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1 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z (un5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/521d/521e/ 521f/521k/521l/521m/521n/521t/521v/521z) silicon npn epitaxial planer transistor for digital circuits features costs can be reduced through downsizing of the equipment and reduction of the number of parts. s-mini type package, allowing automatic insertion through tape packing and magazine packing. resistance by part number marking symbol (r 1 )(r 2 ) unr5211 8a 10k ? 10k ? unr5212 8b 22k ? 22k ? unr5213 8c 47k ? 47k ? unr5214 8d 10k ? 47k ? unr5215 8e 10k ? unr5216 8f 4.7k ? unr5217 8h 22k ? unr5218 8i 0.51k ? 5.1k ? unr5219 8k 1k ? 10k ? unr5210 8l 47k ? unr521d 8m 47k ? 10k ? unr521e 8n 47k ? 22k ? unr521f 8o 4.7k ? 10k ? unr521k 8p 10k ? 4.7k ? unr521l 8q 4.7k ? 4.7k ? unr521m el 2.2k ? 47k ? unr521n ex 4.7k ? 47k ? unr521t ez 22k ? 47k ? unr521v fd 2.2k ? 2.2k ? unr521z ff 4.7k ? 22k ? absolute maximum ratings (ta=25?c) 1 : base 2 : emitter eiaj : scC70 3 : collector smini3-g1 package unit: mm internal connection parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v collector current i c 100 ma total power dissipation p t 150 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c 2.1 0.1 1.3 0.1 0.3 +0.1 C0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 C0.1 0.15 +0.10 C0.05 5 10 b c r1 r2 e note.) the part numbers in the parenthesis show conventional part number.
2 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 50v, i e = 0 0.1 a i ceo v ce = 50v, i b = 0 0.5 a unr5211 0.5 unr5212/5214/521e/521d/521m/521n/521t 0.2 unr5213 0.1 unr5215/5216/5217/5210 i ebo v eb = 6v, i c = 0 0.01 ma unr521f/521k 1.0 unr5219 1.5 unr5218/521l/521v 2.0 unr521z 0.4 collector to base voltage v cbo i c = 10 a, i e = 0 50 v collector to emitter voltage v ceo i c = 2ma, i b = 0 50 v unr5211 35 unr5212/521e 60 unr5213/5214/521m 80 unr5215*/5216*/5217*/5210* 160 460 unr521f/521d/5219 h fe v ce = 10v, i c = 5ma 30 unr5218/521k/521l 20 unr521n/521t 80 400 unr521v 6 20 unr521z 60 200 collector to emitter saturation voltage v ce(sat) i c = 10ma, i b = 0.3ma 0.25 v unr521v i c = 10ma, i b = 1.5ma 0.25 v output voltage high level v oh v cc = 5v, v b = 0.5v, r l = 1k ? 4.9 v output voltage low level v cc = 5v, v b = 2.5v, r l = 1k ? 0.2 unr5213/521k v ol v oc = 5v, v b = 3.5v, r l = 1k ? 0.2 v unr521d v cc = 5v, v b = 10v, r l = 1k ? 0.2 unr521e v cc = 5v, v b = 6v, r l = 1k ? 0.2 transition frequency f t v cb = 10v, i e = C2ma, f = 200mhz 150 mhz unr5211/5214/5215/521k 10 unr5212/5217/521t 22 unr5213/521d/521e/5210 47 unr5216/521f/521l/521n/521z r 1 (C30%) 4.7 (+30%) k ? unr5218 0.51 unr5219 1 unr521m/521v 2.2 emitter cutoff current forward current transfer ratio input resis- tance * h fe rank classification (unr5125/5216/5217/5210) rank q r s h fe 160 to 260 210 to 340 290 to 460 3 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z electrical characteristics (continued) (ta=25?c) parameter symbol conditions min typ max unit unr5211/5212/5213/521l 0.8 1.0 1.2 unr5214 0.17 0.21 0.25 unr5218/5219 0.08 0.1 0.12 unr521d 4.7 unr521e 2.14 unr521f/521t r 1 /r 2 0.47 unr521k 2.13 unr521m 0.047 unr521n 0.1 unr521v 1.0 unr521z 0.21 resis- tance ratio 4 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z common characteristics chart p t ta characteristics charts of unr5211 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 0 0 160 40 120 80 240 200 160 120 80 40 ambient temperature ta ( ?c ) total power dissipation p t ( mw ) 5 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z characteristics charts of unr5212 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o characteristics charts of unr5213 i c v ce v ce(sat) i c h fe i c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.9ma 0.8ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 6 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z c ob v cb i o v in v in i o characteristics charts of unr5214 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 7 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z characteristics charts of unr5215 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o characteristics charts of unr5216 i c v ce v ce(sat) i c h fe i c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma i b =1.0ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 8 transistors with built-in resistor c ob v cb i o v in v in i o characteristics charts of unr5217 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 012 210 48 6 0 120 100 80 60 40 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 9 transistors with built-in resistor characteristics charts of unr5218 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o characteristics charts of unr5219 i c v ce v ce(sat) i c h fe i c 012 210 48 6 0 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 012 210 48 6 0 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 10 transistors with built-in resistor c ob v cb i o v in v in i o characteristics charts of unr5210 i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 012 210 48 6 0 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 400 350 250 150 50 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 11 transistors with built-in resistor unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z characteristics charts of unr521d i c ?v ce v ce(sat) ?i c h fe ?i c c ob ?v cb i o ?v in v in ?i o characteristics charts of unr521e i c ?v ce v ce(sat) ?i c h fe ?i c 012 210 48 6 0 30 25 20 15 10 5 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 13 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75 ? c 25 ? c 25 ? c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25 ? c 1 3 1.5 10 30 100 300 1000 3000 10000 4.0 3.5 3.0 2.5 2.0 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25 ? c 012 210 48 6 0 60 50 40 30 20 10 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25 ? c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75 ? c 25 ? c 25 ? c 0 13 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75 ? c 25 ? c 25 ? c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25 ? c 12 transistors with built-in resistor c ob v cb i o v in v in i o characteristics charts of unr521f i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 1.5 10 30 100 300 1000 3000 10000 4.0 3.5 3.0 2.5 2.0 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 012 210 48 6 0 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 40 80 120 160 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 6 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 3 0.4 10 30 100 300 1000 3000 10000 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 13 transistors with built-in resistor characteristics charts of unr521k i c v ce v ce(sat) i c h fe i c c ob v cb v in i o characteristics charts of unr521l i c v ce v ce(sat) i c h fe i c 012 210 48 6 0 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.2ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 0.01 13 0.1 1 10 100 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 240 200 160 120 80 40 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 012 210 48 6 0 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.2ma 0.4ma 0.6ma 0.8ma 0.01 13 0.1 1 10 100 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 240 200 160 120 80 40 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 0.01 0.1 0.3 0.1 1 10 0.03 0.3 3 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v t a =25 c 14 transistors with built-in resistor c ob v cb i o v in 0 1 6 5 4 3 2 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 0.01 0.1 0.3 0.1 1 10 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c characteristics charts of unr521m i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 012 210 48 6 240 200 160 120 80 40 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.2ma 0.1ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 0.9ma 0.001 0.003 13 0.01 0.03 0.1 0.3 1 3 10 10 30 100 300 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 13 100 200 300 500 400 10 30 100 300 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c 0 0.1 0.3 5 4 3 2 1 1 3 10 30 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 0.4 10 1 10 2 10 3 10 4 1.4 1.2 1.0 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.03 0.1 0.3 0.1 0.3 1 3 10 30 100 1 3 10 30 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c 15 transistors with built-in resistor characteristics charts of unr521n i c v ce v ce(sat) i c h fe i c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C 25?c 0 1 480 400 320 240 160 80 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c C25?c 25?c c ob v cb i o v in v in i o characteristics charts of unr521t i c v ce v ce(sat) i c h fe i c 0 1 6 5 4 3 2 1 10 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 1 480 400 320 240 160 80 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c C25?c 25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output voltage i o ( ma ) v o =0.2v t a =25 c 16 transistors with built-in resistor c ob v cb i o v in v in i o 0 1 6 5 4 3 2 1 10 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c characteristics charts of unr521v i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 1 240 200 160 120 80 40 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c C25?c 25?c 0 1 6 5 4 3 2 1 10 100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z 17 transistors with built-in resistor 0 012 210 48 6 40 120 80 160 140 100 60 20 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =1.0ma 0.7ma 0.8ma 0.9ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 1 0.1 1 10 10 100 1000 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c C25?c 0 1 480 400 320 240 160 80 10 100 1000 forward current transfer ratio h fe collector current i c ( ma ) v ce =10v ta=75?c 25?c C25?c characteristics charts of unr521z i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o 0 C1 6 5 4 3 2 1 C10 C100 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c 1 0.4 10 100 1000 10000 1.4 1.2 1 0.8 0.6 output current i o ( a ) input voltage v in ( v ) v o =5v ta=25?c 0.01 0.1 0.1 1 10 100 1 10 100 input voltage v in ( v ) output current i o ( ma ) v o =0.2v ta=25?c unr5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521d/521e/521f/521k/521l/521m/521n/521t/521v/521z please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, 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(2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar |
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