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  complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version available in 16 mm tape and reel (at4o suffix) ? electrically similar to mje2955 and mje3055 ? dc current gain specified to 10 amperes ? high current gainbandwidth product e f t = 2.0 mhz (min) @ i c = 500 madc ??????????????????????? ??????????????????????? maximum ratings ????????????? ????????????? rating ????? ????? symbol ????? ????? value ??? ??? unit ????????????? ????????????? collectoremitter voltage ????? ????? v ceo ????? ????? 60 ??? ??? vdc ????????????? ????????????? collectorbase voltage ????? ????? v cb ????? ????? 70 ??? ??? vdc ????????????? ????????????? emitterbase voltage ????? ????? v eb ????? ????? 5 ??? ??? vdc ????????????? ????????????? collector current ????? ????? i c ????? ????? 10 ??? ??? adc ????????????? ????????????? base current ????? ????? i b ????? ????? 6 ??? ??? adc ????????????? ? ??????????? ? ????????????? total power dissipation @ t c = 25  c derate above 25  c ????? ? ??? ? ????? p d 2 ????? ? ??? ? ????? 20 0.16 ??? ? ? ? ??? watts w/  c ????????????? ? ??????????? ? ????????????? total power dissipation (1) @ t a = 25  c derate above 25  c ????? ? ??? ? ????? p d ????? ? ??? ? ????? 1.75 0.014 ??? ? ? ? ??? watts w/  c ????????????? ????????????? operating and storage junction temperature range ????? ????? t j , t stg ????? ????? 55 to +150 ??? ???  c ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ????????????? ????????????? characteristic ????? ????? symbol ????? ????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ????? ????? r q jc ????? ????? 6.25 ??? ???  c/w ????????????? ????????????? thermal resistance, junction to ambient (1) ????? ????? r q ja ????? ????? 71.4 ??? ???  c/w (1) these ratings are applicable when surface mounted on the minimum pad sizes recommended. 2safe area curves are indicated by figure 1. both limits are applicable and must be observed. on semiconductor  ? semiconductor components industries, llc, 2001 november, 2001 rev. 5 1 publication order number: mjd2955/d mjd2955 mjd3055 case 369a13 silicon power transistors 10 amperes 60 volts 20 watts case 36907 minimum pad sizes recommended for surface mounted applications pnp npn 0.243 6.172 0.063 1.6 0.118 3.0 0.100 2.54 0.165 4.191 0.190 4.826 inches mm
mjd2955 mjd3055 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25  c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 50 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 70 vdc, v eb(off) = 1.5 vdc) (v ce = 70 vdc, v eb(off) = 1.5 vdc, t c = 150  c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 0.02 2 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 70 vdc, i e = 0) (v cb = 70 vdc, i e = 0, t c = 150  c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.02 2 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 0.5 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (1) (i c = 4 adc, v ce = 4 vdc) (i c = 10 adc, v ce = 4 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 20 5 ???? ? ?? ? ? ?? ? ???? 100 e ??? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 4 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.1 8 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 4 adc, v ce = 4 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.8 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 500 madc, v ce = 10 vdc, f = 500 khz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width  300 m s, duty cycle  2%.
mjd2955 mjd3055 http://onsemi.com 3 v, voltage (volts) t, time (s) m 5 3 2 1 0.5 0.3 0.7 0.2 500 300 200 100 30 20 50 i c , collector current (amp) 2 0.5 0.3 i c , collector current (amp) 0.2 figure 1. power derating figure 2. dc current gain 0.01 0.02 0.05 1 10 25 0.1 figure 3. turnon time figure 4. a on o voltages, mjd3055 t j = 25 c t r t j = 150 c -55 c 25 c 1 0.7 0.2 i c , collector current (amp) 0.2 1 6 0.6 2 0.06 0.4 4 i c , collector current (amp) 0.1 0.2 0.3 1 10 25 0.5 3 figure 5. turn off time h fe , dc current gain v ce = 2 v 10 5 0.5 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t c t a surface mount t s 1.4 0.8 0.6 0 1.2 1 0.4 0.2 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c v cc = 30 v i c /i b = 10 0.05 0.03 0.02 0.1 0.07 v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2 v 0.1 0.05 0.07 0.1 t d @ v be(off) 5 v 0.2 1 6 0.6 2 0.06 0.4 4 0.1 t, time (s) m t f typical characteristics
mjd2955 mjd3055 http://onsemi.com 4 figure 6. aono voltages, mjd2955 2 0.1 0 0.2 0.3 0.5 1 3 10 0.8 1.6 1.2 v, voltage (volts) 0.4 5 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 3 v figure 7. switching time test circuit figure 8. thermal response t, time (ms) 1 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1 2 5 10 20 50 100 200 500 r q jc(t) = r(t) r q jc r q jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.1 0.5 0.2 resistance (normalized) 1 k 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 i c , collector current (amp) 2 +11 v 25 m s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 d 1 must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma r b and r c varied to obtain desired current levels 0.01 figure 9. maximum forward bias safe operating area 0.01 v ce , collector-emitter voltage (volts) 0.02 5 2 1 10 0.5 0.1 t j = 150 c 1ms dc 3 0.3 0.6 1 2 60 20 40 i c , collector current (amp) wire bond limit thermal limit t c = 25 c (d = 0.1) second breakdown limit 10 6 4 500 m s 0.03 0.05 100 m s 5ms forward bias safe operating area information there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 9 is based on t j(pk) = 150  c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk)  150  c. t j(pk) may be calculated from the data in figure 8. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd2955 mjd3055 http://onsemi.com 5 package dimensions case 369a13 issue aa dpak d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4
mjd2955 mjd3055 http://onsemi.com 6 package dimensions case 36907 issue m dpak notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27
mjd2955 mjd3055 http://onsemi.com 7 notes
mjd2955 mjd3055 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd2955/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada


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