reverse v oltage: 50 - 1000 volts forward current: 1.0 amp curm101 thru curm107 www.com chip.co m.tw c o m c h ip c o m c h ip parameter max. repetitive peak reverse voltage max. dc blocking voltage max. rms v oltage peak surge forward current 8.3ms single half sine-wave superimposed on rate load ( jedec method ) max. average forward current max. instantaneous forward current at 1.0 a reverse recovery timemax. dc reverse current at rated dc blocking voltage ta=25 ta=100 typical. thermal resistance (note 1) operating junction t emperature storage t emperature symbol v rrm v dc v rms i fsm i o v f trr i r r ja t j t stg maximum ratings and electrical characterics unit v v v a a v ns ua mds0208019b page 1 note 1: thermal resistance from junction to ambient. curm 101 curm 102 50 5035 600 600420 100 100 70 30 1.0 1.3 -55 to +150 42 5.0 50 -55 to +150 curm 107 curm 106 curm 105 curm 104 curm 103 800 800560 400 400280 smd ultra fast recovery rectifier smd ultra fast recovery rectifier 200 200140 1.0 1.7 1000 1000 700 75 50 c/w c c c c 0.146( 3.70) 0.012( 0.30) typ . 0.071( 1.80) 0.055( 1.40) 0.110(2. 80) 0.094( 2.40) 0.063( 1.60) 0.055( 1.40) 0.035( 0.90) typ . 0.035( 0.90) typ . m in i s m a d im e n s io n s i n i n c h e s a n d ( m ill im e te r) 0.161( 4.10) features ideal for surface mount applications easy pick and place plastic package has underwriters lab. flammability classification 94v-0 exceeds environmental standard mil-s- 19500/228 low leakage current mechanical data case: mini sma/sod-123 molded plastic t erminals: solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any approx. weight: 0.04 gram
rating and characteristic curves (curm101 thru curm107) www.com chip.co m.tw c o m c h ip c o m c h ip f o r w a r d c u r r e n t ( a ) forw ard vol tage ( v) fig.2 - fo rward c harac terist ics 0.01 0.1 1.0 10 100 20 mds0208019b page 2 fig. 3 - junc tion cap acita nce reverse voltage (v) 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 2 .2 2 .4 j u n c t i o n c a p a c i t a n c e ( p f ) 0 40 60 175 120 100 80 p e a k s u r g e f o r w a r d c u r r e n t ( a ) fig. 4 - non re petiti ve forw ard su rge cur rent 0 6 12 30 24 18 1 5 10 50 1 00 number of cycles at 60hz smd ultra fast recovery rectifier smd ultra fast recovery rectifier 0.1 10 1.0 0.0 1 0.0 01 fig. 5 - test circuit di agram a nd reve rse rec overy tim e chara cteris tics (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non-inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | || | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. 10 noninductive 50 noninductive w w fig. 6 - curren t de rating curve single phase half wave 60hz a v e r a g e f o r w a r d c u r r e n t ( a ) ambient t emperature ( c) 0 25 50 75 100 125 150 175 1.4 1.21.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 1000 100 10 1.0 0.1 percent of rated peak reverse v oltage (%) r e v e r s e c u r r e n t ( u a ) fig. 1 - reve rse cha racter istics tj=25 c tj=125 c tj=25 c pulse width 300us4% duty cycle c u r m 1 0 1 - 1 0 3 c u r m 1 0 4 c u r m 1 0 5 -1 0 7 =1mhz and applied 4vdc reverse voltage 8.3ms single half sine wave jedec methode tj=25 c
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