SCG3019 n-channel enhancement mosfet elektronische bauelemente 04-may-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. so t -523 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low on-resistance. ? fast switching speed. ? low voltage drive makes this device ideal for portable equipment. ? easily designed drive circuits. ? easy to parallel. equivalent circuit maximum ratings (t a =25 unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 0.1 a total power dissipation p d 0.15 w operating junction temperature range t j 150 c operating storage temperature range t stg -55~150 c thermal resistance, junction to ambient r ja 833 c / w device marking kn ref. millimete r ref. millimete r min. max. min. max. a 1.50 1.70 k 0.30 0.50 b 0.75 0.95 m --- 10 o c 0.60 0.80 n --- 10 o d 0.23 0.33 s 1.50 1.70 g 0.50bsc j 0.10 0.20
SCG3019 n-channel enhancement mosfet elektronische bauelemente 04-may-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) characteristics symbol min typ ma x unit test conditions off characteristics drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 10 a zero gate voltage drain current i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 1 a v gs = 20v, v ds =0v gate threshold voltage v gs(th) 0.8 - 1.5 v v ds = 3v, i d =100 a static drain-source on resistance r ds(on) - - 8 ? v gs = 4v, i d = 10ma - - 13 v gs = 2.5v, i d = 1ma forward transfer admittance gfs 20 - - ms v ds = 3v, i d = 10ma dynamic characteristics input capacitance c iss - 13 - pf v ds = 5v, v gs = 0v, f= 1mhz output capacitance c oss - 9 - reverse transfer capacitance c rss - 4 - switching characteristics turn-on delay time t d(on) - 15 - ns v gs = 5v, v dd = 5v, i d = 10ma, r g = 10 ? , r l = 500 ? rise time t r - 35 - turn-off delay time t d(off) - 80 - fall time t f - 80 -
SCG3019 n-channel enhancement mosfet elektronische bauelemente 04-may-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SCG3019 n-channel enhancement mosfet elektronische bauelemente 04-may-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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