1 transistor 2sd1149 silicon npn epitaxial planer type for low-frequency amplification n features l high foward current transfer ratio h fe . l low collector to emitter saturation voltage v ce(sat) . l high emitter to base voltage v ebo . l mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base jedec:toC236 2:emitter eiaj:scC59 3:collector mini type package 2.8 +0.2 ?.3 1.5 +0.25 ?.05 0.65 0.15 0.65 0.15 3 1 2 0.95 0.95 1.9 0.2 0.4 +0.1 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.1 0.16 +0.1 ?.06 1.45 0.1 to 0.3 2.9 +0.2 ?.05 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 100 100 15 50 20 200 150 C55 ~ +150 unit v v v ma ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t conditions v cb = 60v, i e = 0 v ce = 60v, i b = 0 i c = 10 m a, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 2ma i c = 10ma, i b = 1ma v cb = 10v, i e = C2ma, f = 200mhz min 100 100 15 400 typ 0.05 100 max 100 1 1200 0.2 unit na m a v v v v mhz marking symbol : 1v *1 h fe1 rank classification rank r s h fe 400 ~ 800 600 ~ 1200 marking symbol 1vr 1vs
2 transistor p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb nv i c nv v ce 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 80 60 20 50 70 40 10 30 ta=25?c 20 m a 30 m a 40 m a 50 m a 60 m a 80 m a 10 m a i b =100 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 02.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce =10v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 1800 1500 1200 900 600 300 v ce =10v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 200 160 120 80 40 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 0.01 0.03 0.1 0.3 1 0 100 80 60 40 20 v ce =10v g v =80db function=flat ta=25?c 5k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 1 3 10 30 100 0 100 80 60 40 20 i c =1ma g v =80db function=flat ta=25?c 5k r g =100k 22k collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) 2sd1149 1 3 10 30 100 0 6 5 4 3 2 1 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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