3-55 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls 14a, 360v n-channel, logic level, voltage clamping igbts packages jedec to-220ab jedec to-262aa jedec to-263ab terminal diagram n-channel enhancement mode emitter collector gate collector (flange) a emitter collector gate collector (flange) emitter gate collector (flange) a a m emitter gate r 2 r 1 collector features logic level gate drive internal voltage clamp esd gate protection ? j = 175 o c ignition energy capable description this n-channel igbt is a mos gated, logic level device which is intended to be used as an ignition coil driver in auto- motive ignition circuits. unique features include an active voltage clamp between the collector and the gate which pro- vides self clamped inductive switching (scis) capability in ignition circuits. internal diodes provide esd protection for the logic level gate. both a series resistor and a shunt resister are provided in the gate circuit. the development type number for this device is ta49021. packaging availability part number package brand hgtp14n36g3vl to-220ab 14n36gvl hgt1s14n36g3vl to-262aa 14n36gvl hgt1s14n36g3vls to-263ab 14n36gvl note: when ordering, use the entire part number. add the suf? 9a to obtain the to-263ab variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. june 1995 file number 4008 absolute maximum ratings t c = +25 o c, unless otherwise speci?d hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls units collector-emitter bkdn voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv cer 390 v emitter-collector bkdn voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ecs 24 v collector current continuous at v ge = 5v, t c = +25 o c. . . . . . . . . . . . . . . . . . . . . . . i c25 18 a at v ge = 5v, t c = +100 o c. . . . . . . . . . . . . . . . . . . . . .i c100 14 a gate-emitter voltage (note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 10 v inductive switching current at l = 2.3mh, t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . .i scis 17 a at l = 2.3mh, t c = + 175 o c . . . . . . . . . . . . . . . . . . . . . .i scis 12 a collector to emitter avalanche energy at l = 2.3mh, t c = +25 o c. . . . . . . . . . . . . . . e as 332 mj power dissipation total at t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 100 w power dissipation derating t c > +25 o c. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . .t j , t stg -40 to +175 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t l 260 o c electrostatic voltage at 100pf, 1500 ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . esd 6 kv note: may be exceeded if i gem is limited to 10ma.
3-56 speci?ations hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls electrical speci?ations t c = +25 o c, unless otherwise speci?d parameters symbol test conditions limits units min typ max collector-emitter breakdown voltage bv cer i c = 10ma, v ge = 0v r ge = 1k ? t c = +175 o c 320 355 400 v t c = +25 o c 330 360 390 v t c = -40 o c 320 350 385 v gate-emitter plateau voltage v gep i c = 7a, v ce = 12v t c = +25 o c - 2.7 - v gate charge q g(on) i c = 7a, v ce = 12v t c = +25 o c - 24 - nc collector-emitter clamp breakdown voltage bv ce(cl) i c = 7a r g = 1000 ? t c = +175 o c 350 380 410 v emitter-collector breakdown voltage bv ecs i c = 10ma t c = +25 o c2428-v collector-emitter leakage current i cer v ce = 250v r ge = 1k ? t c = +25 o c-- 25 a t c = +175 o c - - 250 a collector-emitter saturation voltage v ce(sat) i c = 7a v ge = 4.5v t c = +25 o c - 1.25 1.45 v t c = +175 o c - 1.15 1.6 v i c = 14a v ge = 5v t c = +25 o c - 1.6 2.2 v t c = +175 o c - 1.7 2.9 v gate-emitter threshold voltage v ge(th) i c = 1ma v ce = v ge t c = +25 o c 1.3 1.8 2.2 v gate series resistance r 1 t c = +25 o c - 75 - ? gate-emitter resistance r 2 t c = +25 o c 102030k ? gate-emitter leakage current i ges v ge = 10v 330 500 1000 a gate-emitter breakdown voltage bv ges i ges = 2ma 12 14 - v current turn-off time-inductive load t d(off)i + t f(off)i i c = 7a, r l = 28 ? r g = 25 ? , l = 550 h, v cl = 300v, v ge = 5v, t c = +175 o c -7- s inductive use test i scis l = 2.3mh, v g = 5v, t c = +175 o c12--a t c = +25 o c17--a thermal resistance r jc - - 1.5 o c/w
