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d a t a sh eet product speci?cation 1995 aug 17 discrete semiconductors blt71 uhf power transistor
1995 aug 17 206 philips semiconductors product speci?cation uhf power transistor blt71 features very high efficiency low supply voltage. applications hand-held radio equipment in common emitter class-ab operation in the 900 mhz communications band. description npn silicon planar epitaxial transistor encapsulated in a sot223 envelope. pinning - sot223 pin symbol description 1 e emitter 2 b base 3 e emitter 4 c collector fig.1 simplified outline and symbol. handbook, halfpage e c b mam043 - 1 4 123 top view quick reference data rf performance at t s 60 c in a common emitter test circuit. mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) cw, class-ab 900 4.8 1.2 3 6 3 60
1995 aug 17 207 philips semiconductors product speci?cation uhf power transistor blt71 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note 1. t s is the temperature at the soldering point of the collector lead. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 16 v v ceo collector-emitter voltage open base - 8v v ebo emitter-base voltage open collector - 2.5 v i c collector current (dc) - 500 ma p tot total power dissipation up to t s =90 c - 3.5 w t stg storage temperature - 65 +150 c t j operating junction temperature - 175 c symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point p tot = 3.5 w; up to t s =90 c; note 1 24 k/w symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage open emitter; i c = 0.5 ma 16 -- v v (br)ceo collector-emitter breakdown voltage open base; i c =10ma 8 -- v v (br)ebo emitter-base breakdown voltage open collector; i e = 0.1 ma 2.5 -- v i ces collector leakage current v ce =8v; v be =0 -- 100 m a h fe dc current gain v ce =5v; i c = 100 ma 25 -- c c collector capacitance v cb = 4.8 v; i e =i e = 0; f = 1 mhz -- 7pf c re feedback capacitance v ce = 4.8 v; i c = 0; f = 1 mhz -- 5pf
1995 aug 17 208 philips semiconductors product speci?cation uhf power transistor blt71 fig.2 dc soar. t s =90 c. handbook, halfpage 10 1 11010 i c (a) v ce (v) mld129 2 1 10 1 fig.3 collector capacitance as a function of collector-base voltage; typical values. i e =i e = 0; f = 1 mhz. handbook, halfpage 0 6 4 2 0 4 8 12 16 20 (pf) c c v cb (v) mld130 fig.4 dc current gain as a function of collector current; typical values. measured under pulsed conditions: t p 300 m s; d 0.01. v ce = 4.8 v. handbook, halfpage 0 100 50 150 0 200 400 600 800 h fe i c (ma) mld131
1995 aug 17 209 philips semiconductors product speci?cation uhf power transistor blt71 application information rf performance at t s 60 c in a common emitter test circuit. ruggedness in class-ab operation the blt71 is capable of withstanding a load mismatch corresponding to vswr = 6 : 1 through all phases under the following conditions: p l = 1.2 w; v ce = 6.5 v; f = 900 mhz. mode of operation f (mhz) v ce (v) i cq (ma) p l (w) g p (db) h c (%) cw, class-ab 900 4.8 1 1.2 3 6 3 60 fig.5 power gain and ef?ciency as functions of load power; typical values. v ce = 4.8 v. i cq = 1 ma. f = 900 mhz. handbook, halfpage 0 0.4 0.8 2 0 mld132 1.6 1.2 10 4 6 p (w) l 100 40 60 80 20 0 2 8 h (%) g p (db) h g p fig.6 load power as a function of input power; typical values. v ce = 4.8 v. i cq = 1 ma. f = 900 mhz. handbook, halfpage 0 200 100 400 300 500 2.0 1.2 1.6 0.4 0 0.8 mld133 p l (w) p i (mw)
1995 aug 17 210 philips semiconductors product speci?cation uhf power transistor blt71 fig.7 class-ab test circuit at 900 mhz. handbook, full pagewidth mld134 r1 l8 c3 c2 c1 c16 c5 c4 c7 c6 l1 l3 c10 l7 input 50 w output 50 w v bias v s dut c13 c12 c9 c8 c11 l9 c15 c14 l10 l2 l4 l5 l6
