? semiconductor components industries, llc, 2002 july, 2002 rev. 5 1 publication order number: mjd243/d mjd243 (npn), mjd253 (pnp) preferred device complementary silicon plastic power transistor dpak for surface mount applications . . . designed for low voltage, lowpower, highgain audio amplifier applications. ? collectoremitter sustaining voltage v ceo(sus) = 100 vdc (min) @ i c = 10 madc ? high dc current gain h fe = 40 (min) @ i c = 200 madc = 15 (min) @ i c = 1.0 adc ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (a1o suffix) ? lead formed version in 16 mm tape and reel (at4o suffix) ? low collectoremitter saturation voltage v ce(sat) = 0.3 vdc (max) @ i c = 500 madc = 0.6 vdc (max) @ i c = 1.0 adc ? high currentgain bandwidth product f t = 40 mhz (min) @ i c = 100 madc ? annular construction for low leakage i cbo = 100 nadc @ rated v cb maximum ratings rating symbol value unit ???????????? ???????????? collectorbase voltage ???? ???? v cb ??? ??? 100 ??? ??? vdc ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ??? ??? 100 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??? ??? 7 ??? ??? vdc ???????????? ???????????? collector current continuous peak ???? ???? i c ??? ??? 4 8 ??? ??? adc ???????????? ???????????? base current ???? ???? i b ??? ??? 1 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 12.5 0.1 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? total device dissipation @ t a = 25 c (note 1.) derate above 25 c ???? ? ?? ? ???? p d ??? ? ? ? ??? 1.4 0.011 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??? ? ? ? ??? 65 to +150 ??? ? ? ? ??? c 1. when surface mounted on minimum pad sizes recommended. dpak case 369 style 1 4 amperes 100 volts 12.5 watts power transistor marking diagrams y = year ww = work week mjd2x3 = device code x = 4 or 5 device package shipping ordering information dpak dpak case 369a style 1 yww mjd 2x3 yww mjd 2x3 preferred devices are recommended choices for future use and best overall value. mjd243t4 2500/tape & reel mjd2531 dpak 75 units/rail mjd253t4 dpak 2500/tape & reel http://onsemi.com
mjd243 (npn), mjd253 (pnp) http://onsemi.com 2 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 15 10 t c 5 20 p d , power dissipation (watts) 2.5 0 1.5 1 t a 0.5 2 t c t a (surface mount) thermal characteristics characteristic symbol value unit ?????????????????????? ?????????????????????? thermal resistance, junction to case junction to ambient (note 1) ????? ????? r jc r ja ????? ????? 10 89.3 ???? ???? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ? ???????????????????? ? ?????????????????????? characteristic ????? ? ??? ? ????? symbol ??? ?? ? ??? min ???? ? ?? ? ???? max ??? ? ? ? ??? unit ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (note 2) (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ?? ? ??? 100 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) collector cutoff current (v cb = 100 vdc, i e = 0, t j = 125 c) ????? ????? i cbo ??? ??? ???? ???? 100 100 ??? ??? nadc adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 7 vdc, i c = 0) ????? ????? i ebo ??? ??? ???? ???? 100 ??? ??? nadc ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (note 2) (i c = 200 madc, v ce = 1 vdc) dc current gain (note 2) (i c = 1 adc, v ce = 1 vdc) ????? ? ??? ? ????? h fe ??? ?? ? ??? 40 15 ???? ? ?? ? ???? 180 ??? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (note 2) (i c = 500 madc, i b = 50 madc) (i c = 1 adc, i b = 100 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ?? ? ?? ? ??? ???? ? ?? ? ? ?? ? ???? 0.3 0.6 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (note 2) (i c = 2 adc, i b = 200 madc) ????? ????? v be(sat) ??? ??? ???? ???? 1.8 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (note 2) (i c = 500 madc, v ce = 1 vdc) ????? ????? v be(on) ??? ??? ???? ???? 1.5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain bandwidth product (note 3) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ?? ? ??? 40 ???? ? ?? ? ???? ??? ? ? ? ??? mhz ?????????????????????? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ????? ????? c ob ??? ??? ???? ???? 50 ??? ??? pf 1. when surface mounted on minimum pad sizes recommended. 2. pulse test: pulse width = 300 s, duty cycle 2%. 3. f t = ? h fe ?? f test .
mjd243 (npn), mjd253 (pnp) http://onsemi.com 3 figure 2. active region maximum safe operating area 10 v ce , collector-emitter voltage (volts) 0.01 100 2 5 0.1 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo 500 s dc 1 1ms 50 20 10 5 2 1 100 s i c , collector current (amps) 0.02 0.05 0.2 0.5 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, time (ms) 0.01 0.02 0.05 1 2 5 10 20 50 100 200 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r jc (t) = r(t) jc r jc = 10 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0 (single pulse) figure 3. thermal response 0.1 0.02 0.01
mjd243 (npn), mjd253 (pnp) http://onsemi.com 4 i c , collector current (amp) i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 4. dc current gain figure 5. aono voltages i c , collector current (amp) 200 500 0.06 0.1 0.4 4.0 0.04 100 70 50 20 0.2 i c , collector current (amp) figure 6. temperature coefficients 5.0 1.0 2.0 0.6 25 c t j = 150 c -55 c 0.04 i c , collector current (amp) 1.4 1.2 0.8 0.4 0 t j = 25 c v, voltage (volts) npn mjd243 pnp mjd253 100 200 70 50 30 20 2.0 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1.0 v v ce = 2.0 v v, voltage (volts) v ce(sat) v be @ v ce = 1.0 v vb for v be 0 t j = 25 c v be(sat) @ i c /i b = 10 i c /i b = 10 v be @ v ce = 1.0 v v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) q +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 1.0 v v ce = 2.0 v 7.0 10 30 300 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.06 0.1 0.4 4.0 0.04 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 0.04 0.06 0.1 0.4 4.0 0.2 1.0 2.0 0.6 1.0 0.6 0.2 1.4 1.2 0.8 0.4 1.0 0.6 0.2 3.0 5.0 7.0 10 5.0 i c /i b = 10 v ce(sat) 5.0 v be(sat) @ i c /i b = 10 * vc for v ce(sat) vb for v be * vc for v ce(sat)
mjd243 (npn), mjd253 (pnp) http://onsemi.com 5 figure 7. switching time test circuit +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma for pnp test circuit, reverse all polarities 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 8. turnon time 3 2 5 2 13 t r npn mjd243 pnp mjd253 0.02 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 9. turnoff time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 10 100 100 200 50 figure 10. capacitance 70 50 20 10 7.0 5.0 3.0 1.0 c, capacitance (pf) 2.0 t j = 25 c c ib c ob mjd243 (npn) mjd253 (pnp) 30 npn mjd243 pnp mjd253 20 70 30 200 v r , reverse voltage (volts) 10 100 70 100 30 figure 11. capacitance 50 20 50 7 5 2 130 c, capacitance (pf) 3 t j = 25 c c ib c ob 20 10 70
mjd243 (npn), mjd253 (pnp) http://onsemi.com 6 typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 170 c 140 c desired curve for high mass assemblies figure 12. typical solder heating profile
mjd243 (npn), mjd253 (pnp) http://onsemi.com 7 package dimensions case 369a13 issue ab dpak style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 6.7 0.265 1.6 0.063 2.3 0.090 2.3 0.090 1.6 0.063 minimum pad sizes recommended for surface mounted applications 0.265 6.7 0.118 3.0 0.070 1.8 inches mm
mjd243 (npn), mjd253 (pnp) http://onsemi.com 8 package dimensions case 36907 issue m dpak straight leads style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd243/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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