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| savantic semiconductor product specification silicon npn power transistors 2N6383 2n6384 2n6385 description with to-3 package complement to type 2n6648/6649/6650 darlington high dc current gain applications designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6383 40 2n6384 60 v cbo collector-base voltage 2n6385 open emitter 80 v 2N6383 40 2n6384 60 v ceo collector-emitter voltage 2n6385 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a i b base current 0.25 a p d total power dissipation t c =25 100 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.75 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6383 2n6384 2n6385 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6383 40 2n6384 60 v ceo(sus) collector-emitter sustaining voltage 2n6385 i c =0.2a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =10ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =10a ;i b =100ma 3.0 v v be-1 base-emitter on voltage i c =5a ; v ce =3v 2.8 v v be-2 base-emitter on voltage i c =10a ; v ce =3v 4.5 v 2N6383 v ce =40v; i b =0 2n6384 v ce =60v; i b =0 i ceo collector cut-off current 2n6385 v ce =80v; i b =0 1.0 ma 2N6383 v ce =40v; v be =-1.5v t c =125 0.3 3.0 2n6384 v ce =60v; v be =-1.5v t c =125 0.3 3.0 i cex collector cut-off current 2n6385 v ce =80v; v be =-1.5v t c =125 0.3 3.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 ma h fe-1 dc current gain i c =5a ; v ce =3v 1000 20000 h fe-2 dc current gain i c =10a ; v ce =3v 100 c ob output capacitance i e =0; v cb =10v;f=1mhz 200 pf savantic semiconductor product specification 3 silicon npn power transistors 2N6383 2n6384 2n6385 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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