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description the gmm27316230etg is a 16m x 72bits synchronous dynamic ram module which is assembled 18 pieces of 16m x 4bits synchronous drams in 54 pin tsop ii, 2 pieces of 16 bits register in 48 pin tssop, one clock distribution pll in 24 pin sop and one 2048 bit eeprom in 8 pin tssop package mounted on a 168 pin printed circuit board with decoupling capacitors. the gmm27316230etg is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others which are requested compact size. the gmm27316230etg provides common data inputs and outputs. gmm27316230etg (double side) features pin name ck0, 1, 2, 3 cke0 s0, 2 ras cas we a0 ~ a11 ba0,1 rege dq0 ~ 63 cb0 ~ 7 dqmb0 ~ 7 v cc v ss nc v ref sda scl sa0 ~ 2 wp du clock input clock enable chip select row address strobe column address strobe write enable address input bank address input register enable data input / output check bits data input / output mask power for internal circuit ground for internal circuit no connect power supply for reference serial data input/ output serial clock address in eeprom write protect for spd don't use * pc133/pc100/pc66 compatible - 7(143mhz)/ - 75(133mhz)/ - 8(125mhz) - 7k(pc100,2 - 2 - 2)/ - 7j(pc100,3 - 2 - 2) * 3.3v ? 0.3v power supply * maximum clock frequency 100/125/133/143 mhz * lvttl interface * burst read/write operation and burst read/ single write operation capability * programmable burst length ; 1, 2, 4, 8, full page * programmable burst sequence sequential / interleave * full page burst length capability sequential burst burst stop capability * programmable cas latency ; 2, 3 * cke power down mode * input / output data masking * 4096 refresh cycles / 64ms * auto refresh / self refresh capability * serial presence detect with eeprom - 1 - 16 mx72 bits pc100/pc133 sdram registered dimm based on 8mx8 sdram with lvttl, 4 banks & 4k refresh gmm27316230etg this document is a general product description and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no patent licenses are implied. rev. 1.1/apr.01
gmm27316230etg rev. 1.1/apr.01 pin symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 pin configuration pin symbol pin symbol pin symbol pin symbol pin symbol 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 v ss dq32 dq33 dq34 dq35 v cc dq36 dq37 dq38 dq39 dq40 v ss dq41 dq42 dq43 dq44 dq45 v cc dq46 dq47 cb4 cb5 v ss nc nc v cc cas dqmb4 dq18 dq19 v cc dq20 nc *v ref , nc *cke1 v ss dq21 dq22 dq23 v ss dq24 dq25 dq26 dq27 v cc dq28 dq29 dq30 dq31 v ss ck2 nc wp sda scl v cc dqmb1 s0 du v ss a0 a2 a4 a6 a8 a10/ap ba1 v cc v cc ck0 v ss du s2 dqmb2 dqmb3 du v cc nc nc cb2 cb3 v ss dq16 dq17 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 dqmb5 *s1 ras v ss a1 a3 a5 a7 a9 ba0 a11 v cc ck1 *a12 v ss cke0 *s3 dqmb6 dqmb7 *a13 v cc nc nc cb6 cb7 v ss dq48 dq49 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 dq50 dq51 v cc dq52 nc *v ref , nc rege v ss dq53 dq54 dq55 v ss dq56 dq57 dq58 dq59 v cc dq60 dq61 dq62 dq63 v ss ck3 nc sa0 sa1 sa2 v cc v ss dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 dq8 v ss dq9 dq10 dq11 dq12 dq13 v cc dq14 dq15 cb0 cb1 v ss nc nc v cc we dqmb0 * these pins are not used in this module - 2 -