3-57 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls typical performance curves figure 1. transfer characteristics figure 2. saturation characteristics figure 3. collector-emitter current as a function of saturation voltage figure 4. collector-emitter current as a function of saturation voltage figure 5. saturation voltage as a function of junction temperature figure 6. saturation voltage as a function of junction temperature i ce , collector-emitter current (a) v ge , gate-to-emitter voltage (v) pulse duration = 250 s, duty cycle <0.5%, v ce = 10v 20 15 10 5 0 25 2 1345 +25 o c +175 o c -40 o c i ce , collector-emitter current (a) 40 20 v ce , collector-to-emitter voltage (v) pulse duration = 250 s, duty cycle <0.5%, t c = +25 o c 02 46810 10v 5.0v 4.5v 3.0v 2.5v 4.0v 3.5v 10 0 30 4 v ce(sat) , saturation voltage (v) i ce , collector emitter current (a) 25 20 15 10 5 0 30 5 3 2 1 0 t c = +175 o c v ge = 5.0v v ge = 4.0v v ge = 4.5v 35 10 +25 o c i ce , collector emitter current (a) v ce(sat) , saturation voltage (v) +175 o c -40 o c 15 20 25 30 35 0 5 01 234 5 v ge = 4.5v v ce(sat) , saturation voltage (v) t j , junction temperature ( o c) -25 +25 +75 +125 +175 1.25 1.15 1.05 1.35 v ge = 4.0v v ge = 4.5v v ge = 5.0v i ce = 7a t j , junction temperature ( o c) v ce(sat) , saturation voltage (v) -25 +25 +75 +125 +175 2.00 1.75 1.50 v ge = 4.5v v ge = 4.0v v ge = 5.0v i ce = 14a 2.25
3-58 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls figure 7. collector-emitter current as a function of case temperature figure 8. normalized threshold voltage as a function of junction temperature figure 9. leakage current as a function of junction temperature figure 10. turn-off time as a function of junction temperature figure 11. self clamped inductive switching current as a function of inductance figure 12. self clamped inductive switching energy as a function of inductance typical performance curves (continued) +25 +50 +75 +125 +150 t c , case temperature ( o c) i ce , collector-emitter current (a) 0 +100 +175 2 4 6 8 10 12 16 18 v ge = 5v 14 20 t j , junction temperature ( o c) -25 +25 +75 +125 +175 v ge(th), normalized threshold voltage 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i ce = 1ma t j , junction temperature ( o c) leakage current ( a) 1e-1 1e0 1e1 1e2 1e3 1e4 +20 +60 +100 +140 +180 v ecs = 20v v ces = 250v t j , junction temperature ( o c) t (off)i, turn off time ( s) 6.0 5.0 4.5 4.0 3.5 3.0 +25 +50 + 75 +100 +150 +175 +125 5.5 6.5 v ce = 300v, v ge = 5v r ge = 25 ? , l = 550 h 7.0 r l = 37 ? , i ce = 7a l, inductance (mh) 0 2 4 6 8 10 20 10 i c , inductive switching current (a) 15 5 25 +25 o c +175 o c v ge = 5v 0 2 4 6 8 10 l , inductance (mh) e as , energy (mj) 150 200 250 300 350 400 450 500 550 600 650 +25 o c +175 o c v ge = 5v
3-59 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls figure 13. capacitance as a function of collector- emitter voltage figure 14. gate charge waveforms figure 15. normalized transient thermal impedance, junction to case figure 16. breakdown voltage as a function of gate-emitter resistance test circuits figure 17. self clamped inductive switching current test circuit figure 18. clamped inductive switching time test circuit typical performance curves (continued) c, capacitance (pf) 0 5 10 15 20 25 v ce , collector-to-emitter voltage (v) 400 600 800 1400 1600 1800 2000 c res c oes c ies 1200 1000 frequency = 1mhz 200 0 q g , gate charge (nc) 12 10 8 6 4 2 0 6 5 1 0 4 3 2 0 5 15 20 25 30 v ce , collector-emitter voltage (v) v ge , gate-emitter voltage (v) ref i g = 1ma, r l = 1.7 ? , t c = +25 o c 10 v ce = 12v v ce = 4v v ce = 8v t 1 , rectangular pulse duration (s) 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.02 0.05 0.5 z jc , normalized thermal response 0.2 0.1 0.01 t 1 t 2 pd duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse r ge , gate-to- emitter resistance ( ? ) 0 2000 4000 6000 8000 10000 325 330 335 340 345 350 355 bv cer , collector-emitter 25 o c 175 o c bkdn voltage (v) r g g c e v dd 2.3mh dut r gen = 25 ? 5v r gen = 50 ? + - v cc dut 300v 10v c g e r ge = 50 ? 1/r g = 1/r gen + 1/r ge l = 550 h r l
3-60 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?ations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. taiwan limited 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 hgtp14n36g3vl, hgt1s14n36g3vl, hgt1s14n36g3vls handling precautions for igbt s insulated gate bipolar transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application proce- dures, however, igbt s are currently being extensively used in production by numerous equipment manufacturers in mili- tary, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbt s can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ? ?ccosorbd ld26?or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating -the gate-voltage rating of v gem may be exceeded if i gem is limited to 10ma. ? trademark emerson and cumming, inc . intersil corporation igbt product is covered by one or more of the following u.s. patents: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
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