2n4124 vishay semiconductors formerly general semiconductor document number 88115 www.vishay.com 07-may-02 1 small signal transistor (npn) features ?npn silicon epitaxial transistor for switching and amplifier applications. ?especially suitable for af-driver and low-power output stages. ?as complementary type, the pnp transistor 2n4126 is recommended. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-emitter voltage v ceo 25 v collector-base voltage v cbo 30 v emitter-base voltage v ebo 5v collector current i c 200 ma peak collector current i cm 800 ma base current i b 50 ma power dissipation at t amb = 25 cp tot 625 (1) mw thermal resistance junction to ambient air r ja 200 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) valid provided that leads at a distance of 2mm from case are kept at ambient temperature. 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
2n4124 vishay semiconductors formerly general semiconductor www.vishay.com document number 88115 2 07-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit dc current gain h fe v ce = 1 v, i c = 2.0 ma 120 360 v ce = 1 v, i c = 50 ma 60 collector-base cutoff current i cbo v cb = 20 v 50 na emitter-base cutoff current i ebo v eb = 3 v 50 na collector saturation voltage v cesat i c = 50 ma, i b = 5 ma 0.3 v base saturation voltage v besat i c = 50 ma, i b = 5 ma 0.95 v collector-emitter breakdown voltage v( br)ceo i c = 1 ma 25 v collector-base breakdown voltage v( br)cbo i c = 10 a 30 v emitter-base breakdown voltage v( br)ebo i e = 10 a 5 v gain-bandwidth product f t v ce = 5 v, i c = 10 ma 200 mhz f = 50 mhz collector-base capacitance c cbo v cb = 10 v, f = 1mhz 12 pf ratings and characteristic curves (t a = 25 c unless otherwise noted)
2n4124 vishay semiconductors formerly general semiconductor document number 88115 www.vishay.com 07-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
2n4124 vishay semiconductors formerly general semiconductor www.vishay.com document number 88115 4 07-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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