1 2 3 2SC4081 sot-323(sc-70) 1 base collector emitter 3 2 general purpose transistor npn silicon l e a d( p b) - f r ee p b h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n 1/3 10-jul-08 fe a tures excellent h f e lin ear i ty complemen t s the 2a 15 76a maximum r a tings ( t a =2 5 un l ess otherwise noted) v cb o col l ector-ba s e v o l t age 60 v c e o col l ector-emitter v o l t age v e b o emitter-base voltage i c collector current -continuous p c collector power dissipation t j junction temperature t s t g storage temperature electrica l char a cteristics ( t amb=25 unl ess o t h e r w i s e s p ec i f i e d ) p arame t er s y m b o l t e st c ond i t ion s mi n t yp ma x un it c o llect o r - b ase b r eak d o w n v o l t a g e v ( b r)c b o i c = 5 0 a, i e = 0 60 v c o llect o r -emitter b r e a k d o w n v o l t a g e v ( b r)c e o i c = 1 ma, i b = 0 50 v emitter- b a s e b r eak d o w n v o l t a g e v ( b r ) eb o i e = 5 0 a, i c = 0 7 v c o ll ect o r c u t- o ff c u rre n t i c b o v c b = 60 v ,i e = 0 0.1 a emitter cut-off current i eb o v e b = 7 v , i c = 0 0.1 a dc c u r r e n t g a i n h fe(1) v c e = 6 v , i c = 1 ma 120 560 c o ll ect o r -em i tter sat u r at i on v o l t a g e v c e (s a t ) i c = 50ma,i b = 5 ma 0 . 4 v t r a n s itio n fr e qu e n c y f t v c e = 12 v ,i c = 2 ma,f = 30 m h z 180 m h z c o llect o r ou t p u t ca p aci t a n ce c o b v c b 12 v ,i e = 0 ,f=1mhz 3.5 p f classific a tion of h fe(1 ) ran k s r q ra nge 120 - 270 180 - 390 270 - 560 marking s b r b q b v 50 v 7 v 150 ma 200 150 -55 to +150 mw par a met e r symbol v a lue uni t s
2SC4081 h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n 2/3 10-jul-08 weitron
h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n 3/3 2SC4081 10-jul-08 weitron
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