gmm27316230etg rev. 1.1/apr.01 block diagram v cc v ss capacitor one 0.0022uf and one 0.22uf per sdram a0 a1 a2 sa2 serial pd sda scl u0 ~ u17 u0 ~ u17 vss wp 47 kohm ck1,2,3 12 pf 10 ohm rege vcc 10 kohm a0 ~ a11, ba0,1 ras cas cke0, dqmb0~7 we u0 - u17 u0 - u17 u0 - u17 u0 - u17 u0 - u17 register s0,2 u0 - u17 dq0 dq1 dq2 dq3 u0 u1 u2 u3 u9 u10 u11 u12 dqm cs dqm cs dqm cs dqm cs dqm cs dqm cs dqm cs dqm cs dqmb0 dqmb1 dqmb4 dqmb5 u5 u6 u7 u8 dqm cs dqm cs dqm cs dqm cs s2 dqmb2 dqmb3 dqm cs dqm cs u4 u13 s0 dq4 dq5 dq6 dq7 dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 cb0 cb1 cb2 cb3 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 cb4 cb5 cb6 cb7 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 u14 u15 u16 u17 dqm cs dqm cs dqm cs dqm cs dqmb6 dqmb7 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 dq0 dq1 dq2 dq3 pll ck0 3 sdrams 3 sdrams 3 sdrams 3 sdrams 3 sdrams 3 sdrams 2 registers 12 pf pck sa0 sa1 - 3 -
gmm27316230etg rev. 1.1/apr.01 pin description pin name description ck0, 1, 2, 3 (input pins) ck is the master clock input to this pin. the other input signal s are referred at ck rising edge. cke0 (input pin) this pin determines whether or not the next ck is valid. if cke is high, the next ck rising edge is valid. if cke is low, the next ck rising edge is invalid. this pin is used for power - down and clock suspend modes. when s is low, the command input cycle becomes valid. when s is high, all inputs are ignored. however, internal operations (bank active, burst operations, etc.) are held. s0, 2 (input pins) although these pin names are the same as those of conventional drams , they function in a different way. these pins define operation commands (read, write, etc.) depending on the combination of the ir voltage levels. for details, refer to the command operation sect ion. ras, cas and we (input pins) a0 ~ a11 (input pins) row address (ax0 to ax11) is determined by a0 to a11 level at th e bank active command cycle ck rising edge. column address is determined by a0 to a8 level at the read or write command cycle ck rising edge. and this column address becomes burst access start address. a10 defines the precharge mode. when a10 = high at the precharge command cycle, both banks are precharged . but when a10 = low at the precharge command cycle, only the bank that is selected by ba0 is precharged . ba0,1 (input pin) ba0,1 are bank select signal. if ba0 is low and ba1 is high, ban k 0 is selected. if ba0 is high and ba1 is low, bank 1 is selected. if ba0 is low and ba1 is high, bank 2 is selected. if ba0 is high and ba1 is high, bank 3 is selected. dq0 ~ dq63 cb0 ~ cb7 (i/o pins) data is input and output from these pins. these pins are the sam e as those of a conventional drams . data is not latched in the register. dqmb0 ~ dqmb7 (input pins) dqmb controls input/output buffers. *read operation: if dqmb is high, the output buffer becomes high - z. if the dqmb is low, the output buffer becomes low - z. *write operation: if dqmb is high, the previous data is held (th e new data is not written). if dqmb is low, the data is written. v cc (power supply pins) 3.3 v is applied. (v cc is for the internal circuit) v ss (power supply pins) ground is connected. (v ss is for the internal circuit) nc no connection pins. rege if rege input is high, permits the dimm to operate in `register ed mode`. if rege input is low, permits the dimm to operate in `buffered mode`. - 4 -
