? 2000 ixys all rights reserved 1 - 4 i trms = 2x 300 a i tavm = 2x 130 a v rrm = 800-1800 v symbol test conditions maximum ratings i trms , i frms t vj = t vjm 300 a i tavm , i favm t c = 85 c; 180 sine 130 a i tsm , i fsm t vj = 45 c; t = 10 ms (50 hz), sine 4750 a v r = 0 t = 8.3 ms (60 hz), sine 5080 a t vj = t vjm t = 10 ms (50 hz), sine 4230 a v r = 0 t = 8.3 ms (60 hz), sine 4530 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 113 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 108 000 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 89 500 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 86 200 a 2 s (di/dt) cr t vj = t vjm repetitive, i t = 500 a 150 a/ s f =50 hz, t p =200 s v d = 2/3 v drm i g = 0.5 a non repetitive, i t = 500 a 500 a/ s di g /dt = 0.5 a/ s (dv/dt) cr t vj = t vjm ;v dr = 2/3 v drm 1000 v/ s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm t p = 30 s 120 w i t = i tavm t p = 500 s60w p gav 8w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m6) 2.25-2.75/20-25 nm/lb.in. terminal connection torque (m6) 4.5-5.5/40-48 nm/lb.in. weight typical including screws 125 g v rsm v rrm type v dsm v drm v v version 1 version 1 900 800 mcc 132-08io1 mcd 132-08io1 1300 1200 mcc 132-12io1 mcd 132-12io1 1500 1400 mcc 132-14io1 mcd 132-14io1 1700 1600 mcc 132-16io1 mcd 132-16io1 1900 1800 mcc 132-18io1 mcd 132-18io1 data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. ixys reserves the right to change limits, test conditions and dimensions features international standard package direct copper bonded al 2 o 3 -ceramic base plate planar passivated chips isolation voltage 3600 v~ ul registered, e 72873 keyed gate/cathode twin pins applications motor control power converter heat and temperature control for industrial furnaces and chemical processes lighting control contactless switches advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits mcc 132 mcd 132 thyristor modules thyristor/diode modules mcd mcc 3671 542 31542 1 2 3 6 7 5 4 032
? 2000 ixys all rights reserved 2 - 4 symbol test conditions characteristic values i rrm , i drm t vj = t vjm ; v r = v rrm ; v d = v drm 10 ma v t , v f i t , i f = 300 a; t vj = 25 c 1.36 v v t0 for power-loss calculations only (t vj = 125 c) 0.8 v r t 1.5 m v gt v d = 6 v; t vj = 25 c 2.5 v t vj = -40 c 2.6 v i gt v d = 6 v; t vj = 25 c 150 ma t vj = -40 c 200 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd 10 ma i l t vj = 25 c; t p = 30 s; v d = 6 v 300 ma i g = 0.5 a; di g /dt = 0.5 a/ s i h t vj = 25 c; v d = 6 v; r gk = 200 ma t gd t vj = 25 c; v d = 1/2 v drm 2 s i g = 0.5 a; di g /dt = 0.5 a/ s t q t vj = t vjm ; i t = 160 a, t p = 200 s; -di/dt = 10 a/ s typ. 150 s v r = 100 v; dv/dt = 20 v/ s; v d = 2/3 v drm q s t vj = t vjm ; i t , i f = 300 a, -di/dt = 50 a/ s 550 c i rm 235 a r thjc per thyristor/diode; dc current 0.23 k/w per module other values 0.115 k/w r thjk per thyristor/diode; dc current see fig. 8/9 0.33 k/w per module 0.165 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type zy 180l (l = left for pin pair 4/5) ul 758, style 1385, type zy 180r (r = right for pin pair 6/7) csa class 5851, guide 460-1-1 dimensions in mm (1 mm = 0.0394") mcc mcd fig. 1 gate trigger characteristics fig. 2 gate trigger delay time mcc 132 mcd 132
? 2000 ixys all rights reserved 3 - 4 fig. 4 i 2 t versus time (1-10 ms) fig. 4a maximum forward current at case temperature fig. 5 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 6 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature mcc 132 mcd 132 fig. 3 surge overload current i tsm , i fsm : crest value, t: duration s t ms t 0.001 0.01 0.1 1 0 1000 2000 3000 4000 110 10 4 10 5 10 6 a 2 s i tsm a i 2 t t vj = 45c t vj = 125c 80 % v rrm t vj = 45c 50 hz t vj = 125c
? 2000 ixys all rights reserved 4 - 4 fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) mcc 132 mcd 132 r thjc for various conduction angles d: d r thjc (k/w) dc 0.230 180 0.244 120 0.255 60 0.283 30 0.321 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 r thjk for various conduction angles d: d r thjk (k/w) dc 0.330 180 0.344 120 0.355 60 0.383 30 0.421 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 4 0.1 1.29
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