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product speci?cation file under integrated circuits, ic06 1997 nov 24 integra ted circuits 74hc1g126 74hct1g126 bus buffer/line driver; 3-state
1997 nov 24 2 philips semiconductors product speci?cation bus buffer/line driver; 3-state 74hc1g126 74hct1g126 fea tures wide operating voltage : 2.0 to 6.0 v symmetrical output impedance high noise immunity low power dissipation balanced propagation delays very small 5 pins package output capability : bus driver description the 74hc1g/hct1g126 is a highspeed si-gate cmos device. the 74hc1g/hct1g126 provides one non-inverting buffer/line driver with 3-state output. the 3-state output is controlled by the output enable input (oe). a low at oe causes the output as assume a high impedance off-state. the bus driver output currents are equal compared to the 74hc/hct126. function t able h = high voltage level l = low voltage level x = don't care z = high impedance off state inputs output oe in a out y h l l h h h l x z quick reference da t a gnd = 0 v ; t amb = 25 c; t r = t f 6.0 ns notes 1. c pd is used to determine the dynamic power dissipation (p d in m w). p d = c pd v cc 2 f i + ? (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; v cc = supply voltage in v; ? (c l v cc 2 f o ) = sum of outputs. 2. for hc1g the condition is v i = gnd to v cc. for hct1g the condition is v i = gnd to vcc - 1.5 v. pin description symbol p arameter conditions typical unit hc1g hct1g t phl / t plh propagation delay c l = 15 pf vcc = 5 v 9 10 ns ina to outy c i input capacitance 1.5 1.5 pf c pd power dissipation capacitance notes 1 and 2 30 27 pf pin no. symbol name and function 1, 2 oe, ina output enable input, data input 3 gnd ground (0 v) 4 outy data output 5 v cc positive supply voltage
1997 nov 24 3 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 ordering and p ackage informa tion outside north america north america p ackages tempera ture range pins p ackage ma terial code marking 74hc1g126gw - 40 c to +125 c 5 sc88a plastic sot353 hn 74hct1g126gw 5 sc88a plastic sot353 tn fig.1 pin configuration. 1 2 3 ina oe gnd v cc outy 5 4 12 6 fig.2 logic symbol. ou ty 4 ina 2 oe 1 fig.3 iec logic symbol. 1 2 4 oe fig.4 logic diagram. in a ou ty oe
1997 nov 24 4 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 recommended opera ting conditions absolute maximum ra tings limiting values is accordance with the absolute maximum rating system (iec 134). v oltages are referenced to gnd (ground = 0 v) notes 1. stresses beyond those listed may cause permanent damage to the device. these are stress rating only and functional operation of the device at these or any other conditions beyond those under `recommended operating conditions' is not implied. exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. the input and output voltage ratings may be exceeded if the input and output current ratings are observed. symbol p arameter 74hc1g 74hct1g unit condiitions min. typ . max. min. typ . max. v cc dc supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 v v i input voltage 0 - v cc 0 - v cc v v o output voltage 0 - v cc 0 - v cc v t amb operating ambient temperature range - 40 25 + 125 - 40 25 + 125 c see dc and ac characteristics per device t r ,t f input rise and fall times except for schmitt-trigger inputs - - 1000 - - - ns v cc = 2.0 v - - 500 - - 500 v cc = 4.5 v - - 400 - - - v cc = 6.0 v symbol p arameter conditions min. max. unit v cc dc supply voltage - 0.5 + 7.0 v i ik dc input diode current v i < - 0.5 or v i > v cc + 0.5 v - 20 ma i ok dcoutput diode current v o < - 0.5 or v o > v cc + 0.5 v - 20 ma i o dc output source or sink current bus driver outputs - 0.5v < v o < v cc + 0.5 v - 35.0 ma i cc dc v cc or gnd current for types with bus driver outputs - 70 ma t stg storage temperature range - 65 + 150 c p d power dissipation per package for temperature range: - 40 to + 125 c - 200 mw 5 pins plastic sc88a above +55 c derate linearly with 2.5 mw/k
1997 nov 24 5 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 dc characteristics for the 74hc1g over recommended operating conditions. v oltage are referenced to gnd (ground = 0 v) note 1. all typical values are measured at t amb = 25 c. symbol p arameter t amb ( c) unit test conditions - 40 to + 85 - 40 to + 125 v cc (v) other min. typ . (1) max. min. max. v ih high level input voltage 1.5 1.2 - 1.5 - v 2.0 3.15 2.4 - 3.15 - 4.5 4.2 3.2 - 4.2 - 6.0 v il low level input voltage - 0.8 0.5 - 0.5 v 2.0 - 2.1 1.35 - 1.35 4.5 - 2.8 1.8 - 1.8 6.0 v oh high level output voltage; all outputs 1.9 2.0 - 1.9 - v 2.0 v i = v ih or v il , - i o = 20 m a 4.4 4.5 - 4.4 - 4.5 5.9 6.0 - 5.9 - 6.0 v oh high level output voltage; bus driver outputs 3.84 4.32 - 3.7 - v 4.5 v i = v ih or v il , - i o = 6.0 ma 5.34 5.81 - 5.2 - 6.0 v i = v ih or v il , - i o = 7.8 ma v ol low level output voltage; all outputs - 0 0.1 - 0.1 v 2.0 v i = v ih or v il , i o = 20 m a - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 6.0 v ol low level output voltage; bus driver outputs - 0.15 0.33 - 0.4 v 4.5 v i = v ih or v il , i o = 6.0 ma - 0.16 0.33 - 0.4 6.0 v i = v ih or v il , i o = 7.8 ma i i input leakage current - - 1.0 - 1.0 m a 6.0 v i = v cc or gnd i oz 3-state output off-state current - - 5 - 10 m a 6.0 v i = v ih or v il , v o = v cc or gnd i cc quiescent supply current - - 10 - 20 m a 6.0 v i = v cc or gnd, i o = 0
