? by semikron b 5 C 23 1) t case = 25 c, unless otherwise specified 2) i f = C i d , v r = 100 v, Cdi f /dt = 100 a/ m s 3) skm 181 a 3 (with standard recovery body drain diode) can replace old skm 181 f (with fast recovery body drain diode) only in dc-choppers and resonant inverters which do not use the fast recovery feature i. e. f sw > f resonant, but not for f sw < f r and not for pwm-inverters. in doubt please ask semikron. absolute maximum ratings values symbol conditions 1) units v ds v dgr i d i dm v gs p d t j , (t stg ) v isol humidity climate r ge = 20 k w ac, 1 min. din 40 040 din iec 68 t.1 800 800 36 144 20 700 C40 ... +150 (125) 2 500 class f 40/125/56 v v a a v w c v inverse diode i f = Ci d i fm = Ci dm 36 144 a a characteristics symbol conditions 1) min. typ. max. units v (br)dss v gs(th) i dss i gss r ds(on) g fs v gs = 0, i d = 0,25 ma v gs = v ds , i d = 1 ma v gs = 0 t j = 25 c v ds = 800 v t j = 125 c v gs = 20 v, v ds = 0 v gs = 10 v, i d = 23 a v ds = 10 v, i d = 23 a 800 2,1 C C C C 16 C 3,0 50 300 10 170 33 C 4,0 100 1000 100 210 C v v m a m a na m w s c chc c iss c oss c rss l ds v gs = 0 v ds = 25 v f = 1 mhz C C C C C C 10 1,2 0,6 C 160 14 1,7 0,8 20 pf nf nf nf nh t d(on) t r t d(off) t f v dd = 400 v i d = 23 a v gs = 10 v r g = 4,7 w (skm 181a3r: 3,3 w) C C C C 60 30 350 70 C C C C ns ns ns ns inverse diode 8) v sd t rr q rr i f = 72 a, v gs = 0 v t j = 25 c 2) t j = 150 c 2) t j = 25 c 2) t j = 150 c 2) C C C C C 0,9 1200 C 42 1,2 C C C C v ns ns m c m c thermal characteristics r thjc r thch m 1 , surface 10 m m C C C C 0,18 0,05 c/w c/w mechanical data m 1 m 2 a w to heatsink, si units to heatsink, us units for terminals, si units for terminals, us units 4 35 2,5 22 C C C C C C C C 5 44 3,5 24 5x9,81 130 nm lb.in. nm lb.in. m/s 2 g case ? b 5 C 25 d15 semitrans ? m power mosfet modules skm 181 a3 3) skm 181 a3r *) features ? n channel, enhancement mode ? short internal connections avoid oscillations ? dcb-ceramic isolated copper baseplate ? all electrical connections on top for easy busbaring ? large clearance (10 mm) and creepage distances (13 mm) ? ul recognized, file no. e63 532 typical applications ? switched mode power supplies ? dc servo and robot drives ? dc choppers ? resonant and welding inverters ? ac motor drives ? laser power supplies ? ups equipment ? plasma cutting ? not suitable for linear amplification *) skm 181 a3r has built-in gate resistor chips (r) r ginternal = 1,3 w, preferred typed for paralle- ling and for lower switching fre- quencies this is an electrostatic dischar- ge sensitive device (esds). please observe the international standard iec 747-1, chapter ix. semitrans m1 skm 181 a3 skm 181 a3r *) 0898
? by semikron b 5 C 24 m181a3r0.xls-6 0 10 20 30 40 050100150 t case c i d a v gs >=10v m181a3r1.xls-5 0 0,1 0,2 0,3 0,4 0,5 0,6 0 20406080100120140 t j c r ds(on) w i d =23a v gs =10v typ. 98% m181a3r0.xls-4 0 10 20 30 0246 v gs v i d a m181a3r.xls -2 1 10 100 1000 10 100 1000 v ds v i d a t p =23s 100 s 1ms 10m s 100m s t case =25c t j =150c non-repetitive dc m181a3r0.xls-1 0 250 500 750 050100150 t case c p d w fig. 3 output characteristic fig. 4 transfer characteristic fig. 1 rated power dissipation vs. temperature fig. 2 maximum safe operating area fig. 5 on-resistance vs. temperature fig. 6 rated current vs. temperature 0898
? by semikron b 5 C 25 m181a3r0.xls-14 0 1 2 3 4 5 -50 0 50 100 150 t j c v gs(th) v 98% typ. 2% v ds =v gs i d =1ma m181a3r1.xls-11 0,1 1 10 100 1000 0123 v sd v i f a t j =25c typ. t j =150c typ. t j =25c (98%) t j =150c (98%) t p =80s m181a3r0.xls-7 700 750 800 850 900 -50 0 50 100 150 t j c v (br)dss v m181a3r0.xls-8 0 200 400 600 800 1000 0 1020304050 -di/dt a/ ns v ds v fig. 9 typ. capacitances vs. drain-source voltage fig. 10 gate charge characteristic fig. 7 breakdown voltage vs. temperature fig. 8 drain-source voltage derating fig. 11 diode forward characteristic fig. 14 gate-source threshold voltage 0898
? by semikron b 5 C 26 0898 m181a3r2.xls-52 0,0001 0,001 0,01 0,1 1 1e-06 1e-05 1e-04 0,001 0,01 0,1 1 10 t p s r thjcp c/w d=1 0,5 0,2 0,1 0,05 0,02 0,01 single pulse t p t d=t p /t c =t p *f m181a3r2.xls-51 0 0,05 0,1 0,15 0,2 0,25 0,0001 0,001 0,01 0,1 1 10 100 z thjh z thjc t p s z th c/w fig. 51 transient thermal impedance fig. 52 thermal impedance under pulse conditions semitrans m 1 case d 15 skm 181a3 skm 181 a3r dimensions in mm
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