1995 aug 17 211 philips semiconductors product speci?cation uhf power transistor blt71 list of components (see figs 7 and 8) notes 1. american technical ceramics type 100a or capacitor of same quality. 2. the striplines are on a double copper-clad printed-circuit board, with duroid dielectric ( e r = 2.2); thickness 1 16 "; thickness of the copper sheet 2 35 m m. component description value dimensions catalogue no. c1, c6, c9, c16 multilayer ceramic chip capacitor; note 1 100 pf c2, c4, c12, c14 multilayer ceramic chip capacitor; note 1 1pf c3, c5, c13, c15 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09004 c7 multilayer ceramic chip capacitor; note 1 6.8 pf c8 tantalum capacitor 1 m f, 35 v c10 multilayer ceramic chip capacitor; note 1 5.1 pf c11 tantalum capacitor 100 m f, 20 v l1 stripline; note 2 50 w length 28.5 mm width 5 mm l2 stripline; note 2 50 w length 23 mm width 5 mm l3 11 turns enamelled 0.6 mm copper wire 100 nh length 7.5 mm internal dia. 3.3 mm l4 stripline; note 2 50 w length 1 mm width 5 mm l5 stripline; note 2 50 w length 3 mm width 2.5 mm l6 stripline; note 2 50 w length 9 mm width 5 mm l7 7 turns enamelled 0.6 mm copper wire 37 nh length 7.3 mm internal dia. 3.3 mm l8 grade 3b ferroxcube wideband hf choke 4132 020 36640 l9 stripline; note 2 50 w length 13.5 mm width 5 mm l10 stripline; note 2 50 w length 26.5 mm width 5 mm r1 metal ?lm resistor 0.1 w, 10 w
1995 aug 17 212 philips semiconductors product speci?cation uhf power transistor blt71 fig.8 component lay-out and printed-circuit board for 900 mhz class-ab test circuit. dimensions in mm. the components are situated on one side of the copper-clad pcb, the other side is unetched and serves as a ground plane. earth connections from the component side to the ground plane are made by through metallization. handbook, full pagewidth mld135 139 79 copper foil v v s bias plated through holes c1 c2 c3 l1 c4 c5 l2 l3 c6 l4 l5 l6 l7 c8 c9 r1 l8 c11 l9 c10 l10 c13 c12 c14 c15 blt71 c16 c7
1995 aug 17 213 philips semiconductors product speci?cation uhf power transistor blt71 spice parameters for the blt71 crystal note 1. these parameters have not been extracted, the default values are shown. sequence no. parameter value unit 1 is 3.503 fa 2 bf 190.5 - 3 nf 0.981 - 4 vaf 35.45 v 5 ikf 24.52 a 6 ise 184.9 fa 7 ne 1.475 - 8 br 12.61 - 9 nr 1.042 - 10 var 1.476 v 11 ikr 2.206 a 12 isc 866.5 aa 13 nc 1.025 - 14 rb 2.000 w 15 irb 1.000 m a 16 rbm 2.000 w 17 re 373.8 m w 18 rc 330.6 m w 19 (1) xtb 0.000 - 20 (1) eg 1.110 ev 21 (1) xti 3.000 - 22 cje 9.746 pf 23 vje 0.600 v 24 mje 0.288 - 25 tf 11.99 ps 26 xtf 0.979 - 27 vtf 19.52 mv 28 itf 0.137 a 29 ptf 0.000 deg 30 cjc 5.028 pf 31 vjc 0.609 v 32 mjc 0.368 - 33 xcjc 0.150 - 34 tr 3.841 ns 35 (1) cjs 0.000 f 36 (1) vjs 750.0 mv 37 (1) mjs 0.000 - 38 fc 0.813 - list of components (see fig.9) designation value unit c be 182 ff c cb 16 ff c ce 249 ff l1 0.025 nh l2 1.19 nh l3 0.6 nh l b 1.85 nh l e 1.22 nh fig.9 package equivalent circuit sot223h. ql b = 50; ql e = 50; ql b,e (f) = ql b,e ? (f/fc); fc = scaling frequency = 1 ghz. handbook, halfpage mbc964 b e c b' c' e' l b l e l3 l1 l2 c cb c be ce c
1995 aug 17 214 philips semiconductors product speci?cation uhf power transistor blt71 fig.10 input impedance as a function of frequency (series components); typical values. v ce = 4.8 v; i cq = 1 ma. p l = 1.2 w; t amb =25 c. handbook, halfpage 800 850 1000 20 0 16 mld136 900 950 12 8 4 z i ( w ) f (mhz) x i r i fig.11 load impedance as a function of frequency (series components); typical values. v ce = 4.8 v; i cq = 1 ma. p l = 1.2 w; t amb =25 c. handbook, halfpage 800 850 900 1000 20 10 mld137 950 0 10 20 z l ( w ) f (mhz) r l x l fig.12 gain as a function of frequency; typical values. v ce = 4.8 v; i cq = 1 ma. p l = 1.2 w; t amb =25 c. handbook, halfpage 800 850 900 950 1000 0 2 4 mld138 10 8 6 g f (mhz) p (db) fig.13 definition of transistor impedance. handbook, halfpage mba451 z i z l
1995 aug 17 215 philips semiconductors product speci?cation uhf power transistor blt71 package outline fig.14 sot223. dimensions in mm. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 a b 0.2 a 1.80 max 16 16 o max 10 o max 0.10 0.01 0.32 0.24 4 123 msa035 - 1 (4x) 0.1 b m m s seating plane 0.1 s o
1995 aug 17 216 philips semiconductors product speci?cation uhf power transistor blt71 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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