gmm27316230etg rev. 1.1/apr.01 registered dimm operation 1. all control and address signals are registered on - dimm register and hence delayed by one cycle in arriving at the sdrams . but data is not registered in the register. 2. cas latency defines the delay from when a read command is reg istered on a rising clock edge to when the data from that read command becomes available at the outputs. do not confuse dimm cas latency with the sdram cas latency which is one clock less . absolute maximum ratings notes : 1. respect to v ss symbol value unit note parameter v t - 0.5 to vcc +0.5 ( <= 4.6 (max)) v 1 voltage on any pin relative to v ss v cc - 0.5 to +4.6 v 1 supply voltage relative to v ss i out 50 ma short circuit output current p t 1.0 w power dissipation topr 0 to +70 c operating temperature tstg - 55 to +125 c storage temperature notes : 1. all voltage referred to v ss . 2. v ih (max) = 5.6v for pulse width <= 3ns 3. v il (min) = - 2.0v for pulse width <= 3ns recommended dc operating conditions ( ta = 0 to + 70 c ) symbol min unit note v cc , v ccq v 1 v ss , v ssq v input high voltage v ih v 1, 2 input low voltage v il v 1,3 supply voltage parameter max 3.0 3.6 0 0 2.0 vcc +0.3 - 0.3 0.8 - 5 -
gmm27316230etg rev. 1.1/apr.01 dc characteristics ( ta = 0 to 70c, v cc , v ccq = 3.3 v +/ - 0.3 v, v ss , v ssq = 0 v) parameter symbol unit test conditions notes operating current standby current in power down i cc2p self refresh current i cc6 ma v ih >=v cc - 0.2 v il <=0.2v 7 burst length= 1 t rc = min 1, 2, 3 cke = v il , t ck = 12 ns 5 i cc1 ma ma standby current in power down (input signal stable) i cc2ps cke=v il , t ck = infinity 6 ma standby current in non power down (cas latency=2) i cc2n cke,cs = v ih , t ck = 12ns 4 ma standby current in non power down (input signal stable) i cc2ns cke = v ih , t ck = infinity 4 ma active standby current in power down i cc3p cke = v il , t ck = 12 ns , dq = high - z 1,2,5 ma active standby current in power down (input signal stable) i cc3ps cke = v il , t ck = infinity 2,6 ma active standby current in non power down i cc3n cke,cs = v ih , t ck = 12 ns , dq = high - z 1,2,4 ma active standby current in non power down (input signal stable) i cc3ns cke = v ih , t ck = infinity 2,8 ma burst operating current i cc4 t ck = min bl = 4 1,2,3 ma ( cl= 2 ) i cc4 ma ( cl= 3 ) refresh current t rc = min 3 i cc5 ma - 8 max max - 7 j 1200 350 - 75 max 1300 max - 7 k - 7 max 18 40 40 280 80 110 80 1600 550 1800 1500 1600 1500 1800 1600 1600 1500 1800 1600 - 6 -
gmm27316230etg rev. 1.1/apr.01 notes : 1. i cc depends on output load condition when the device is selected. i cc ( max) is specified at the output open condition. 2. one bank operation. 3. addresses are changed once per one cycle. 4. addresses are changed once per two cycles. 5. after power down mode, clk operating current. 6. after power down mode, no clk operating current . 7. after self refresh mode set, self refresh curr ent. 8. input signals are v ih or v il fixed. input leakage current i li ua 0 <= vin <= v cc output leakage current i lo ua 0 <= vout <= v cc dq = disable output high voltage v oh v i oh = - 2 ma output low voltage v ol v i ol =2 ma - 1 1 - 1.5 1.5 - 0.4 parameter symbol unit test conditions notes min max - 7, - 75, - 8, - 7 k, - 7j 2.4 - capacitance ( ta = 25c, v cc , v ccq = 3.3v +/ - 0.3v) note : 1. capacitance measured with boonton meter or effective capacitance measuring method. 