micro international, inc. 179-204 belle forrest circle nashville, tn 37221 tel: 615-662-1200 fax 615-662-1226 micro international, inc product data part number ldt2857 and LDT2857T micro-lid npn transistor
micro-lid transistors ldt2857 and LDT2857T description: the ldt2857 (untinned) and LDT2857T (tinned) are npn silicon 1.4 ghz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (micro international manufactured package p/n 4-075-1). the ldt2857 and LDT2857T meet the general specifications of the 2n2857 transistor. the 4-075-1 micro-lid package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. the ldt2857 and LDT2857T can be provided with special feature options such as additional temperature cycling, screening, and matching hfe selection. maximum ratings: parameter symbol rating collector-base voltage vcbo 30 v collector-emitter voltage vceo 15 v emitter-base voltage vebo 3 v collector current ic 50 ma total dissipation pt 350 mw operating junction temperature tj 150 c storage temperature tstg -65 c to 150 c operating temperature toper -55 c to 125 c 1/3 january 1997 www.microlid.com sales@microlid.com
micro-lid transistors ldt2857 and LDT2857T ______________________________________________________________________________________ outline / schematic: dimensions / marking: length .075 + .003 post 1 (emitter) .015 x .010 typ width .040 + .003 post 2 (base) .015 x .010 typ height .035 + .003 post 3,4 (collector) .015 x .012 typ marking on back of package : gray dot over emitter and red dot in center (post down configuration) standard in-process screening requirements: ? semiconductor die and micro-lid package visual inspection ? wire pull test ? 24 hour stabilization bake at 150 c ? 10 temperature cycles from ?55 c to 125 c ? 100% electrical test of dc characteristics at 25 c ? final visual inspection ________________________________________________________________ 2/3 january 1997 .075 .040 4 3 2 1 .035 substrate / circuit board 1 2 3, 4 top view end view side view www.microlid.com sales@microlid.com
micro-lid transistors ldt2857 and LDT2857T electrical characteristics (25 c ambient) parameter symbol min typ max units collector-base breakdown bvcbo 30 -- -- v ic = 10 ua, ie = 0 collector-emitter breakdown* bvceo 15 -- -- v ib = 0, ic = 10 ma emitter-base breakdown bvebo 3 -- -- v ic = 0, ie = 10 ua collector-base cutoff current icbo -- -- 10 na vcb = 15 v dc forward current gain* hfe 25 -- 150 ic = 15 ma, vce = 1v collector-emitter saturation vce ( sat) -- -- .4 v ic = 10 ma, ib = 1 ma base-emitter saturation vbe (sat) -- -- 1 v ic = 10 ma, ib = 1 ma collector capacitance cobo -- -- 1 pf vcb = 10 v, ie = 0 f = 1 mhz gain bandwidth product ft - - 1.4 -- ghz ic = 25 ma, vce = 5 v f = 500 mhz noise figure nf -- 5 -- db ic = 2 ma, vce = 5 v f = 500 mhz * pulse test, pulse width < 300 usec, duty cycle < 2% 3/ 3 january 1997 www.microlid.com sales@microlid.com
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