hl6319g/20g algainp laser diodes ade-208-479d (z) 5th edition dec. 2000 description the hl6319g/20g are 0.63 m m band algainp laser diodes with a multi-quantum well (mqw) structure. they are suitable as light sources for laser levelers and optical equipment for measurement. application laser levelers measurement features visible light output: 635 nm typ (nearly equal to he-ne gas laser) optical output power: 10 mw cw low operating current: 95 ma max low operating voltage: 2.7 v max tm mode oscillation ld ld pd pd 1 1 3 3 2 internal circuit hl6319g internal circuit hl6320g package type hl6319g/20g: g2 2
hl6319g/20g 2 absolute maximum ratings (t c = 25?) item symbol rated value unit optical output power p o 10 mw ld reverse voltage v r(ld) 2v pd reverse voltage v r(pd) 30 v operating temperature topr ?0 to +50 c storage temperature tstg ?0 to +85 c optical and electrical characteristics (t c = 25?) item symbol min typ max unit test conditions optical output power p o 10 mw kink free threshold current ith 20 50 75 ma operating current i op 7095ma p o = 10 mw operating voltage v op 2.7 v p o = 10 mw slope efficiency h s 0.3 0.5 0.7 mw/ma 6 (mw) / (i (8mw) ?i (2mw) ) beam divergence parallel to the junction q // 5 8 11 deg. p o = 10 mw beam divergence parpendicular to the junction q^ 25 31 37 deg. p o = 10 mw astigmatism a s ? m mp o = 10 mw, na = 0.55 lasing wavelength l p 625 635 640 nm p o = 10 mw monitor current i s 0.05 0.17 0.30 ma p o = 10 mw, v r(pd) = 5 v
hl6319g/20g 3 typical characteristic curves optical output power, p o (mw) 10 8 6 4 2 0 0 100 200 foward current, i f (ma) 50 c 25 c optical output power vs. foward current optical output power, p o (mw) monitor current, i s (m a ) 0.20 0.15 0.10 0.05 0 246810 v r(pd) = 5 v t c = 25 c monitor current vs. optical output power t c = - 10 c 0.2 0.4 0.6 0.8 1.0 - 40 - 20 0 20 40 angle, q (deg.) relative intensity 0 parallel perpendicular far field pattern p o = 10 mw t c = 25 c - 30 - 10 10 30 lasing spectrum wavelength, l p (nm) 625 630 635 640 645 650 relative intensity t c = 25 c p o = 10 mw p o = 1 mw p o = 5 mw
hl6319g/20g 4 typical characteristic curves (cont) case temperature, t c ( c) case temperature, t c ( c) - 10 0 10 20 30 40 200 100 20 threshould current, ith (ma) threshold current vs. case temperature 50 50 slope efficiency vs. case temperature - 10 0 40 10 20 30 50 slope efficiency, h s (mw/ma) 0 0.2 0.4 0.6 0.8 1.0 monitor current vs. case temperature case temperature, t c ( c) - 10 010 20 30 40 monitor current, i s (ma) 0 0.1 0.2 0.3 0.4 50 lasing wavelength vs. case temperature 01020304050 lasing wavelength, l p (nm) 630 635 645 650 640 - 10 case temperature, t c ( c) p o = 10 mw p o = 10 mw v r(pd) = 5 v
hl6319g/20g 5 typical characteristic curves (cont) 8 6 4 2 0 02 6 4 810 optical output power, p o (mw) astigmastism, a s ( m m) astigmastism vs. optical output power 10 t c = 25 c na = 0.55 polarization ratio vs. optical output power optical output power, p o (mw) 0246810 polarization ratio 0 200 400 600 800 t c = 25 c na = 0.4 100 80 60 40 20 0 survival rate (%) applied voltage (kv) electrostatic destruction (reverse) 023 1 reverse(ansi method) n = 5 pcs judgment : d i o 10% 0 500 1000 100 80 60 survival rate (%) 40 20 0 applied voltage (v) electrostatic destruction (forward) forward(ansi method) n = 5 pcs judgment : d i o 10%
hl6319g/20g 6 package dimensions hitachi code jedec eiaj mass (reference value) ld/g2 1.1 g unit: mm 1 2 3 1 2 3 9.0 +0 ?.025 f 1.0 0.1 0.4 +0.1 ? (0.65) (90 ) f 7.2 +0.3 ?.2 f f 6.2 0.2 ( 2.0) f emitting point 2.45 1.5 0.1 9 1 3 ? 0.45 0.1 3.5 0.2 0.3 glass f 2.54 0.35
hl6319g/20g 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent.
hl6319g/20g 8 hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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