2. dqmb = v ih to disable dout . 3. this parameter is sampled and not 100% tested. symbol parameter min max unit notes c i1 input capacitance (a0 ~ a11, ba0, ba1) 7 10 pf 1, 3 c i2 input capacitance (ras, cas, we, cke0) 13 pf c i3 input capacitance (ck0, ck1, ck2, ck3) 15 pf c i4 input capacitance (s0,s2) 6 pf c i/o i/o capacitance (dq0 ~ 63, cb0 ~ 7) 10 pf 18 35 10 14 1, 3 1, 3 1, 3 1, 2, 3 c i6 input capacitance (dqmb0,1,2,3,4,5,6,7) 6 pf 10 1, 3 - 7 -
gmm27316230etg rev. 1.1/apr.01 ac characteristics ( ta = 0 to 70 c , v cc , v ccq = 3.3 v +/ - 0.3 v, v ss , v ssq = 0 v) symbol unit notes t ck t ck parameter system clock cycle time ( cl=2) ( cl=3) ns 1 t ckh ns 1 clk high pulse width t ckl ns 1 clk low pulse width t ac t ac access time from clk ( cl=2) ( cl=3) ns 1, 2 t oh ns 1, 2 data - out hold time t lz ns 1, 2, 3 clk to data - out low impedance t hz clk to data - out high impedance ( cl = 2,3 ) ns 1, 4 t ds ns 1 data - in setup time t dh ns 1 data - in hold time t as ns 1 address setup time t ah ns 1 address hold time t ces ns 1, 5 cke setup time t cesp ns 1 cke setup time for power down exit t ceh ns 1 cke hold time t cs ns 1 command (cs, ras, cas, we, dqm) setup time t rc ns 1 ref/active to ref/active command period t ch ns 1 command (cs, ras, cas, we, dqm) hold time t ras ns 1 active to precharge command period t rcd ns 1 active command to column command (same bank) t rp ns 1 precharge to active command period - 7 k min max 10 - 10 - 3 - 3 - - 6 - 6 3 - 2 - - 6 2 - 1 - 2 - 1 - 2 - 2 - 1 - 2 - 70 - 1 - 50 120000 20 - 20 - - 7 j min max 10 - 15 - 3 - 3 - - 6 - 8 3 - 2 - - 6 2 - 1 - 2 - 1 - 2 - 2 - 1 - 2 - 70 - 1 - 50 120000 20 - 20 - - 8 min max 8 - 10 - 3 - 3 - - 6 - 6 3 - 2 - - 6 2 - 1 - 2 - 1 - 2 - 2 - 1 - 2 - 68 - 1 - 48 120000 20 - 20 - - 75 min max 7.5 - 10 - 2.5 - 2.5 - - 5.4 - 6 2.7 - 1.5 - - 5.4 1.5 - 0.8 - 1.5 - 0.8 - 1.5 - 1.5 - 0.8 - 1.5 - 65 - 0.8 - 45 120000 20 - 20 - - 7 min max 7 - 10 - 2.5 - 2.5 - - 5.4 - 6 2.7 - 1.5 - - 5.4 1.5 - 0.8 - 1.5 - 0.8 - 1.5 - 1.5 - 0.8 - 1.5 - 62 - 0.8 - 42 120000 20 - 20 - - 8 -
gmm27316230etg rev. 1.1/apr.01 ac characteristics ( ta = 0 to 70 c , v cc , v ccq = 3.3 v +/ - 0.3 v, v ss , v ssq = 0 v) (continued) notes : 1. ac measurement assumes t t = 1ns. reference level for timing of input signals is 1.40v. if t t is longer than 1ns,transition time compensation should be consi dered. 2. access time is measured at 1.40v. load condition is c l = 50pf without termination. 3. t lz (min)defines the time at which the outputs achieves the low impe dance state. 4. t hz (max)defines the time at which the outputs achieves the high imp edance state. 5. t ces define cke setup time to cke rising edge except power down exit command. 6. the on - dimm pll must be given enough clock cycles to stabilize ( t stab ) before any operation can be guaranteed. test condition ? input and output - timing reference levels: 1.4v ? input waveform and output load: see following figures 20% t t t t 0.4 v 2.4 v i/o 80% open input c l symbol notes parameter 1 t rrd 1 active (a) to active (b) command period t ref refresh period t rwl write recovery or data - in to precharge lead time unit ns ns ms - 8 min max 8 - 16 - - 64 - 7 k min max 10 - 20 - - 64 - 7 j min max 10 - 20 - - 64 - 75 min max 7.5 - 15 - - 64 - 7 min max 7 - 14 - - 64 t stab us 6 pll stabilization time 200 - 200 - 200 - 200 - 200 - - 9 -
