1 edition 1.2 july 1999 FSU01LG general purpose gaas fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 12.0 -5 375 -65 to +175 175 note v v mw c c p tot t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 6 volts. 2. the forward and reverse gate currents should not exceed 0.7 and -0.1 ma respectively with gate resistance of 2000 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c. available case styles: lg g.c.p.: gain compression point item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure output power at 1db gain compression point power gain at 1db gain compression point symbol i dss 35 55 75 -50- -0.7 -1.2 -1.7 -5 - - 18.0 19.0 - - 0.55 - 19.0 20.0 - v ds = 3v, i ds = 2.7ma v ds = 3v, i ds = 27ma v ds = 3v, v gs = 0v i gs = -2.7 a channel to case v ds = 6v i ds = 40ma f = 2ghz v ds = 3v i ds = 10ma f = 2ghz ma ms v db db dbm v g m v p v gso p 1db g 1db nf associated gain - 18.5 - db gas thermal resistance - 300 400 c/w r th test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) note: the rf parameters are measured on a lot basis by sample testing at an aql = 0.1%, level-ii inspection. any lot failure shall be 100% retested. features ?high output power: p 1db = 20.0dbm (typ.) ?high associated gain: g 1db = 19.0db (typ.) ?low noise figure: nf=0.55db (typ.)@f=2ghz ?low bias conditions: v ds =3v, 10ma ?cost effective hermetic microstrip package ?tape and reel available description the FSU01LG is a high performance, low noise, gaas fet designed for pcs/pcn applications as a driver in the 2ghz band. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance.
2 FSU01LG general purpose gaas fet power derating curve drain current vs. drain-source voltage 200 100 400 300 0 50 100 150 200 case temperature ( c) total power dissipation (mw) 50 60 40 10 20 30 1234 5 drain-source voltage (v) drain current (ma) v gs =0v -0.2v -0.4v -0.6v -0.8v -1.0v -1.2v noise figure vs. drain-source current associated gain vs. drain-source current i ds = 10ma f = 2.0 ghz 10 20 30 40 drain-source current (ma) 19.5 19.0 18.5 18.0 17.5 associated gain (db) 5v 4v 2v i ds = 10ma f = 2.0 ghz 10 20 30 40 drain-source current (ma) 0.9 0.8 0.7 0.6 0.5 noise figure (db) v ds = 6v v ds = 6v 5v 4v 2, 3v
3 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | 0.2 2 .05 0.1 1 3 4 0.4 ghz 0.4 ghz 2 2 2 2 1 1 1 1 3 3 3 3 250 100 10 25 50 ? 4 ghz 4 ghz 4 ghz 4 ghz 0.4 ghz scale for |s 12 | 0.4 ghz s-parameters v ds =6v, i ds = 40ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 400 .987 -13.8 4.507 168.3 .011 77.9 .812 -6.7 600 .985 -20.3 4.488 162.8 .016 76.2 .812 -10.0 800 .974 -27.1 4.421 157.0 .021 72.0 .807 -13.2 1000 .966 -34.1 4.367 151.3 .026 68.6 .803 -16.4 1200 .954 -40.0 4.309 146.4 .030 65.2 .793 -19.8 1400 .936 -47.0 4.212 140.5 .035 60.3 .786 -23.0 1600 .935 -53.3 4.158 135.2 .038 56.5 .778 -25.8 1800 .910 -58.7 4.037 130.8 .043 51.8 .766 -28.9 2000 .904 -65.4 3.980 125.2 .047 48.8 .761 -31.8 2200 .888 -71.0 3.885 120.7 .049 45.2 .748 -34.3 2400 .871 -77.0 3.797 115.5 .052 42.6 .739 -37.5 2600 .856 -82.5 3.696 110.9 .055 39.5 .729 -40.2 2800 .844 -88.1 3.609 106.2 .057 35.7 .716 -43.0 3000 .829 -93.3 3.511 101.9 .060 30.9 .704 -45.8 3200 .812 -98.4 3.400 97.7 .060 27.2 .692 -47.9 3400 .798 -103.1 3.323 93.8 .061 26.0 .687 -50.3 3600 .788 -107.9 3.249 89.7 .062 22.9 .681 -52.8 3800 .779 -112.6 3.176 85.6 .063 20.9 .674 -55.3 4000 .769 -117.3 3.101 81.7 .063 19.4 .668 -58.0 FSU01LG general purpose gaas fet
4 output power & im 3 vs. input power v ds = 6v f = 2 ghz ? f = +1 mhz i ds = 40ma -12 -10 -8 -6 -4 -2 0 2 4 6 total input power (dbm) 18 20 16 14 12 10 8 6 4 2 0 -2 -4 -6 -20 -10 -30 -40 -50 -60 total output power (dbm) im 3 (dbc) p out im 3 2-tone single tone FSU01LG general purpose gaas fet
5 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics europe, gmbh quantum devices division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. 0.5 (0.02) 1.0 (0.039) 1.3 max (0.051) 0.1 (0.004) 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 case style "lg" metal-ceramic package unit: mm(inches) 1. gate 2. source 3. drain 4. source 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 gold plated leads 1 2 3 4 FSU01LG general purpose gaas fet
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