3400 2006. v1 6
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