gmm27316230etg rev. 1.1/apr.01 relationship between frequency and minimum latency notes l rcd 1 active command to column command (same bank) l rc = [ l ras + l rp ], 1 active command to active command (same bank) l ras active command to precharge command (same bank) l rp 1 precharge command to active command (same bank) l rwl 1 write recovery or last data - in to precharge command (same bank) l rrd 1 active command to active command (different bank) l srex self refresh exit time l apw = [ l rwl + l rp ], 1 last data in to active command (auto precharge , same bank) l sec = [ l rc ] self refresh exit to command input l hzp precharge command to high impedance l hzp ( cl=2) ( cl=3) l apr last data out to active command (auto precharge ) (same bank) l ep last data out to precharge (early precharge ) l ep ( cl=2) ( cl=3) l ccd column command to column command l wcd write command to data in latency l did dqm to data in l dod dqm to data out l pec power down exit to command input l cle cke to clk disable l rsa register set to active command l cdd parameter t ck ( ns ) frequency(mhz) 1 cs to command disable symbol - 7 j 100 2 7 5 10 2 1 2 1 3 7 - 3 1 - - 2 1 0 0 2 1 1 1 0 - 75 133 3 9 6 7.5 3 1 2 1 4 9 - 3 1 - - 2 1 0 0 2 1 1 1 0 - 8 125 3 9 6 8 3 1 2 1 4 9 - 3 1 - - 2 1 0 0 2 1 1 1 0 100 2 7 5 10 2 1 2 2 3 7 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 66 2 6 4 15 2 1 2 2 3 6 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 - 7 143 3 9 6 7 3 1 2 1 4 9 - 3 1 - - 2 1 0 0 2 1 1 1 0 100 2 7 5 10 2 1 2 1 3 7 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 - 7 k 100 2 7 5 10 2 1 2 1 3 7 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 100 2 7 5 10 2 1 2 1 3 7 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 100 2 7 5 10 2 1 2 1 3 7 2 3 1 - 1 - 2 1 0 0 2 1 1 1 0 - 10 -
gmm27316230etg rev. 1.1/apr.01 relationship between frequency and minimum latency notes : 1. l rcd to l rrd are recommended value. symbol notes l bsr burst stop to output valid data hold l bsr ( cl=2) ( cl=3) l bsh burst stop to output high impedance l bsh ( cl=2) ( cl=3) l bsw burst stop to write data ignore parameter t ck ( ns ) frequency(mhz) - 7 k - 7 j - 7 143 7 - 2 - 3 0 - 8 125 8 - 2 - 3 0 100 10 1 2 2 3 0 100 10 - 2 - 3 0 66 15 1 2 2 3 0 - 75 133 7.5 - 2 - 3 0 100 10 1 2 2 3 0 100 10 1 2 2 3 0 100 10 1 2 2 3 0 100 10 1 2 2 3 0 - 11 -
gmm27316230etg rev. 1.1/apr.01 package dimension note : 1. tolerances on all dimensions ? 5 (0.127) unless otherwise specified. 2. thickness includes plating and / or metallization . 85 168 1 84 5250(133.35) 5013.78(127.35) 1700(43.18) 1450(36.83) 2150(54.61) 450(11.43) 250(6.35) 700(17.78) 157.48(4.0) 1650(41.91) " c" " b" " a" 4550(115.57) detail "b" detail "a" 5.9(0.15) 100(2.54) min. 39.37(1.0) 50(1.27) 78.74(2.0) 39.37(1.0) detail "c" 78.74(2.0) 122.83(3.12) 39.37(1.0) 125(3.175) 125(3.175) unit: mil (mm) * (1 mil = 1/1000 inches) r78.74 (2.0) r78.74 (2.0) ( front side) ( rear side) 50(1.27) 157.48(4.0) min. 157.48(4.0) max. - 12 -

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