1997 nov 24 6 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 dc characteristics for the 74hct1g over recommended operating conditions. v oltage are referenced to gnd (ground = 0 v .) note 1. all typical values are measured at t amb = 25 c. symbol p arameter t amb ( c) unit test conditions - 40 to + 85 - 40 to +12 5 v cc (v) other min. typ . (1) max. min. max. v ih high level input voltage 2.0 1.6 - 2.0 - v 4.5 to 5.5 v il low level input voltage - 1.2 0.8 - 0.8 v 4.5 to 5.5 v oh high level output voltage; all outputs 4.4 4.5 - 4.4 - v 4.5 v i = v ih or v il , - i o = 20 m a v oh high level output voltage; bus driver outputs 3.84 4.32 - 3.7 - v 4.5 v i = v ih or v il , - i o = 6.0 ma v ol low level output voltage; all outputs - 0 0.1 - 0.1 v 4.5 v i = v ih or v il , i o = 20 m a v ol low level output voltage; bus driver outputs - 0.16 0.33 - 0.4 v 4.5 v i = v ih or v il , i o = 6.0 ma i i input leakage current - - 1.0 - 1.0 m a 5.5 v i = v cc or gnd i oz 3-state output off-state current - - 5 - 10 m a 5.5 v i = v ih or v il , v o = v cc or gnd i cc quiescent supply current - - 10 - 20 m a 5.5 v i = v cc or gnd, i o = 0 d i cc additional supply current per input - - 500 - 850 m a 4.5 to 5.5 v i = v cc - 2.1, i o = 0
1997 nov 24 7 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 ac characteristics for 74hc1g126 gnd = 0 v ; t r = t f 6.0 ns; cl = 50 pf note 1. all typical values are measured at t amb = 25 c. ac characteristics for 74hct1g126 gnd = 0 v ; t r = t f 6.0 ns; cl = 50 pf note 1. all typical values are measured at t amb = 25 c. symbol p arameter t amb ( c) unit test conditions - 40 to + 85 - 40 to + 125 v cc (v) w a veforms min. typ . (1) max. min. max. t phl /t plh propagation delay ina to outy - 24 125 - 150 ns 2.0 see fig.5 and fig.7 - 10 25 - 30 4.5 - 9 21 - 26 6.0 t pzh /t pzl 3-state output enable time oe to outy - 24 155 - 190 ns 2.0 see fig.6 and fig.7 - 10 31 - 38 4.5 - 8 26 - 32 6.0 t phz /t plz 3-state output disable time oe to outy - 16 155 - 190 ns 2.0 see fig.6 and fig.7 - 12 31 - 38 4.5 - 1 1 26 - 32 6.0 symbol p arameter t amb ( c) unit test conditions - 40 to + 85 - 40 to +12 5 v cc (v) w a veforms min. typ . (1) max. min. max. t phl /t plh propagation delay ina to outy - 1 1 30 - 36 ns 4.5 see fig.5 and fig.7 t pzh /t pzl 3-state output enable time oe to outy - 10 35 - 42 ns 4.5 see fig.6 and fig.7 t phz /t plz 3-state output disable time oe to outy - 12 31 - 38 ns 4.5 see fig.6 and fig.7
1997 nov 24 8 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 ac w a veforms fig.5 the input (ina) to output (outy) propagation delays. (1) hc1g v m = 50 %; v i = gnd to v cc hct1g v m = 1.3 v; v i = gnd to 3.0 v v m (1) ina inp ut ou ty ou tp ut v m (1) t pl h t ph l gn d v i fig.6 the 3-state enable and disable times. (1) hc1g v m = 50 %; v i = gnd to v cc hct1g v m = 1.3 v; v i = gnd to 3.0 v ou tp ut di sabl ed ou tp ut en ab le d ou tp ut en ab le d t ph z t pz h t pz l t plz 10% 90% v m (1 ) v m (1 ) v m (1 ) oe input v i gnd v cc gnd output high-to-off off-to-high output low-to-off off-to-low fig.7 load circuitry for switching times. s 1 te st t plh /t phl t plz /t pzl t phz /t pzh s 1 op en v cc gnd r l = 1 k w v cc op en pulse generat or d.u. t. v o v cc v i r t c l 50 pf definitions for test circuit ; c l = load capacitance including jig and probe capacitance (see ac characteristics for values). r l = load resistance.(see ac characteristics for values). r t = t ermination resistance should be equal to the output impedance zo of the pulse generator .
1997 nov 24 9 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 p ackage outlines
1997 nov 24 10 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our aic package databooko (order code 9398 652 90011). reow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. w ave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 nov 24 11 philips semiconductors product speci?cation bus buf fer/line driver; 3-state 74hc1g126 74hct1g126 definitions life support applica tions these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later . product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may af fect device reliability . application information where application information is given, it is advisory and does not form part of the speci?cation.
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