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d a t a sh eet product speci?cation supersedes data of 1996 may 03 1999 apr 22 discrete semiconductors prll5817; prll5818; prll5819 schottky barrier diodes f page m3d121
1999 apr 22 2 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 features low switching losses fast recovery time guard ring protected hermetically sealed glass smd package. applications low power, switched-mode power supplies rectifying polarity protection. description the prll5817 to prll5819 types are schottky barrier diodes fabricated in planar technology, and encapsulated in sod87 hermetically sealed glass smd packages incorporating implotec tm(1) technology. (1) implotec is a trademark of philips. marking type number marking code prll5817 9 prll5818 9 prll5819 9 fig.1 simplified outline (sod87) and symbol. handbook, halfpage mam190 ka
1999 apr 22 3 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v r continuous reverse voltage prll5817 - 20 v prll5818 - 30 v prll5819 - 40 v v rsm non-repetitive peak reverse voltage prll5817 - 24 v prll5818 - 36 v prll5819 - 48 v v rrm repetitive peak reverse voltage prll5817 - 20 v prll5818 - 30 v prll5819 - 40 v v rwm crest working reverse voltage prll5817 - 20 v prll5818 - 30 v prll5819 - 40 v i f(av) average forward current t amb =60 c - 1a i fsm non-repetitive peak forward current t = 10 ms half sine wave; t j =t j max prior to surge: v r =0 - 25 a t stg storage temperature - 65 +175 c t j junction temperature - 125 c
1999 apr 22 4 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 electrical characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p = 300 m s; d = 0.02. thermal characteristics note 1. refer to sod87 standard mounting conditions. symbol parameter conditions min. typ. max. unit v f forward voltage see fig.2 prll5817 i f = 0.1 a -- 320 mv i f =1a -- 450 mv i f =3a -- 750 mv v f forward voltage see fig.2 prll5818 i f = 0.1 a -- 330 mv i f =1a -- 550 mv i f =3a -- 875 mv v f forward voltage see fig.2 prll5819 i f = 0.1 a -- 340 mv i f =1a -- 600 mv i f =3a -- 900 mv i r reverse current v r =v rrmmax ; note 1 - 0.5 1 ma v r =v rrmmax ; t j = 100 c - 510 ma c d diode capacitance v r = 4 v; f = 1 mhz prll5817 - 70 - pf prll5818 - 50 - pf prll5819 - 50 - pf symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 150 k/w
1999 apr 22 5 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 graphical data handbook, halfpage 01 5 0 1 mbe634 2 3 4 0.5 v f (v) i f (a) t j = 125 o c 25 o c fig.2 typical forward voltage. fig.3 prll817. maximum values steady state forward power dissipation as a function of the average forward current; a = i f(rms) /i f(av). 2 1 0 0 0.5 1.5 mbe642 1 (w) 0.5 p f(av) i f(av) (a) a = 3 2.5 1.57 1.42 1 2
1999 apr 22 6 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 fig.4 prll5818. maximum values steady state forward power dissipation as a function of the average forward current; a = i f(rms) /i f(av). 2 1 0 0 0.5 1.5 mbe641 1 (w) 0.5 p f(av) i f(av) (a) a = 3 2.5 1.57 1.42 1 2 fig.5 prll5819. maximum values steady state forward power dissipation as a function of the average forward current; a = i f(rms) /i f(av). 2 1 0 0 0.5 1.5 mbe643 1 (w) 0.5 p f(av) i f(av) (a) a = 3 2.5 1.57 1.42 1 2
1999 apr 22 7 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 fig.6 prll5817. maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to sod87 standard mounting conditions. 020 200 0 mbe635 100 10 v r (v) t j ( o c) v rwm v r d = 0.2 d = 0.5 fig.7 prll5817. reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to sod87 standard mounting conditions. 020 0.1 0 mbe640 0.05 p r 10 v r (v) (w) v rwm v r d = 0.5 d = 0.2 fig.8 prll5818. maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to sod87 standard mounting conditions. 040 200 0 mbe636 100 20 v r (v) t j ( o c) v rwm v r d = 0.2 d = 0.5 fig.9 prll5818. reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to sod87 standard mounting conditions. 040 0.1 0 mbe638 0.05 p r 20 v r (v) (w) v rwm v r d = 0.5 d = 0.2
1999 apr 22 8 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 fig.10 prll5819. maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to sod87 standard mounting conditions. 020 200 0 mbe637 100 10 v r (v) t j ( o c) v rwm v r d = 0.2 d = 0.5 fig.11 prll5819. reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to sod87 standard mounting conditions. 040 0.1 0 mbe639 0.05 p r 20 v r (v) (w) v rwm v r d = 0.5 d = 0.2
1999 apr 22 9 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. references outline version european projection issue date iec jedec eiaj sod87 100h03 99-03-31 hermetically sealed glass surface mounted package; implotec tm(1) technology; 2 connectors sod87 unit d mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 d1 h l dimensions (mm are the original dimensions) h d d 1 ll (2) 0 1 2 mm scale notes 1. implotec is a trademark of philips. 2. the marking indicates the cathode. ka
1999 apr 22 10 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 notes
1999 apr 22 11 philips semiconductors product speci?cation schottky barrier diodes prll5817; prll5818; prll5819 notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1999 sca63 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero 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488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy printed in the netherlands 115002/00/02/pp12 date of release: 1999 apr 22 document order number: 9397 750 05474

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