1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2010.08 - rev.c 100ma / 50v digital transistors (with built-in resistors) dtc143tm / dtc143te / dtc143tua / dtc143tka ? applications inverter, interface, driver ? features 1) built-in bias resistors enable the configur ation of an inverter circuit without c onnecting external input resistors (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making the device design easy. ? structure npn epitaxial planar silicon transistor (resistor built-in type) ? dimensions (unit : mm) abbreviated symbol : 03 abbreviated symbol : 03 abbreviated symbol : 03 abbreviated symbol : 03 (1) emitter (2) base (3) collector rohm : emt3 dtc143te rohm : vmt3 dtc143tm (1) base (2) emitter (3) collector (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 dtc143tka (1) emitter (2) base (3) collector rohm : umt3 eiaj : sc-70 dtc143tua each lead has same dimensions each lead has same dimensions (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 ? inner circuit r 1 b : base c : collector e : emitter b r 1 =4.7k e c
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2010.08 - rev.c data sheet dtc143tm / dtc143te / dtc143tua / dtc143tka ? packaging specifications tl ? ? ? ? ? ??? ? ? ? ? umt3 emt3 smt3 dtc143te dtc143tm part no. dtc143tua 3000 t2l vmt3 8000 t106 3000 t146 3000 dtc143tka package packaging type taping taping taping taping code basic ordering unit (pieces) ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo 50 50 5 100 150 200 150 ? 55 to + 150 dtc143te dtc143tm dtc143tua dtc143tka v v ceo v ebo v v ma mw c c i c p c tj tstg unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature limits ? electrical characteristics (ta=25 ? c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. 50 50 5 ? ? 100 ? 3.29 ? ? ? ? ? ? 250 ? 4.7 250 ? ? ? 0.5 0.5 600 0.3 6.11 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v i c = 1ma, v ce = 5v i c /i b = 5ma/0.25ma v ce = 10v, i e = ? 5ma, f = 100mhz ? v v a a ? v k mhz typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? characteristics of built-in transistor ? electrical characteristic curves dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100 m 1k 500 200 100 50 20 10 5 2 1 ta = 100 c 25 c ? 40 c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m 100 m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c 25 c ? 40 c l c /l b = 20 fig.2 collector-emitter saturation voltage vs. collector current
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