1 publication date: march 2002 sjc00044bed transistor 2sb0621, 2sb0621a (2sb621, 2sb621a) silicon pnp epitaxial planar type for low-frequency output amplification complementary to 2sd0592 (2sd592) and 2sd0592a (2sd592a) features ? low collector to emitter saturation voltage v ce(sat) ? high transition frequency f t absolute maximum ratings t a = 25 c parameter symbol rating unit collector to 2sb0621 v cbo ? 30 v base voltage 2sb0621a ? 60 collector to 2sb0621 v ceo ? 25 v emitter voltage 2sb0621a ? 50 emitter to base voltage v ebo ? 5v peak collector current i cp ? 1.5 a collector current i c ? 1a collector power dissipation p c 750 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ? 20 v, i e = 0 ? 0.1 a collector to base 2sb0621 v cbo i c = ? 10 a, i e = 0 ? 30 v voltage 2sb0621a ? 60 collector to emitter 2sb0621 v ceo i c = ? 2 ma, i b = 0 ? 25 v voltage 2sb0621a ? 50 emitter to base voltage v ebo i e = ? 10 a, i c = 0 ? 5v forward current transfer ratio h fe1 * v ce = ? 10 v, i c = ? 500 ma 85 340 h fe2 v ce = ? 5 v, i c = ? 1 a 50 collector to emitter saturation voltage v ce(sat) i c = ? 500 ma, i b = ? 50 ma ? 0.2 ? 0.4 v base to emitter saturation voltage v be(sat) i c = ? 500 ma, i b = ? 50 ma ? 0.85 ? 1.2 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 20 30 pf electrical characteristics t a = 25 c rank q r s h fe1 85 to 170 120 to 240 170 to 340 5.0 0.2 0.7 0.1 0.45 +0.15 ?0.1 2.5 +0.6 ?0.2 0.45 +0.15 ?0.1 2.5 123 +0.6 ?0.2 4.0 0.2 5.1 0.2 12.9 0.5 2.3 0.2 0.7 0.2 1: emitter 2: collector 3: base to-92-b1 package unit: mm note) * : h fe rank classification note) the part numbers in the parenthesis show conventional part number.
2sb0621, 2sb0621a 2 sjc00044bed 0 160 40 120 80 140 20 100 60 0 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 1.50 ? 1.25 ? 1.00 ? 0.75 ? 0.50 ? 0.25 i b = ? 10 ma ? 9 ma ? 8 ma ? 7 ma ? 6 ma ? 5 ma ? 4 ma ? 3 ma ? 2 ma ? 1 ma t a = 25 c collector current i c ( a ) collector to emitter voltage v ce ( v ) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 1.2 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 v ce = ? 10 v t a = 25 c base current i b ( ma ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 ? 0.03 ? 0.3 ? 3 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 ? 30 ? 100 i c / i b = 10 ? 25 c t a = 75 c 25 c collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 ? 0.03 ? 0.3 ? 3 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 ? 30 ? 100 i c / i b = 10 t a = ? 25 c 75 c 25 c base to emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 ? 0.03 ? 0.3 ? 3 0 500 400 300 200 100 v ce = ? 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 1 3 10 30 100 220 550 0 200 160 120 80 40 v cb = ? 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) ? 1 ? 3 ? 10 ? 5 ? 50 ? 2 ? 20 ? 30 ? 100 0 50 40 30 20 10 i e = 0 f = 1 mhz t a = 25 c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 1 10 100 0.3 3 30 0 ? 120 ? 100 ? 80 ? 60 ? 40 ? 20 i c = ? 10 ma t a = 25 c base to emitter resistance r be ( k ? ) collector to emitter voltage v cer ( v ) 2sb0621a 2sb0621 p c ? t a i c ? v ce i c ? i b v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i e c ob ? v cb v cer ? r be
2sb0621, 2sb0621a 3 sjc00044bed 0 160 40 120 80 140 20 100 60 1 10 10 2 10 3 10 4 v ce = ? 10 v ambient temperature t a ( c ) i ceo ( t a ) i ceo ( t a = 25 c ) ? 0.01 ? 0.1 ? 1 ? 10 ? 0.03 ? 0.3 ? 3 ? 0.001 ? 0.003 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 single pulse t a = 25 c t = 10 ms t = 1 s i cp i c 2sb0621 2sb0621a collector current i c ( a ) collector to emitter voltage v ce ( v ) i ceo ? t a area of safe operation (aso)
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