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www.irf.com 1 7/27/11 IRFHS9351PBF hexfet power mosfet notes through are on page 2 applications charge and discharge switch for battery application system/load switch features and benefits
note form quantity irfhs9351trpbf pqfn 2mm x 2mm tape and reel 4000 irfhs9351tr2pbf pqfn 2mm x 2mm tape and reel 400 orderable part number package type standard pack features benefits low r dson ( 170m ) lower conduction losses low thermal resistance to pcb ( 19c/w) enable better thermal dissipation low profile ( 1.0 mm) results in increased power density compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 170 m i d (@t c = 25c) -3.4 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ -10v i d @ t c = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @ t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 1.4 0.01 0.9 max. -2.3 -4.1 -20 20 -30 -1.5 -5.1 -3.4 v w a c d2 3 g1 2 s1 1 4s2 5g2 6d1 top view d1 d2 fet1 fet2 2mm x 2mm dual pqfn

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. current limited by package. . pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. . g d s static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v v dss /t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) ??? 135 170 ??? 235 290 v gs(th ) ga te th resh old volt age -1. 3 -1.8 -2.4 v v gs(th) gate threshold voltage coefficient ??? -4.6 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 2.4 ??? ??? s q g total gate charge ??? 1. 9 ??? n c v ds = -15v,v gs = -4.5v,i d = - 3.1a q g total gate charge ??? 3. 7 ??? q gs gate-to-source charge ??? 0. 6 ??? q gd gate-to-drain charge ??? 1. 1 ??? r g ga te r esis tan ce ??? 17 ??? t d(on) turn-on delay time ??? 8.3 ??? t r rise tim e ??? 30 ??? t d(off) turn-off delay time ??? 6.3 ??? t f fall time ??? 7.9 ??? c iss input capacitance ??? 160 ??? c oss output capacitance ??? 39 ??? c rss reverse transfer c apacitance ??? 26 ??? diode char acteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pu lsed sou rce current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recove ry time ??? 20 30 n s q rr reverse recovery charge ??? 42 63 nc thermal resistance param eter units r jc (bottom) junction-to-case r jc (to p) junction-to-case r ja junction-to-ambient r ja junction-to-ambient (t<10s) 90 sta ti c dra in-to -s ou rc e on -re si s tan ce a ??? ??? ??? ??? -5.1 typ. na nc ns pf r g = 1 .8 see figs. 19a & 19b ? = 1.0khz v gs = 0v v ds = -25 v v ds = -10v, i d = -3.1a v ds = -24v, v gs = 0 v, t j = 125c v dd = -15v, v gs = -4.5v i d = -3.1a v ds = -15 v v gs = -20v v gs = 20v v gs = -10v m a t j = 25c, i f = -3.1a, v dd = -15v di/dt = 370/ s t j = 25c, i s = -3.1a, v gs = 0v showing the i nte gral re ve rse p-n junction diode. mosfet symbol i d = -3.1a v ds = -24v, v gs = 0 v conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -3.1a v gs = -4.5v, i d = -2.5a v ds = v gs , i d = -10 a ??? 170 c/w conditions -2 0 ??? ??? max. 19 75

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -8.0v -5.0v -4.5v -3.5v -3.3v -3.0v bottom -2.8v 60 s pulse width tj = 25c -2.8v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -8.0v -5.0v -4.5v -3.5v -3.3v -3.0v bottom -2.8v 60 s pulse width tj = 150c -2.8v 1 2 3 4 5 6 7 8 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -3.1a v gs = -10v 1 10 100 -v ds , drain-to-source voltage (v) 10 100 1000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v i d = -3.1a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , casetemperature (c) 0 1 2 3 4 5 6 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10ua

www.irf.com 5 fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 14 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 15. for p-channel hexfet power mosfets 0 5 10 15 20 25 -v gs, gate -to -source voltage (v) 100 200 300 400 500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -3.1a t j = 25c t j = 125c 0 2 4 6 8 -i d , drain current (a) 100 200 300 400 500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -10v vgs = -4.5v 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 p o w e r ( w )

6 www.irf.com fig 16a. gate charge test circuit fig 16b. gate charge waveform fig 17b. unclamped inductive waveforms fig 17a. unclamped inductive test circuit fig 18b. switching time waveforms fig 18a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v ' ( 1 ) $
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f

www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn package details pqfn part marking

8 www.irf.com pqfn tape and reel ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ir world headquarters: 101n. sepulveda, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/11 data and specifications subject to change without notice. core tape cover tape (width) 5.4 mm tolerance +/- 0.1 mm 9.5 mm +/- 0.1 mm width remark: - dimension above are typical dimensions. - cover tape thickness is 0.048mm +/- 0.005mm. - surface resistivity 10e5 < rs <10e9. table 2: msl1 (per ipc/jedec j-std-020d ?? ? ) rohs compliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level consumer ?? (per jedec jesd47f ??? guidelines )

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